1
Trench Gate Design
Dual IGBTMODTM
150 Amperes/600 Volts
CM150DUS-12F
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Q (2 PLACES)
CM
A
B
S
T
T
U
U
W
V
D
R
K
K
C2E1
E2
C1
#110 TAB x H THICK
(4 PLACES)
X
Y
M
N
E
F
G
F
J
E2
G2
G1
E1
P - NUTS x Z DEEP (3 PLACES)
TC MEASURED
POINT
C
L
C2E1
RTC
RTC
E2
E1
G1
C1
E2
G2
1
Description:
Powerex IGBTMODTM Modules
are designed for use in high
frequency applications; 30 kHz
for hard switching applications
and 60 to 70 kHz for soft switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
Low V
CE(sat)
Low E
SW(off)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
Power Supplies
Induction Heating
Welders
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM1
50DUS-12F is
a 600V (V
CES
), 1
50 Ampere Dual
IGBTMODTM Power Module.
Current Rating V
CES
Type Amperes Volts (x 50)
CM 150 12
Dimensions Inches Millimeters
A 3.70 94.0
B 1.89 48.0
C 1.18 +0.04/-0.02 30.0 +1.0/-0.5
D 3.150.01 80.00.25
E 0.43 11.0
F 0.16 4.0
G 0.71 18.0
H 0.02 0.5
J 0.53 13.5
K 0.91 23.0
L 0.83 21.2
M 0.67 17.0
Dimensions Inches Millimeters
N 0.28 7.0
P M6.5 M6.5
Q 0.26 Dia. 6.5 Dia.
R 0.02 4.0
S 0.30 7.5
T 0.63 16.0
U 0.10 2.5
V 1.0 25.0
W 0.94 24.0
X 0.51 13.0
Y 0.47 12.0
Z 0.47 12.0
2
CM150DUS-12F
Trench Gate Design Dual IGBTMODTM
150 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
3
CM150DUS-12F
Trench Gate Design Dual IGBTMODTM
150 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
2
Absolute Maximum Ratings,
T
j
= 25 C unless otherwise specified
Ratings Symbol CM150DUS-12F Units
Junction Temperature T
j
-40 to 150 C
Storage Temperature T
stg
-40 to 125 C
Collector-Emitter Voltage (G-E SHORT) V
CES
600 Volts
Gate-Emitter Voltage (C-E SHORT) V
GES
20 Volts
Collector Current (T
c
= 25C) I
C
150 Amperes
Peak Collector Current I
CM
300* Amperes
Emitter Current** (T
c
= 25C) I
E
150 Amperes
Peak Emitter Current** I
EM
300* Amperes
Maximum Collector Dissipation (T
c
= 25C, T
j
150C) P
c
520 Watts
Mounting Torque, M5 Main Terminal 31 in-lb
Mounting Torque, M6 Mounting 40 in-lb
Weight 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
iso
2500 Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics,
T
j
= 25 C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V 1 mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V 20 A
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 15mA, V
CE
= 10V 5 6 7 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 150A, V
GE
= 15V, T
j
= 25C 1.7 2.0 2.7 Volts
I
C
= 150A, V
GE
= 15V, T
j
= 125C 1.95 Volts
Total Gate Charge Q
G
V
CC
= 300V, I
C
= 150A, V
GE
= 15V 930 nC
Emitter-Collector Voltage** V
EC
I
E
= 150A, V
GE
= 0V 2.6 Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics,
T
j
= 25 C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
41 nf
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V 2.7 nf
Reverse Transfer Capacitance C
res
1.5 nf
Resistive Turn-on Delay Time t
d(on)
V
CC
= 300V, I
C
= 150A, 120 ns
Load Rise Time t
r
V
GE1
= V
GE2
= 15V, 100 ns
Switch Turn-off Delay Time t
d(off)
R
G
= 4.2, Inductive 350 ns
Times Fall Time t
f
Load Switching Operation 150 ns
Diode Reverse Recovery Time** t
rr
I
E
= 150A 150 ns
Diode Reverse Recovery Charge** Q
rr
2.8 C
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
CM150DUS-12F
Trench Gate Design Dual IGBTMODTM
150 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
3
CM150DUS-12F
Trench Gate Design Dual IGBTMODTM
150 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Thermal and Mechanical Characteristics,
T
j
= 25 C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
th(j-c)
Q Per IGBT 1/2 Module, T
c
Reference 0.24 C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R
th(j-c)
D Per FWDi 1/2 Module, T
c
Reference 0.47 C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R
th(j-c')
Q Per IGBT 1/2 Module, 0.19** C/W
T
c
Reference Point Under Chip
Contact Thermal Resistance R
th(c-f)
Per Module, Thermal Grease Applied 0.07 C/W
External Gate Resistance R
G
4.2 42
** If you use this value, Rth(f-a) should be measured just under the chips.
COLLECTOR-CURRENT, I
C
, (AMPERES)
SWITCHING LOSS,
E
SW
, (mJ/PULSE)
SWITCHING LOSS VS. COLLECTOR CURRENT
(TYPICAL)
10
1
10
2
10
3
10
0
10
-1
10
1
E
SW(on)
E
SW(off)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT,
I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
1
2
3
4
150
50
0
V
GE
= 20V
13
8
8.5
7.5
7
100
250
200
300
9
15
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE,
V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3.0
0
50
100
150
200
250
2.5
2.0
1.5
1.0
0.5
0
300
V
GE
= 15V
T
j
= 25
C
T
j
= 125
C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE,
C
ies
,
C
oes
,
C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
2
10
2
10
1
10
-1
10
0
V
GE
= 0V
f = 1MHz
C
oes
C
res
C
ies
10
0
10
1
0.5
0
1.5
1.0
2.0
2.5
3.0
10
0
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
EMITTER CURRENT,
I
E
, (AMPERES)
T
j
= 25
C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE,
V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
6
8
10
14
12
18
16
20
4
3
2
1
0
T
j
= 25
C
I
C
= 60A
I
C
= 300A
I
C
= 150A
V
CC
= 300V
V
GE
=
15V
R
G
= 4.2
T
j
= 125
C
HALF-BRIDGE
SWITCHING
T
j
= 25
o
C
9.5
10
11
4
CM150DUS-12F
Trench Gate Design Dual IGBTMODTM
150 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE,
Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
( IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.24
C/W
Z
th
=
R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE,
Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.47
C/W
Z
th
=
R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
t
rr
I
rr
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
2
10
2
10
1
10
0
t
d(off)
t
d(on)
t
r
V
CC
= 300V
V
GE
=
15V
R
G
= 4.2
T
j
= 125
C
t
f
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME,
t
r
r
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
2
10
1
10
2
10
3
10
1
10
0
10
2
10
1
10
0
REVERSE RECOVERY CURRENT,
I
r
r
, (AMPERES)
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE,
V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
1400
1000 1200
600 800
16
12
8
4
0
200 400
V
CC
= 300V
V
CC
= 200V
I
C
= 150A
V
CC
= 300V
V
GE
=
15V
R
G
= 4.2
T
j
= 125
C
t
rr
I
rr
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