QIC1208001
Powerex Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272
Dual AC Switch IGBT Module
1200V 75A
Preliminary
Page 1
3/13/98
Description:
Powerex Dual AC Switch IGBT Module designed
specially for customer applications.
Features:
Isolated Mounting
Low Drive Requirement
Internal Series Gate Resistors
Low Vce(sat)
Rectifier Grade Low Vf Diodes
Dim
Inches
Millimeters
A
3.70
94.0
B
3.150
K
0.01
80.0
K
0.25
C
1.89
48.0
D
1.18 Max.
30.0 Max
E
0.90
23.0
F
0.83
21.2
G
0.71
18.0
H
0.67
17.0
J
0.63
16.0
K
0.51
13.0
L
0.47
12.0
M
0.30
7.5
N
0.28
7.0
P
0.256 Dia.
Dia. 6.5
Q
0.26
6.5
R
---
M5
S
0.16
4.0
C1
E2
E1
G1
C2E1
G2
E2
QIC1208001
Powerex Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272
Dual AC Switch IGBT Module
1200V 75A
Preliminary
Page 2
3/13/98
Electrical Charactistics
Characteristics (Each IGBT or Each Diode)
Symbol
Parameter
Min
Typ.
Max.
Units
IGBT
V
CES
Collector Emitter Voltage (G-E SHORT)
1200
V
V
GES
Gate Emitter Voltage
K
20
V
I
GES
Gate Leakage Current V
GE
=V
GES
V
CE
=0
0.5
uA
I
CES
Collector-Cutoff Current V
CE
=600V V
GE
=0
1
mA
V
GE(th)
Gate Emitter Threshold Voltage I
C
=7.5mA V
CE
=10V
4.5
6.0
7.5
V
C
IES
Input Capacitance V
CE
=10V V
GE
=0 f=1Mhz
15
nF
C
OES
Output Capacitance V
CE
=10V V
GE
=0 f=1Mhz
5.3
nF
C
RES
Reverse Transfer Capacitance V
CE
=10V V
GE
=0 f=1Mhz
3
nF
R
th(j-c)
Thermal Impedance Junction to case (Per IGBT)
0.21
C/W
DIODE
R
th(j-c)
Thermal Impedance Junction to case (Per Diode)
0.30
C/W
PACKAGE
Vrms
V Isolation
2500
V
Module weight
190
g
Mounting torque M6 Mounting screw
4
Nm
Terminal torque, M6 Terminal Screw
6
Nm
R
th(jc-s)
Thermal Impedance Case to Sink
0.08
C/W
Typical IGBT Collector-Emitter Saturation Voltage
0
1
2
3
4
5
0
25
50
75
100
125
150
Current (Amperes)
Vce(sat) (Volts)
25C
125C
Typical Diode Vf
0
0.3
0.6
0.9
1.2
1.5
0
25
50
75
100
125
150
Current (Amperes)
Vf (Volts)
25C
125
C
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