Feb.1999
900
30
3
9
30
55 ~ +150
55 ~ +150
2000
2
V
V
A
A
W
C
C
V
rms
g
V
DSS
V
GSS
I
D
I
DM
P
D
T
ch
T
stg
V
iso
--
V
DSS ................................................................................
900V
r
DS (ON) (MAX) ................................................................
4.0
I
D ............................................................................................
3A
V
iso ................................................................................
2000V
FS3KM-18A
OUTLINE DRAWING
Dimensions in mm
TO-220FN
MITSUBISHI Nch POWER MOSFET
FS3KM-18A
HIGH-SPEED SWITCHING USE
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
Parameter
Conditions
Symbol
Ratings
Unit
MAXIMUM RATINGS
(Tc = 25
C)
V
GS
= 0V
V
DS
= 0V
AC for 1minute, Terminal to case
Typical value
w
q
e
15 0.3
14 0.5
10 0.3
2.8 0.2
3.2 0.2
1.1 0.2
1.1 0.2
0.75 0.15
2.54 0.25
2.54 0.25
2.6 0.2
4.5 0.2
0.75 0.15
3 0.3
3.6 0.3
6.5 0.3
1 2 3
q
GATE
w
DRAIN
e
SOURCE
Feb.1999
V
V
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
C/W
900
30
--
--
2
--
--
2.1
--
--
--
--
--
--
--
--
--
--
--
--
--
3
3.08
4.62
3.5
770
77
13
15
15
90
25
1.0
--
--
--
10
1
4
4.00
6.00
--
--
--
--
--
--
--
--
1.5
4.17
I
D
= 1mA, V
GS
= 0V
I
GS
=
100
A, V
DS
= 0V
V
GS
=
25V, V
DS
= 0V
V
DS
= 900V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 1.5A, V
GS
= 10V
I
D
= 1.5A, V
GS
= 10V
I
D
= 1.5A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 200V, I
D
= 1.5A, V
GS
= 10V,
R
GEN
= R
GS
= 50
I
S
= 1.5A, V
GS
= 0V
Channel to case
MITSUBISHI Nch POWER MOSFET
FS3KM-18A
HIGH-SPEED SWITCHING USE
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
10
2
10
1
2
3
5
7
10
0
2
3
5
7
10
0
2
10
1
3 5 7
2
10
2
3 5 7
2
10
3
3 5 7
3
2
10
1
5
7
100
m
s
tw = 10
m
s
T
C
= 25C
Single Pulse
10ms
100ms
1ms
DC
0
2
4
6
8
10
0
10
20
30
40
50
P
D
= 30W
V
GS
= 20V
T
C
= 25C
Pulse Test
10V
5V
4V
0
10
20
30
40
50
0
200
50
100
150
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
V
GS
= 20V
@
T
C
= 25C
Pulse Test
10V
5V
4.5V
4V
P
D
= 30W
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
ELECTRICAL CHARACTERISTICS
(Tch = 25
C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
PERFORMANCE CURVES
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS3KM-18A
HIGH-SPEED SWITCHING USE
0
2
4
6
8
10
0
4
8
12
16
20
T
C
= 25C
V
DS
= 50V
Pulse Test
10
1
10
0
2
3
5 7
10
1
2
3
5 7
10
1
10
0
2
3
5
7
10
1
2
3
5
7
T
C
= 25C
75C
125C
V
DS
= 10V
Pulse Test
10
1
3
5
7
10
2
2
3
5
7
2
10
0
3 5 7
2
10
1
3 5 7
2
10
2
3 5 7
10
3
5
7
2
3
2
3
2
Ciss
Coss
Crss
Tch = 25C
f = 1MH
Z
V
GS
= 0V
10
1
10
0
2
3
5 7
10
1
2
3
5 7
10
1
10
2
2
3
5
7
2
3
10
3
5
7
t
d(off)
t
d(on)
t
r
Tch = 25C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50
t
f
0
10
20
30
40
50
0
4
8
12
16
20
I
D
= 6A
T
C
= 25C
Pulse Test
3A
1A
0
2
4
6
8
10
10
1
2
10
0
3 5 7
2
10
1
3 5 7
2
10
2
3 5 7
V
GS
= 10V
T
C
= 25C
Pulse Test
20V
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS3KM-18A
HIGH-SPEED SWITCHING USE
10
1
10
0
2
3
5
7
10
1
2
3
5
7
50
0
50
100
150
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
0
1.0
2.0
3.0
4.0
5.0
50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
0.4
0.6
0.8
1.0
1.2
1.4
50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
0
4
8
12
16
20
0
10
20
30
40
50
V
DS
= 250V
400V
600V
Tch = 25C
I
D
= 5A
10
2
10
1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
4
2 3 57
2 3 57
2 3 57
2 3 5710
0
2 3 5710
1
2 3 5710
2
10
3
10
2
10
1
Single Pulse
0.2
0.1
0.05
0.02
0.01
D = 1.0
0.5
P
DM
tw
D
=
T
tw
T
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(tC)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(
c
hc
)
(C/
W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(tC)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25C)
0
2
4
6
8
10
0
0.8
1.6
2.4
3.2
4.0
T
C
= 125C
75C
25C
V
GS
= 0V
Pulse Test
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