PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Sep.1998
FY6BCH-02
OUTLINE DRAWING
Dimensions in mm
TSSOP8
MITSUBISHI Nch POWER MOSFET
FY6BCH-02
HIGH-SPEED SWITCHING USE
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
20
10
6
42
6
1.5
6.0
1.5
55 ~ +150
55 ~ +150
0.035
V
GS
= 0V
V
DS
= 0V
L = 10
H
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
V
A
A
A
A
A
W
C
C
g
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
--
Symbol
MAXIMUM RATINGS
(Tc = 25C)
Parameter
Conditions
Ratings
Unit
q
2.5V DRIVE
q
V
DSS ..................................................................................
20V
q
r
DS (ON) (MAX) .............................................................
30m
q
I
D ...........................................................................................
6A
3.0
0.275
0.65
1.1
6.4
4.4
DRAIN
SOURCE
GATE
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Sep.1998
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-a)
t
rr
MITSUBISHI Nch POWER MOSFET
FY6BCH-02
HIGH-SPEED SWITCHING USE
V
A
mA
V
m
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
C/W
ns
20
--
--
0.5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.9
25
32
0.15
13.0
800
280
200
20
55
90
100
--
--
50
--
0.1
0.1
1.3
30
40
0.18
--
--
--
--
--
--
--
--
1.10
83.3
--
ELECTRICAL CHARACTERISTICS
(Tch = 25C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
I
D
= 1mA, V
GS
= 0V
V
GS
= 10V, V
DS
= 0V
V
DS
= 20V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 6A, V
GS
= 4V
I
D
= 3A, V
GS
= 2.5V
I
D
= 6A, V
GS
= 4V
I
D
= 6A, V
DS
= 10V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
V
DD
= 10V, I
D
= 3A, V
GS
= 4V, R
GEN
= R
GS
= 50
I
S
= 1.5A, V
GS
= 0V
Channel to ambient
I
S
= 1.5A, dis/dt = 50A/
s
PERFORMANCE CURVES
0
0.4
0.8
1.2
1.6
2.0
0
200
50
100
150
10
1
10
0
2
3
5
7
10
1
2
3
5
7
2
3
5
2
10
0
3
5 7
2
10
1
3
5 7
2
10
2
3
5 7
5
7
2
100s
tw = 10s
100ms
1ms
10ms
DC
T
C
= 25C
Single Pulse
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
1.0
V
GS
= 5V
P
D
= 1.5W
T
C
= 25C
Pulse Test
4V
2V
1.5V
2.5V
3V
0
2
4
6
8
10
0
0.1
0.2
0.3
0.4
0.5
V
GS
= 5V
P
D
= 1.5W
T
C
= 25C
Pulse Test
4V
1.5V
2.5V
3V
2V
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Sep.1998
MITSUBISHI Nch POWER MOSFET
FY6BCH-02
HIGH-SPEED SWITCHING USE
10
1
10
0
2
3 4 5
7
2
3 4 5
7
10
1
10
2
2
3
4
5
7
10
3
2
3
4
5
7
2
Ciss
Coss
Crss
T
C
h = 25C
f = 1MH
Z
V
GS
= 0V
10
0
10
1
2
3 4 5 7
2
3 4 5
5 7
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
T
C
= 25C
125C
75C
V
DS
= 10V
Pulse Test
0
4
8
12
16
20
0
1.0
2.0
3.0
4.0
5.0
T
C
= 25C
V
DS
= 10V
Pulse Test
0
0.2
0.4
0.6
0.8
1.0
0
1.0
2.0
3.0
4.0
5.0
6A
3A
I
D
= 12A
T
C
= 25C
Pulse Test
0
20
40
60
80
100
10
1
2
10
0
3
5 7
2
10
1
3
5 7
2
10
2
3
5 7
T
C
= 25C
Pulse Test
V
GS
= 2.5V
4V
10
1
10
0
2
3 4 5
7
2
3 4 5
7
10
1
10
1
2
2
3
4
5
7
10
2
2
3
4
5
7
T
C
h = 25C
V
DD
= 10V
V
GS
= 4V
R
GEN
= R
GS
= 50
t
d(off)
t
d(on)
t
r
t
f
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(m
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Sep.1998
MITSUBISHI Nch POWER MOSFET
FY6BCH-02
HIGH-SPEED SWITCHING USE
0
1.0
2.0
3.0
4.0
5.0
0
2
4
6
8
10
V
DS
= 7V
15V
10V
T
C
h = 25C
I
D
= 6A
0.4
0.6
0.8
1.0
1.2
1.4
50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
0
0.4
0.8
1.2
1.6
2.0
50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
T
C
= 125C
75C
25C
V
GS
= 0V
Pulse Test
10
1
10
0
2
3
5
7
10
1
2
3
5
7
50
0
50
100
150
V
GS
= 4V
I
D
= 6A
Pulse Test
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(tC)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(
c
ha
)
(C/
W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(tC)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25C)
10
1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
4
2 3 5 7
10
3
2 3 5 7
10
2
2 3 5 7
10
1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
2 3 5 7
10
3
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P
DM
tw
D
=
T
tw
T
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