FAST RECOVERY DIODE
ARF673
FOR IGBT,IEGT,GCT APPLICATIONS
Repetitive voltage up to
4500
V
SNUBBERLESS OPERATION
Mean forward current
990
A
LOW LOSSES SOFT RECOVERY
Surge current
15
kA
TARGET SPECIFICATION
mar 03 - ISSUE : 2
Symbol
Characteristic
Conditions
Tj
[C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
125
4500
V
V
RSM
Non-repetitive peak reverse voltage
125
4600
V
I
RRM
Repetitive peak reverse current
V=VRRM
125
80
mA
V
DC LINK
Permanent DC voltage
125
2500
V
CONDUCTING
I
F (AV)
Mean forward current
180 sin ,50 Hz, Th=55C, double side cooled
990
A
I
F (AV)
Mean forward current
180 square,50 Hz,Th=55C,double side cooled
1030
A
I
FSM
Surge forward current
Sine wave, 10 ms
125
15
kA
I t
I t
reapplied reverse voltage up to 50% VRSM
1125 x1E3
As
V
FM
Forward voltage
Forward current = =2500 A
125
3.82
V
V
F(TO)
Threshold voltage
125
1.70
V
r
F
Forward slope resistance
125
0.850
mohm
SWITCHING
t rr
Reverse recovery time
I F = 2100 A
s
Q rr
Reverse recovery charge
di/dt= 1100 A/s
2300
C
I rr
Peak reverse recovery current
VR = 1800 V
125
1300
A
s
Softness (s-factor), min
1
E
OFF
Turn off energy dissipation
6
J
V
FR
Peak forward recovery
di/dt=
400 A/s
125
38
V
MOUNTING
R
th(j-h)
Thermal impedance
Junction to heatsink, double side cooled
18
C/kW
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
6
C/kW
T
j
Operating junction temperature
-30 / 125
C
F
Mounting force
22.0 / 24.5
kN
Mass
300
g
ORDERING INFORMATION : ARF673 S 45
standard specification
VRRM/100
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. +39 010 6556234 - Fax +39 010 6557519
Sales Office:
Tel. +39 010 6556775 - Fax +39 010 6442510
ARF673 FAST RECOVERY DIODE
TARGET SPECIFICATION mar 03 - ISSUE : 2
Distributed by
FORWARD CHARACTERISTIC
Tj = 125 C
0
500
1000
1500
2000
2500
3000
3500
0.6
1.6
2.6
3.6
4.6
Forward Voltage [V]
Forward Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
0.001
0.01
0.1
1
10
100
t[s]
Zth j-h [C/kW]
SURGE CHARACTERISTIC
Tj = 125 C
0
2
4
6
8
10
12
14
16
1
10
100
n cycles
ITSM [kA]
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and
roughness < 2 m.
In the interest of product improvement ANSALDO reserves the right to change any
data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
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