207
Single IGBTMODTM
H-Series Module
400 Amperes/1400 Volts
CM400HA-28H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
4.21
107.0
B
3.661
0.01
93.0
0.25
C
2.44
62.0
D
1.89
0.01
48.0
0.25
E
1.42+0.04/-0.02 36.0+1.0/-0.5
F
1.14
29.0
G
1.02+0.04/-0.2 25.8+1.0/-0.5
H
0.94
24.0
Dimensions
Inches
Millimeters
J
0.79
20.0
K
0.69
17.5
L
0.63
16.0
M
0.35
9.0
N
0.28
7.0
P
0.26 Dia.
Dia. 6.5
Q
M6 Metric
M6
R
M4 Metric
M4
Description:
Powerex IGBTMODTM Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
(135ns) Free-Wheel Diode
High Frequency Operation
(20-25kHz)
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM400HA-28H
is a 1400V (V
CES
), 400 Ampere
Single IGBTMODTM Power Module.
Type
Current Rating
V
CES
Amperes
Volts (x 50)
CM
400
28
G
E
N
E
C
E
G
M
A
B
K
F
J
H
J
D
C
L
Q - THD
(2 TYP.)
P - DIA.
(4 TYP.)
R - THD
(2 TYP.)
208
CM400HA-28H
Single IGBTMODTM H-Series Module
400 Amperes/1400 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM400HA-28H
Units
Junction Temperature
T
j
40 to 150
C
Storage Temperature
T
stg
40 to 125
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
1400
Volts
Gate-Emitter Voltage
V
GES
20
Volts
Collector Current
I
C
400
Amperes
Peak Collector Current
I
CM
800*
Amperes
Diode Forward Current
I
F
400
Amperes
Diode Forward Surge Current
I
FM
800*
Amperes
Power Dissipation
P
d
2800
Watts
Max. Mounting Torque M6 Terminal Screws
26
in-lb
Max. Mounting Torque M6 Mounting Screws
26
in-lb
Module Weight (Typical)
400
Grams
V Isolation
V
RMS
2500
Volts
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
2.0
mA
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 40mA, V
CE
= 10V
5.0
6.5
8.0
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 400A, V
GE
= 15V
3.1
4.2**
Volts
I
C
= 400A, V
GE
= 15V, T
j
= 150
C
2.95
Volts
Total Gate Charge
Q
G
V
CC
= 600V, I
C
= 400A, V
GE
= 15V
2040
nC
Diode Forward Voltage
V
FM
I
E
= 400A, V
GE
= 0V
3.8
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
80
nF
Output Capacitance
C
oes
V
GE
= 0V, V
CE
= 10V, f = 1MHz
28
nF
Reverse Transfer Capacitance
C
res
16
nF
Resistive
Turn-on Delay Time
t
d(on)
300
ns
Load
Rise Time
t
r
V
CC
= 800V, I
C
= 400A,
500
ns
Switching
Turn-off Delay Time
t
d(off)
V
GE1
= V
GE2
= 15V, R
G
= 0.78
350
ns
Times
Fall Time
t
f
500
ns
Diode Reverse Recovery Time
t
rr
I
E
= 400A, di
E
/dt = 800A/
s
300
ns
Diode Reverse Recovery Charge
Q
rr
I
E
= 400A, di
E
/dt = 800A/
s
4.0
C
Thermal and Mechanical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Per IGBT
0.045
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
Per FWDi
0.09
C/W
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
0.040
C/W
209
CM400HA-28H
Single IGBTMODTM H-Series Module
400 Amperes/1400 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
rr
I
rr
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
di/dt = -800A/
sec
T
j
= 25C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25C
I
C
= 160A
I
C
= 800A
I
C
= 400A
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
f = 1MHz
10
1
C
ies
C
oes
C
res
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
640
480
320
160
0
800
V
CE
= 10V
T
j
= 25C
T
j
= 125C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
2
4
6
8
10
480
160
0
V
GE
= 20V
13
12
11
8
7
T
j
= 25
o
C
320
640
800
10
9
15
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
800
1600
2400
16
12
8
4
0
3200
I
C
= 400A
V
CC
= 800V
V
CC
= 600V
1.0
1.5
2.0
2.5
3.5
4.0
10
1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25C
3.0
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
160
320
480
800
4
3
2
1
0
V
GE
= 15V
T
j
= 25C
T
j
= 125C
640
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
r
t
f
V
CC
= 800V
V
GE
= 15V
R
G
= 0.78
T
j
= 125C
t
d(on)
t
d(off)
210
CM400HA-28H
Single IGBTMODTM H-Series Module
400 Amperes/1400 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.045
C/W
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.09C/W
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
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