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Электронный компонент: M54531FP

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Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54531P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54531P and M54531FP are seven-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
High breakdown voltage (BV
CEO
40V)
High-current driving (Ic(max) = 400mA)
With clamping diodes
Driving available with PMOS IC output
Wide input voltage range (V
I
= 40 to +40V)
Wide operating temperature range (Ta = 20 to +75
C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M54531P and M54531FP each have seven circuits con-
sisting of NPN Darlington transistors. A serial circuit includ-
ing a diode and resistance of 20k
is provided between in-
put transistor bases and input pins. A spike-killer clamping
diode is provided between each output pin (collector) and
COM pin (pin 9). The output transistor emitters are all con-
nected to the GND pin (pin 8).
The collector current is 400mA maximum. Collector-emitter
supply voltage is 40V maximum.
The M54531FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
V
mA
V
mA
V
W
C
C
0.5 ~ +40
400
40 ~ +40
400
40
1.47(P)/1.00(FP)
20 ~ +75
55 ~ +125
V
CEO
I
C
V
I
I
F
V
R
P
d
T
opr
T
stg
20K
2K
20K
COM
GND
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
The seven circuits share the COM and GND.
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = 20 ~ +75
C)
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25
C, when mounted on board
1
IN1
IN2
IN3
IN4
IN5
IN6
IN7
COM COMMON
GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
O7
O6
O5
O4
O3
O2
O1
16P4(P)
Package type 16P2N-A(FP)
INPUT
OUTPUT
POWEREX
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54531P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
(Unless otherwise noted, Ta = 20 ~ +75
C)
V
A
V
A
--
V
V
V
O
V
IL
--
--
--
--
0
9
6
0
40
1
I
C
V
IH
0
0
--
--
400
200
35
mA
V
I
I
V
CE (sat)
40
--
--
--
--
--
--
--
1000
--
1.3
1.0
1.1
2.0
--
1.4
--
3500
--
2.4
1.6
1.8
3.8
20
2.4
100
--
V
mA
+
: The typical values are those measured under ambient temperature (Ta) of 25
C. There is no guarantee that these values are obtained under any
conditions.
ns
ns
--
--
30
680
--
--
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
PG
50
C
L
Measured device
OPEN
V
O
R
L
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
s, tr = 6ns, tf = 6ns, Z
O
= 50
V
P
= 9V
P-P
(2) Input-output conditions : R
L
= 25
, V
O
= 10V
(3) Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
Parameter
Limits
min
typ
max
Symbol
Unit
Output voltage
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
Duty Cycle
P : no more than 8%
FP : no more than 6%
Duty Cycle
P : no more than 30%
FP : no more than 25%
"L" input voltage
"H" input voltage
I
C
400mA
I
C
200mA
I
CEO
= 100
A
V
I
= 9V, I
C
= 400mA
V
I
= 6V, I
C
= 200mA
V
I
= 18V
V
I
= 35V
V
I
= 35V
I
F
= 400mA
V
R
= 40V
V
CE
= 4V, I
C
= 300mA, Ta = 25
C
Collector-emitter breakdown voltage
Input reverse current
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
+
max
Collector-emitter saturation voltage
Input current
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta = 20 ~ +75
C)
V
(BR) CEO
I
IR
V
F
I
R
h
FE
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
C)
Turn-on time
Turn-off time
C
L
= 15pF (note 1)
t
on
t
off
ton
50%
50%
50%
50%
toff
INPUT
OUTPUT
POWEREX
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54531P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
Ambient temperature Ta (C)
M54531FP
M54531P
Power dissipation Pd (W)
0
0
0.5
1.0
1.5
2.0
25
50
75
100
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE
(sat) (V)
0
0
100
200
V
I
= 6V
Ta = 20C
Ta = 25C
Ta = 75C
300
400
0.4
0.8
1.2
1.6
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
(M54531P)
Duty cycle (%)
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value in the circle represents the
value of the simultaneously-operated circuit.
Ta = 25C
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value in the circle represents the
value of the simultaneously-operated circuit.
Ta = 25C
0
0
100
200
300
400
500




20
40
60
80
100
Collector current Ic (mA)
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value in the circle represents the
value of the simultaneously-operated circuit.
Ta = 75C
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value in the circle represents the
value of the simultaneously-operated circuit. Ta = 75C
Duty-Cycle-Collector Characteristics
(M54531P)
Duty cycle (%)
0
0
100
200
300
400
500


20
40
60
80
100
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
(M54531FP)
Duty cycle (%)
0
0
100
200
300
400
500


20
40
60
80
100
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
(M54531FP)
Duty cycle (%)
0
0
100
200
300
400
500



20
40
60
80
100
Collector current Ic (mA)
POWEREX
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54531P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
10
1
10
3
V
CE
= 4V
Ta = 25C
Ta = 75C
Ta = 20C
5
3
2
7
10
4
5
3
2
7
10
3
10
2
2
3
5
7
10
2
2
3
5
7
DC amplification factor h
FE
Grounded Emitter Transfer Characteristics
Input voltage V
I
(V)
0
V
CE
= 4V
Ta = 75C
Ta = 20C
Ta = 25C
100
200
300
400
0
1
2
3
4
Collector current Ic (mA)
Input Characteristics
Input voltage V
I
(V)
0
Ta = 25C
Ta = 75C
Ta = 20C
0.5
1.0
1.5
2.0
0
5
10
15
20
25
Input current I
I
(mA)
Clamping Diode Characteristics
Forward bias voltage V
F
(V)
0
0
100
200
Ta = 20C
Ta = 25C
Ta = 75C
300
400
0.5
1.0
1.5
2.0
Forward bias current I
F
(mA)
POWEREX