Jan. 2000
Unit:
The seven circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
INPUT
OUTPUT
GND
2.7k
10k
COM
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)
Package type
IN7
7
10
IN5
5
12
INPUT
OUTPUT
IN4
4
13
INz3
3
IN2
2
15
1
IN1
16
GND
COM COMMOM
9
8
IN6
6
11
O1
O2
O3
O4
O5
O6
O7
14
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63813P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
PIN CONFIGURATION
DESCRIPTION
M63813P/FP/GP/KP are seven-circuit Single transistor ar-
rays with clamping diodes. The circuits are made of NPN
transistors. Both the semiconductor integrated circuits per-
form high-current driving with extremely low input-current
supply.
FEATURES
q
Four package configurations (P, FP, GP and KP)
q
Medium breakdown voltage (BV
CEO
35V)
q
Synchronizing current (I
C(max)
= 300mA)
q
With clamping diodes
q
Low output saturation voltage
q
Wide operating temperature range (Ta = 40 to +85
C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63813P/FP/GP/KP each have seven circuits consist-
ing of NPN transistor. A spike-killer clamping diode is pro-
vided between each output pin (collector) and COM pin
(pin9). The transistor emitters are all connected to the GND
pin (pin 8). The transistors allow synchronous flow of 300mA
collector current. A maximum of 35V voltage can be applied
between the collector and emitter.
CIRCUIT DIAGRAM
V
mA
V
mA
V
W
C
C
0.5 ~ +35
300
0.5 ~ +35
300
35
1.47
1.00
0.80
0.78
40 ~ +85
55 ~ +125
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = 40 ~ +85
C)
Output, H
Current per circuit output, L
V
CEO
I
C
V
I
I
F
V
R
P
d
T
opr
T
stg
Ta = 25
C, when mounted
on board
M63813P
M63813FP
M63813GP
M63813KP
POWEREX
Jan. 2000
ton
toff
50%
50%
50%
50%
INPUT
OUTPUT
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
s, tr = 6ns, tf = 6ns, Zo = 50
, V
IH
= 3V
(2)Input-output conditions : R
L
= 220
, Vo = 35V
(3)Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
PG
50
R
L
OUTPUT
INPUT
Vo
C
L
OPEN
Measured device
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63813P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle no more than 45%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
RECOMMENDED OPERATING CONDITIONS
(Unless otherwise noted, Ta = 40 ~ +85
C)
V
(BR) CEO
V
IN(on)
V
F
I
R
h
FE
V
V
V
A
--
35
--
--
2.4
--
--
50
--
--
--
35
1.2
--
--
--
0.2
0.8
4.2
2.0
10
--
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
V
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
Collector-emitter breakdown voltage
"On" input voltage
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
I
CEO
= 10
A
I
IN
= 1mA, I
C
= 10mA
I
IN
= 2mA, I
C
= 150mA
I
IN
= 1mA, I
C
= 10mA
I
F
= 250mA
V
R
= 35V
V
CE
= 10V, I
C
= 10mA
V
CE(sat)
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta = 25
C)
V
O
V
0
0
0
0
0
0
0
0
0
0
--
--
--
--
--
--
--
--
--
--
35
250
160
250
130
250
120
250
120
20
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Output voltage
mA
V
I
C
V
IN
Input voltage
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
M63813P
M63813FP
M63813GP
M63813KP
ns
ns
--
--
125
250
--
--
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Turn-on time
Turn-off time
t
on
t
off
C
L
= 15pF (note 1)
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
C)
POWEREX
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63813P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
400
300
200
100
0
0
100
20
40
60
80
1
~
3
4
5
6
7
Thermal Derating Factor Characteristics
Ambient temperature Ta (
C)
Power dissipation Pd (W)
Input Characteristics
Input voltage V
I
(V)
Input current
I
I
(mA)
Duty Cycle-Collector Characteristics
(M63813P)
Duty cycle (%)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
(M63813P)
Duty cycle (%)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
(M63813FP)
Duty cycle (%)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
(M63813FP)
Duty cycle (%)
Collector current Ic (mA)
2.0
1.5
1.0
0.5
0
0
25
50
75
100
85
0
100
20
40
60
80
400
300
200
100
0
5
6
7
1
~
4
400
300
200
100
0
0
100
20
40
60
80
1
~
2
3
4
5
6
7
400
300
200
100
0
0
100
20
40
60
80
1
2
3
4
5
6
7
0.744
0.520
0.418
0.406
M63813P
M63813FP
M63813GP
M63813KP
8
6
4
2
0
0
20
15
10
5
Ta = 85
C
Ta = 25
C
Ta = 40
C
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 25
C
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 85
C
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 25
C
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 85
C
POWEREX
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63813P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle-Collector Characteristics
(M63813GP/KP)
Duty cycle (%)
Collector current
Ic
(mA)
Duty Cycle-Collector Characteristics
(M63813GP/KP)
Duty cycle (%)
Collector current
Ic
(mA)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
DC amplification f
actor h
FE
400
300
200
100
0
0
100
20
40
60
80
1
~
2
4
5
6
7
3
400
300
200
100
0
0
100
20
40
60
80
1
2
3
4
56
7
250
200
150
100
50
0
0
0.2
0.4
0.6
0.8
100
80
60
40
20
0
0
0.05
0.10
0.15
0.20
100
80
60
40
20
0
0
0.05
0.10
0.15
0.20
10
0
10
1
10
2
10
1
10
2
10
3
2 3
5 7
2 3
5 7
2
3
5
7
2
3
5
7
10
3
2 3
5 7
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 25
C
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 85
C
I
B
= 3mA
Ta = 25
C
I
B
= 2mA
I
B
= 1.5mA
I
B
= 1mA
I
B
= 0.5mA
Ta = 25
C V
I
= 7V
V
I
= 6V
V
I
= 5V
V
I
= 4V
V
I
= 3V
V
I
= 2V
I
I
= 2mA
Ta = 40
C
Ta = 25
C
Ta = 85
C
V
CE
10V
Ta = 25
C
POWEREX
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63813P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Grounded Emitter Transfer Characteristics
Input voltage V
I
(V)
Collector current
Ic
(mA)
Grounded Emitter Transfer Characteristics
Input voltage V
I
(V)
Collector current
Ic
(mA)
Clamping Diode Characteristics
Forward bias voltage V
F
(V)
F
orw
ard bisa current
I
F
(mA)
50
40
30
20
10
0
250
200
150
100
50
0
250
200
150
100
50
0
0
0.4
0.8
1.2
1.6
2.0
0
0.4
0.8
1.2
1.6
2.0
Ta = 25
C
Ta = 85
C
Ta = 40
C
0
1
2
3
4
5
V
CE
= 4V
Ta = 85
C
Ta = 25
C
Ta = 40
C
Ta = 85
C
Ta = 25
C
Ta = 40
C
V
CE
= 4V
POWEREX
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