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Электронный компонент: ARF2012

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FAST RECOVERY DIODE
ARF2012
Repetitive voltage up to
2600
V
Mean forward current
1525
A
Surge current
16
kA
FINAL SPECIFICATION
apr 97 - ISSUE : 04
Symbol
Characteristic
Conditions
Tj
[C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
150
2600
V
V
RSM
Non-repetitive peak reverse voltage
150
2700
V
I
RRM
Repetitive peak reverse current
V=VRRM
150
50
mA
CONDUCTING
I
F (AV)
Mean forward current
180 sin ,50 Hz, Th=55C, double side cooled
1525
A
I
F (AV)
Mean forward current
180 square,50 Hz,Th=55C,double side cooled
1545
A
I
FSM
Surge forward current
Sine wave, 10 ms
150
16
kA
I t
I t
reapplied reverse voltage up to 50% VRSM
1280 x1E3
As
V
FM
Forward voltage
Forward current =3400 A
25
2.5
V
V
F(TO)
Threshold voltage
150
1.03
V
r
F
Forward slope resistance
150
0.362
mohm
SWITCHING
t rr
Reverse recovery time
I F = 1000 A
4.6
s
Q rr
Reverse recovery charge
di/dt=
100 A/s
150
800
C
I rr
Peak reverse recovery current
VR =
100 V
345
A
s
Softness (s-factor), min
0.4
V
FR
Peak forward recovery
di/dt=
400 A/s
150
13
V
MOUNTING
R
th(j-h)
Thermal impedance
Junction to heatsink, double side cooled
26
C/kW
T
j
Operating junction temperature
-30 / 150
C
F
Mounting force
18.0 / 20.0
kN
Mass
500
g
ORDERING INFORMATION : ARF2012 S 26
standard specification
VRRM/100
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
ARF2012 FAST RECOVERY DIODE
FINAL SPECIFICATION apr 97 - ISSUE : 04
DISSIPATION CHARACTERISTICS
SQUARE WAVE
DC
SINE WAVE
DC
DC
180
120
90
60
30
0
500
1000
1500
2000
2500
3000
3500
4000
0
500
1000
1500
2000
2500
Mean Forward Current [A]
Power Dissipation [
W
]
ANSALDO
180
120
90
60
30
0
500
1000
1500
2000
2500
3000
3500
4000
0
500
1000
1500
2000
2500
Mean Forward Current [A]
Power Dissipation [
W
]
ARF2012 FAST RECOVERY DIODE
FINAL SPECIFICATION apr 97 - ISSUE : 04
SWITCHING CHARACTERISTICS
ANSALDO
REVERSE RECOVERY CHARGE
Tj = 150 C
0
200
400
600
800
1000
1200
1400
1600
1800
0
100
200
300
400
di/dt [A/s]
Qrr [C]
250 A
500 A
1000 A
REVERSE RECOVERY CURRENT
Tj = 150 C
0
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
0
100
200
300
400
di/dt [A/s]
Irr [A]
250 A
500 A
1000 A
FORWARD RECOVERY VOLTAGE
0
5
10
15
20
25
0
200
400
600
800
1000
1200
di/dt [A/s]
VFR [V]
Tj = 150 C
Tj = 25 C
ta = Irr / (di/dt) tb = trr - ta
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr (Qrr - Irr ta / 2 )
di/dt
Irr
I
F
ta
tb
Vr
I
F
V
FR
V
F
ARF2012 FAST RECOVERY DIODE
FINAL SPECIFICATION apr 97 - ISSUE : 04
Distributed by
FORWARD CHARACTERISTIC
Tj = 150 C
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0.6
1.1
1.6
2.1
2.6
Forward Voltage [V]
Forward Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0.001
0.01
0.1
1
10
100
t[s]
Zth j-h [C/kW]
SURGE CHARACTERISTIC
Tj = 150 C
0
2
4
6
8
10
12
14
16
1
10
100
n cycles
ITSM [kA]
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 m.
In the interest of product improvement ANSALDO reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
ANSALDO