FAST RECOVERY DIODE
ARF674
Repetitive voltage up to
4500
V
Mean forward current
945
A
Surge current
15
kA
FINAL SPECIFICATION
feb 97 - ISSUE : 03
Symbol
Characteristic
Conditions
Tj
[C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
125
4500
V
V
RSM
Non-repetitive peak reverse voltage
125
4600
V
I
RRM
Repetitive peak reverse current
V=VRRM
125
80
mA
CONDUCTING
I
F (AV)
Mean forward current
180 sin ,50 Hz, Th=55C, double side cooled
945
A
I
F (AV)
Mean forward current
180 square,50 Hz,Th=55C,double side cooled
940
A
I
FSM
Surge forward current
Sine wave, 10 ms
125
15
kA
I t
I t
reapplied reverse voltage up to 50% VRSM
1125 x1E3
As
V
FM
Forward voltage
Forward current = 1570 A
25
3
V
V
F(TO)
Threshold voltage
125
1.90
V
r
F
Forward slope resistance
125
0.700
mohm
SWITCHING
t rr
Reverse recovery time
I F =
500 A
8
s
Q rr
Reverse recovery charge
di/dt=
30 A/s
125
600
C
I rr
Peak reverse recovery current
VR =
100 V
150
A
s
Softness (s-factor), min
0.4
V
FR
Peak forward recovery
di/dt=
400 A/s
42
V
MOUNTING
R
th(j-h)
Thermal impedance
Junction to heatsink, double side cooled
21
C/kW
T
j
Operating junction temperature
-30 / 125
C
F
Mounting force
22.0 / 24.5
kN
Mass
520
g
ORDERING INFORMATION : ARF674 S 45
standard specification
VRRM/100
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
ARF674 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 97 - ISSUE : 03
DISSIPATION CHARACTERISTICS
SQUARE WAVE
DC
SINE WAVE
DC
DC
180
120
90
60
30
0
500
1000
1500
2000
2500
3000
3500
0
200
400
600
800
1000
1200
1400
Mean Forward Current [A]
Power Dissipation [W]
180
120
90
60
30
0
500
1000
1500
2000
2500
3000
3500
0
200
400
600
800
1000
1200
1400
Mean Forward Current [A]
Power Dissipation [W]
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
ARF674 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 97 - ISSUE : 03
SWITCHING CHARACTERISTICS
25% di Irr
REVERSE RECOVERY CHARGE
Tj = 125 C
0
500
1000
1500
2000
2500
3000
3500
0
100
200
300
400
di/dt [A/s]
Qrr [C]
250 A
500 A
1000 A
REVERSE RECOVERY CURRENT
Tj = 125 C
0
200
400
600
800
1000
1200
0
100
200
300
400
di/dt [A/s]
Irr [A]
250 A
500 A
1000 A
FORWARD RECOVERY VOLTAGE
0
10
20
30
40
50
60
70
80
0
200
400
600
800
1000
1200
di/dt [A/s]
VFR [V]
Tj = 125 C
Tj = 25 C
I
F
V
FR
V
F
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
ta
ta = Irr / (di/dt) tb = trr - ta
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr (Qrr - Irr ta / 2 )
Irr
Vr
tb
I
F
d i/d t
ARF674 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 97 - ISSUE : 03
Distributed by
FORWARD CHARACTERISTIC
Tj = 125 C
0
500
1000
1500
2000
2500
3000
1
1.5
2
2.5
3
3.5
4
Forward Voltage [V]
Forward Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0.0
5.0
10.0
15.0
20.0
25.0
0.001
0.01
0.1
1
10
100
t[s]
Zth j-h [C/kW]
SURGE CHARACTERISTIC
Tj = 125 C
0
2
4
6
8
10
12
14
16
1
10
100
n cycles
ITSM [kA]
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and
roughness < 2 m.
In the interest of product improvement POSEICO SPA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background)
and
characteristics
is
reported.
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
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