Sep. 2000
CT60AM-18F
OUTLINE DRAWING
Dimensions in mm
TO-3PL
MITSUBISHI Nch IGBT
CT60AM-18F
INSULATED GATE BIPOLAR TRANSISTOR
APPLICATION
Microwave oven, Electromagnetic cooking devices, Rice-cookers
900
25
30
60
120
40
180
40 ~ +150
40 ~ +150
V
GE
= 0V
Collector-Emitter Voltage
Gate-Emitter Voltage
Peak Gate-Emitter Voltage
Collector Current
Collector Current (Pulse)
Emitter Current
Maximum Power Dissipation
Junction Temperature
Storage Temperature
V
V
V
A
A
A
W
C
C
V
CES
V
GES
V
GEM
I
C
I
CM
I
E
P
C
T
j
T
stg
Symbol
MAXIMUM RATINGS
(Tc = 25C)
Parameter
Conditions
Ratings
Unit
q
V
CES ...............................................................................
900V
q
I
C .........................................................................................
60A
q
Simple drive
q
Integrated Fast-recovery diode
q
Small tail loss
q
Low V
CE
Saturation Voltage
20MAX.
5
2
6
26
20.6MIN.
2
1
0.5
2.5
4.0
3.2
5.45 5.45
1
3
GATE
COLLECTOR
EMITTER
COLLECTOR
Sep. 2000
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
Etail
Itail
V
EC
t
rr
R
th(j-c)
R
th(j-c)
mA
A
V
V
pF
pF
pF
s
s
s
s
mJ/pls
A
V
s
C/W
C/w
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
4.0
2.1
4400
115
75
0.05
0.1
0.2
0.2
0.6
8
2.2
0.5
--
--
1.0
0.5
6.0
2.7
--
--
--
--
--
--
--
1.0
12
3.0
2.0
0.69
4.0
ELECTRICAL CHARACTERISTICS
(Tch = 25C)
Collector cutoff current
Gate leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on deray time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Tail loss
Tail current
Emitter-collector voltage
Diode reverse recovery time
Thermal resistance (IGBT)
Thermal resistance (Diode)
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
V
CE
= 900V, V
GE
= 0V
V
GE
= 20V, V
CE
= 0V
V
CE
= 10V, I
C
= 6mA
I
C
= 60A, V
CE
= 15V
V
CE
= 25V, V
GE
= 0V, f = 1MHz
V
CC
= 300V, I
C
= 60A, V
GE
= 15V, R
G
= 10
I
CP
= 60A, T
j
= 125C, dv/dt = 200V/
s
I
E
= 60A, V
GE
= 0V
I
E
= 60A, dis/dt = 20A/
s
Junction to case
Junction to case
MITSUBISHI Nch IGBT
CT60AM-18F
INSULATED GATE BIPOLAR TRANSISTOR
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