Feb. 2000
MITSUBISHI HVIGBT MODULES
CM400DY-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
q
I
C ...................................................................
400A
q
V
CES .......................................................
2500V
q
Insulated Type
q
2-elements in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
CM400DY-50H
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
G1
C2
G2
C2
E2
E2
CIRCUIT DIAGRAM
G1
E1
E1
C1
114
57
0.25
57
0.25
130
E1
C2
E1
E2
C1
C2
E2(C1)
CM
24.5
40
20
124
0.25
140
7.2
48.8
53.6
36.3
4 - M8 NUTS
6 -
7 MOUNTING HOLES
5 - M4 NUTS
G2
18
61.5
5
38
15
39.5
5.7
15
30
28
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Feb. 2000
MITSUBISHI HVIGBT MODULES
CM400DY-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
MAXIMUM RATINGS
(Tj = 25
C)
V
GE
= 0V
V
CE
= 0V
T
C
= 25
C
Pulse
(Note 1)
T
C
= 25
C
Pulse
(Note 1)
T
C
= 25
C, IGBT part
--
--
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
2500
20
400
800
400
800
3400
40 ~ +150
40 ~ +125
6000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
V
V
A
A
A
A
W
C
C
V
Nm
Nm
Nm
kg
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
Collector current
Emitter current
Symbol
Item
Conditions
Unit
Ratings
V
CES
V
GES
I
C
I
CM
I
E
(Note 2)
I
EM (Note 2)
P
C (Note 3)
T
j
T
stg
V
iso
--
--
V
V
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
C
T
j
= 125
C
V
CC
= 1250V, I
C
= 400A, V
GE
= 15V
V
CC
= 1250V, I
C
= 400A
V
GE1
= V
GE2
= 15V
R
G
= 7.5
Resistive load switching operation
I
E
= 400A, V
GE
= 0V
I
E
= 400A
die / dt = 800A /
s
Junction to case, IGBT part (Per 1/2 module)
Junction to case, FWDi part (Per 1/2 module)
Case to fin, conductive grease applied (Per 1/2 module)
I
C
= 40mA, V
CE
= 10V
I
C
= 400A, V
GE
= 15V (Note 4)
V
CE
= 10V
V
GE
= 0V
5
0.5
4.16
--
--
--
--
--
1.00
2.00
2.00
1.00
3.77
1.20
--
0.036
0.072
--
mA
A
nF
nF
nF
C
s
s
s
s
V
s
C
K/W
K/W
K/W
--
--
3.20
3.60
40
4.4
1.3
1.8
--
--
--
--
2.90
--
85
--
--
0.016
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
6.0
4.5
7.5
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Contact thermal resistance
Min
Typ
Max
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d (on)
t
r
t
d (off)
t
f
V
EC (Note 2)
t
rr
(Note 2)
Q
rr (Note 2)
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
ELECTRICAL CHARACTERISTICS
(Tj = 25
C)
Symbol
Parameter
Conditions
V
GE(th)
V
CE(sat)
Limits
Unit
Note 1. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
2. I
E
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (T
j
) should not increase beyond 150
C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Thermal resistance
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Feb. 2000
MITSUBISHI HVIGBT MODULES
CM400DY-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(
A
)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(
A
)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
COLLECTOR CURRENT I
C
(A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT I
E
(
A
)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
0
5
4
3
2
1
10
2
10
4
7
5
3
2
10
3
7
5
3
2
7
5
3
2
10
1
T
j
=25
C
800
400
200
0
10
0
2
4
6
8
600
T
j
=25
C
V
GE
=13V
V
GE
=12V
V
GE
=11V
V
GE
=10V
V
GE
=9V
V
GE
=8V
V
GE
=7V
V
GE
=14V
V
GE
=15V
V
GE
=20V
0
5
4
3
2
1
0
200
400
600
800
V
GE
=15V
T
j
= 25
C
T
j
= 125
C
800
400
200
0
600
20
0
4
8
12
16
V
CE
=10V
T
j
= 25
C
T
j
= 125
C
COLLECTOR-EMITTER SATURATION VOLTAGE V
CE(sat)
(V)
0
20
16
12
8
4
10
8
6
4
2
0
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T
j
= 25
C
I
C
= 400A
I
C
= 800A
I
C
= 160A
10
0
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
1
CAPACITANCE VS. V
CE
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(
nF
)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
C
ies
C
oes
C
res
V
GE
= 0V, T
j
= 25
C
C
ies,
C
oes
: f = 100kHz
C
res
: f = 1MHz
Feb. 2000
MITSUBISHI HVIGBT MODULES
CM400DY-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
4000
3000
0
1000
2000
7
5
3
2
7 10
2
10
1
7
2 3
5 7 10
3
2 3
5
5
3
2
10
0
5
7
5
3
2
7 10
2
10
1
7
2 3
5 7 10
3
2 3
5
5
5
3
2
10
0
5
t
d(off)
V
CC
= 1250V, V
GE
=
15V
R
G
= 7.5
, T
j
= 125
C
Inductive load
t
d(on)
t
r
t
f
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIMES
(
s
)
COLLECTOR CURRENT I
C
(A)
V
CC
= 1250V, T
j
= 125
C
Inductive load
V
GE
=
15V, R
G
= 7.5
t
rr
I
rr
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
REVERSE RECOVERY TIME t
rr
(
s
)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY CURRENT I
rr
(
A
)
7
5
3
2
10
1
7
5
3
2
10
2
10
1
10
3
10
2
10
3
10
2
10
1
10
0
7
5
3
2
10
1
7
5
3
2
10
0
10
1
7
5
3
2
2 3 5 7
2 3 5 7
2 3 5 7
Single Pulse
T
C
= 25
C
R
th(j c)
= 0.036
C/ W
(Per 1/2 module)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j c)
TIME (s)
10
2
10
3
10
2
10
1
10
0
7
5
3
2
10
1
7
5
3
2
10
0
10
1
7
5
3
2
2 3 5 7
2 3 5 7
2 3 5 7
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j c)
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
20
16
12
8
4
0
V
GE
GATE CHARGE
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(
V
)
GATE CHARGE Q
G
(nC)
V
CC
= 1250V
I
C
= 400A
Single Pulse
T
C
= 25
C
R
th(j c)
= 0.072
C/ W
(Per 1/2 module)
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