PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
4V DRIVE
V
DSS
............................................................... 30V
r
DS (ON) (MAX)
................................................ 0.13
I
D
.................................................................... 20A
Integrated Fast Recovery Diode (TYP.) ........... 50ns
V
iso ................................................................................
2000V
FX20KMJ-03
TO-220FN
V
V
A
A
A
A
A
W
C
C
V
g
30
20
20
80
20
20
80
20
55 ~ +150
55 ~ +150
2000
2.0
V
GS
= 0V
V
DS
= 0V
L = 10
H
AC for 1minute, Terminal to case
Typical value
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
V
iso
--
15 0.3
14 0.5
10 0.3
2.8 0.2
3.2 0.2
1.1 0.2
1.1 0.2
0.75 0.15
2.54 0.25
2.54 0.25
2.6 0.2
4.5 0.2
0.75 0.15
3 0.3
3.6 0.3
6.5 0.3
E
1
1
1
2
2
2
3
3
3
GATE
DRAIN
SOURCE
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
OUTLINE DRAWING
Dimensions in mm
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
Symbol
MAXIMUM RATINGS
(Tc = 25C)
Parameter
Conditions
Ratings
Unit
MITSUBISHI Pch POWER MOSFET
FX20KMJ-03
HIGH-SPEED SWITCHING USE
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
V
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
C/W
ns
30
--
--
1.3
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
1.8
0.11
0.21
1.1
5.8
1130
232
83
15
33
49
26
1.0
--
50
--
0.1
0.1
2.3
0.13
0.29
1.3
--
--
--
--
--
--
--
--
1.5
6.25
--
ELECTRICAL CHARACTERISTICS
(Tch = 25C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
PERFORMANCE CURVES
I
D
= 1mA, V
DS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= 30V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 10A, V
GS
= 10V
I
D
= 2A, V
GS
= 4V
I
D
= 10A, V
GS
= 10V
I
D
= 10A, V
DS
= 5V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
V
DD
= 15V, I
D
= 10A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 10A, V
GS
= 0V
Channel to case
I
S
= 10A, dis/dt = 50A/
s
0
8
16
24
32
40
0
200
50
100
150
0
4
8
12
16
20
0
1.0
2.0
3.0
4.0
5.0
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
10
0
2
3
5
7
10
1
2
2
3
5
7
10
2
2
3
5
7
2
10
0
3 57
2
10
1
3 57
2
10
2
3 57
2
tw = 10
s
T
C
= 25C
Pulse Set
100
s
10ms
1ms
DC
Tc = 25C
Pulse Test
6V
7V
8V
P
D
=
20W
V
GS
=
10V
4V
3V
5V
4V
3V
V
GS
= 10V
8V
6V
Tc = 25C
Pulse Test
5V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
MITSUBISHI Pch POWER MOSFET
FX20KMJ-03
HIGH-SPEED SWITCHING USE
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
0
1.0
2.0
3.0
4.0
5.0
0
2
4
6
8
10
I
D
= 20A
5A
10A
Tc = 25C
Pulse Test
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
10
0
3 57
2
10
1
3 57
2
2
10
2
3 57
2 3
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
0
57
2
10
1
3 57
10
3
7
2
3
5
2
3 5
10
2
3 57
2
10
0
3
5 7
2 3
5 7
10
1
2 3
10
1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
T
C
= 25C 75C
125C
V
DS
= 5V
Pulse Test
0
4
8
12
16
20
0
2
4
6
8
10
Tc = 25C
V
DS
= 10V
Pulse Test
Ciss
Coss
Crss
Tch = 25C
f = 1MH
Z
V
GS
= 0V
0
0.08
0.16
0.24
0.32
0.40
10
1
2
10
0
3 5 7
2
10
1
3 5 7
2
10
2
3 5 7
10V
Tc = 25C
Pulse Test
V
GS
= 4V
t
d(off)
t
d(on)
t
r
Tch = 25C
V
GS
= 10V
V
DD
= 15V
R
GEN
= R
GS
= 50
t
f
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
MITSUBISHI Pch POWER MOSFET
FX20KMJ-03
HIGH-SPEED SWITCHING USE
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
10
1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
4
2 3 5 7
2 3 5 7
2 3 5 7
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
10
3
10
2
10
1
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P
DM
D
=
T
tw
T
tw
0
2
4
6
8
10
0
4
8
12
16
20
V
DS
=
10V
20V
25V
Tch = 25C
I
D
= 20A
0
10
20
30
40
50
0
0.4
0.8
1.2
1.6
2.0
125C
75C
T
C
=
25C
V
GS
= 0V
Pulse Test
10
1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
50
0
50
100
150
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
0
0.8
1.6
2.4
3.2
4.0
50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
0.4
0.6
0.8
1.0
1.2
1.4
50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(tC)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(
c
hc
)
(C/
W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(tC)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25C)
MITSUBISHI Pch POWER MOSFET
FX20KMJ-03
HIGH-SPEED SWITCHING USE
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