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Электронный компонент: M63824KP

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Sep. 2001
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63824GP/KP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
The M63824GP/KP 7-channel sinkdriver, consists of 14 NPN
transistors connected to from seven high current gain driver
pairs.
FEATURES
G
High breakdown voltage (BV
CEO
50V)
G
High-current driving (I
C(max)
= 500mA)
G
With clamping diodes
G
3V micro computer series compatible input
G
Wide operating temperature range (Ta = 40 to +85
C)
APPLICATION
Output for 3 voltage microcomputer series and interface with
high voltage system. Relay and small printer driver, LED, or
incandescent display digit driver.
FUNCTION
The M63824GP/KP is transistor-array of high active level
seven units type which can do direct drive of 3 voltage micro-
computer series. A resistor of 1.05k
is connected between
the input pin. A clamp diode for inductive load transient sup-
pression is connected for the output pin (collector) and COM
pin (pin9). All emitters of the output transistor are connected
to GND (pin8). The outputs are capable of driving 500mA
and are rated for operation with output voltage up to 50V.
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
V
mA
V
mA
V
W
C
C
0.5 ~ +50
500
0.5 ~ +10
500
50
0.80(GP)/0.78(KP)
40 ~ +85
55 ~ +125
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = 40 ~ +85
C)
Output, H
Current per circuit output, L
Ta = 25
C, when mounted on board
V
CEO
I
C
V
I
I
F
V
R
P
d
T
opr
T
stg
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
IN1
IN2
IN3
IN4
IN5
IN6
IN7
GND
COM
COMMON
INPUT
OUTPUT
O1
O2
O3
O4
O5
O6
O7
16P2S-A(GP)
16P2Z-A(KP)
Package type
CIRCUIT DIAGRAM
COM
GND
1.05K
3K
7.2K
OUTPUT
INPUT
Unit :
The seven circuits share the COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
POWEREX
Sep. 2001
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63824GP/KP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
--
--
I
C
400mA
Duty Cycle
GP/KP : no more than 2%
RECOMMENDED OPERATING CONDITIONS
(Unless otherwise noted, Ta = 40 ~ +85
C)
V
Parameter
0
Limits
min
typ
max
Symbol
Unit
V
O
Output voltage
"H" input voltage
"L" input voltage
Duty Cycle
GP/KP : no more than 10%
Collector current (Current per
1 circuit when 7 circuits are
coming on simultaneously)
I
C
0
0
2.7
0
--
--
--
50
400
200
10
0.6
mA
V
V
V
IH
V
IL
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
ns
ns
--
--
15
350
--
--
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Turn-on time
Turn-off time
t
on
t
off
C
L
= 15pF (note 1)
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
C)
--
1.2
1.0
0.9
1.5
1.4
--
2500
50
--
--
--
--
--
--
1000
V
(BR) CEO
I
I
V
F
I
R
h
FE
V
V
mA
V
A
--
--
1.6
1.3
1.1
2.4
2.0
100
--
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Collector-emitter breakdown voltage
Input current
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
I
CEO
= 100
A
I
I
= 500
A, I
C
= 350mA
I
I
= 350
A, I
C
= 200mA
I
I
= 250
A, I
C
= 100mA
V
I
= 3V
I
F
= 350mA
V
R
= 50V
V
CE
= 2V, I
C
= 350mA
V
CE(sat)
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta = 25
C)
INPUT
50%
50%
50%
50%
OUTPUT
ton
toff
PG
INPUT
OUTPUT
V
O
R
L
OPEN
C
L
50
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10
s, tr = 6ns, tf = 6ns, Zo = 50
V
I
= 0 ~ 3V
(2)Input-output conditions : R
L
= 25
, Vo = 10V
(3)Electrostatic capacity C
L
includes floating capacitance
at connections and input capacitance at probes
Measured device
POWEREX