Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
IN7
7
10
IN5
5
12
IN4
4
13
IN3
3
IN2
2
15
1
IN1
16
GND
COM COMMOM
9
8
IN6
6
11
O1
O2
O3
O4
O5
O6
O7
14
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)
INPUT
OUTPUT
Package type
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Unit:
The seven circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
INPUT
OUTPUT
GND
10.5k
10k
Vz=7V
COM
PIN CONFIGURATION
DESCRIPTION
M63812P, M63812FP, M63812GP and M63812KP are
seven-circuit Singe transistor arrays with clamping diodes.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
FEATURES
q
Four package configurations (P, FP, GP and KP)
q
Medium breakdown voltage (BV
CEO
35V)
q
Synchronizing current (I
C(max)
= 300mA)
q
With clamping diodes
q
With zener diodes
q
Low output saturation voltage
q
Wide operating temperature range (Ta=40 to +85
C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63812P, M63812FP, M63812GP and M63812KP each
have seven circuits consisting of NPN transistor.A spike-
killer clamping diode is provided between each output pin
(collector) and COM pin (pin9). The transistor emitters are all
connected to the GND pin (pin 8). The transistors allow syn-
chronous flow of 300mA collector current. A maximum of 35V
voltage can be applied between the collector and emitter.
CIRCUIT DIAGRAM
V
mA
V
mA
V
W
C
C
0.5 ~ +35
300
0.5 ~ +35
300
35
1.47
1.00
0.80
0.78
40 ~ +85
55 ~ +125
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = 40 ~ +85
C)
Output, H
Current per circuit output, L
V
CEO
I
C
V
I
I
F
V
R
P
d
T
opr
T
stg
Ta = 25
C, when mounted
on board
M63812P
M63812FP
M63812GP
M63812KP
POWEREX
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle no more than 45%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
ton
toff
50%
50%
50%
50%
OUTPUT
INPUT
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
s, tr = 6ns, tf = 6ns, Zo = 50
, V
IH
= 18V
(2)Input-output conditions : R
L
=220
,Vo=35V
(3)Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
OUTPUT
INPUT
Vo
Measured device
PG
50
R
L
C
L
OPEN
RECOMMENDED OPERATING CONDITIONS
(Unless otherwise noted, Ta = 40 ~ +85
C)
V
(BR) CEO
V
IN(on)
V
R
I
R
h
FE
V
V
V
A
--
35
--
--
13
--
--
50
--
--
--
19
1.2
--
--
--
0.2
0.8
23
2.0
10
--
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
V
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
Collector-emitter breakdown voltage
"On" input voltage
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
I
CEO
= 10
A
I
IN
= 1mA, I
C
= 10mA
I
IN
= 2mA, I
C
= 150mA
I
IN
= 1mA, I
C
= 10mA
I
F
= 250mA
V
R
= 35V
V
CE
= 10V, I
C
= 10mA
V
CE(sat)
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta = 25
C)
V
O
V
0
0
0
0
0
0
0
0
0
0
--
--
--
--
--
--
--
--
--
--
35
250
160
250
130
250
120
250
120
30
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Output voltage
mA
V
I
C
V
IN
Input voltage
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
M63812P
M63812FP
M63812GP
M63812KP
ns
ns
--
--
140
240
--
--
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Turn-on time
Turn-off time
t
on
t
off
C
L
= 15pF (note 1)
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
C)
POWEREX
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
400
300
200
100
0
0
100
20
40
60
80
1
~
3
4
5
6
7
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 25
C
Thermal Derating Factor Characteristics
Ambient temperature Ta (
C)
Power dissipation Pd (W)
Input Characteristics
Input voltage V
I
(V)
Input current
I
I
(mA)
Duty-Cycle-Collector Characteristics
(M63812P)
Duty cycle (%)
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
(M63812P)
Duty cycle (%)
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
(M63812FP)
Duty cycle (%)
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
(M63812FP)
Duty cycle (%)
Collector current Ic (mA)
2.0
1.5
1.0
0.5
0
0
25
50
75
100
M63812P
M63812FP
M63812GP
M63812KP
0.744
0.520
0.418
0.406
85
4
3
2
1
0
0
30
25
20
15
10
5
Ta=25
Ta = 40
C
Ta = 25
C
Ta=85
C
0
100
20
40
60
80
400
300
200
100
0
5
6
7
1
~
4
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 25
C
400
300
200
100
0
0
100
20
40
60
80
1
~
2
3
4
5
6
7
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 85
C
400
300
200
100
0
0
100
20
40
60
80
1
2
3
4
5
6
7
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 85
C
POWEREX
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle-Collector Characteristics
(M63812GP/KP)
Duty cycle (%)
Collector current
Ic
(mA)
Duty Cycle-Collector Characteristics
(M63812GP/KP)
Duty cycle (%)
Collector current
Ic
(mA)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
DC amplification f
actor h
FE
400
300
200
100
0
0
100
20
40
60
80
1
~
2
4
5
6
7
3
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 25
C
400
300
200
100
0
0
100
20
40
60
80
1
2
3
4
56
7
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 85
C
250
200
150
100
50
0
0
0.2
0.4
0.6
0.8
Ta = 25
C
I
B
= 0.5mA
I
B
= 1mA
I
B
= 1.5mA
I
B
= 3mA
I
B
= 2mA
100
80
60
40
20
0
0
0.05
0.10
0.15
0.20
Ta = 25
C
V
I
= 12V
V
I
= 16V
V
I
= 20V
V
I
= 24V
V
I
= 32V
V
I
= 28V
100
80
60
40
20
0
0
0.05
0.10
0.15
0.20
Ta = 85
C
I
I
= 2mA
Ta = 25
C
Ta = 40
C
10
0
10
1
10
2
10
1
10
2
10
3
2 3
5 7
2 3
5 7
2
3
5
7
2
3
5
7
10
3
2 3
5 7
V
CE
10V
Ta = 25
C
POWEREX
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Grounded Emitter Transfer Characteristics
Input voltage V
I
(V)
Collector current
Ic
(mA)
Grounded Emitter Transfer Characteristics
Input voltage V
I
(V)
Collector current
Ic
(mA)
Clamping Diode Characteristics
Forward bias voltage V
F
(V)
F
orw
ard bisa current
I
F
(mA)
50
40
30
20
10
0
0
2
4
6
8
V
CE
= 4V
12
Ta = 85
C
Ta = 25
C
Ta = 40
C
10
250
200
150
100
50
0
0
4
8
12
16
20
Ta = 85
C
Ta = 25
C
Ta = 40
C
V
CE
= 4V
250
200
150
100
50
0
0
0.4
0.8
1.2
1.6
2.0
Ta = 40
C
Ta = 85
C
Ta = 25
C
POWEREX
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