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Электронный компонент: AY08A4-12

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16-Pin Multiple
Circuit Triac
0.8 Amperes/400-700 Volts
AY08A3-**
AY08A4-**
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing
Description:
A triac is a solid state silicon AC
switch which may be gate
triggered from an off-state to an
on-state for either polarity of
applied voltage.
Features:
Planar Passivation
Surface Mount Type
Multiple Circuits in
one Package
Applications:
Electric Fan
Air Cleaner
Small Motor Control
Ordering Information:
Example: Select the complete
part number from the table
below -i.e. AY08A4-14 is a
0.8 Ampere, 4 Circuit, 700V,
16-Pin Multiple Circuit Triac.
Number
Voltage
Type
of Circuits
(x 50)
AY08A
3
-8
4
-12
-14
Dimension
Inches
Millimeters
A
1.8 Max.
4.5 Max.
B
0.75
0.01
19.0
0.2
C
0.25
0.01
6.3
0.15
D
0.01
0.27 +0.07/-0.05
E
0.3
7.62
F
0.12 Min.
3.0 Min.
Dimension
Inches
Millimeters
G
0.1
2.54
H
0.06 +0.01/-0 1.5 +0.3/-0.1
J
0.02
0.5
0.1
K
0.04 +0.01/-0 1.0 +0.3/-0.1
L
0.02 Min.
0.51 Min.
M
0.13
3.3
A
8
1
9
16
SEATING PLANE
N
D
E
B
C
L
M
K
J
H
G
F
16
1
8
9
T
2
T
2
T
2
T
2
T
2
T
2
T
2
T
2
T
1
G
T
1
G
T
1
G
T
1
G
AY08A3-**: No chip
2
AY08A3-**
AY08A4-**
16-Pin Multiple Circuit Triac
0.8 Amperes/400-700 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings (for One Chip),
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
AY08A*-08
AY08A*-12
AY08A*-14
Units
Repetitive Peak Off-state Voltage, Gate Open
V
DRM
400
600
700
Volts
Non-Repetitive Peak Off-state Voltage, Gate Open
V
DSM
500
720
840
Volts
On-state Current, T
c
= 86
C
I
T(RMS)
0.8
0.8
0.8
Amperes
Non-repetitive Peak Surge, One Cycle (60Hz)
I
TSM
8
8
8
Amperes
I
2
t for Fusing, t = 8.3 msec
I
2
t
0.26
0.26
0.26
A
2
sec
Peak Gate Power Dissipation, 20 msec
P
GM
1
1
1
Watts
Average Gate Power Dissipation
P
G(avg)
0.1
0.1
0.1
Watts
Peak Gate Current
I
GM
0.8
0.8
0.8
Amperes
Peak Gate Voltage
V
GM
6
6
6
Volts
Storage Temperature
T
stg
-40 to 125
-40 to 125
-40 to 125
C
Operating Temperature
T
j
-40 to 125
-40 to 125
-40 to 125
C
Electrical and Thermal Characteristics (for One Chip),
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Repetitive Off-state Current, Peak
I
DRM
V
DRM
applied, T
j
= 125
C
1.0
mA
Peak On-state Voltage
V
TM
T
c
= 25
C, I
TM
= 1.2A
2.0
Volts
Thermal Resistance
Junction to Ambient
R
th(j-a)
120
C/Watt
Gate -- Parameters
Gate Current to Trigger II
I
RGT
I
T
j
= 25
C, V
D
= 6V
5.0
mA
Gate Current to Trigger III
I
RGT
III
R
L
= 6 , R
G
= 330
5.0
mA
Gate Voltage to Trigger II
V
RGT
I
T
j
= 25
C, V
D
= 6V
2.0
Volts
Gate Voltage to Trigger III
V
RGT
III
R
L
= 6 , R
G
= 330
2.0
Volts
Non-triggering Gate Voltage
V
GD
T
j
= 125
C, V
D
= 1/2 V
DRM
0.1
Volts
Critical Rate-of-Rise of Commutating
(dv/dt)
c
T
j
= 125
C
0.5
V/
s
Off-state Voltage
(dv/dt)
c
= -0.4A/ms, V
D
= 400V