QID0630006
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272
Dual IGBT H-Series
Hermetic
Module
300
Amperes/600
Volts
Page 1
4/11/2001
Description:
Powerex IGBT Hermetic modules are
designed for use in switching
applications. Each Module consists of
two IGBT transistors in a half bridge
configuration with each transistor
having a reverse connected super fast
recovery free wheel diode. All
components are located in a
hermetically sealed chamber and are
electrically isolated from the heat
sinking base plate, offering simplified
system assembly and thermal
management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Fast Recovery Free-Wheel
Diode
High Frequency Operation (20-
25kHz)
Isolated Base plate for Easy Heat
sinking
Fully Hermetic Package
Package Design Capable of Use at
High Altitudes
Schematic:
Applications:
AC Motor Control
Motion/Servo Control
Air Craft Applications
Ordering Information:
Contact Powerex Custom Modules
QID0630006
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272
Dual IGBT H-Series
Hermetic
Module
300
Amperes/600
Volts
Page 2
4/11/2001
Maximum Ratings, Tj=25
C unless otherwise specified
Ratings Symbol
Units
Collector Emitter Voltage
V
CES
600 Volts
Gate Emitter Voltage
V
GES
20
Volts
Collector Current
I
C
300
Amperes
Peak Collector Current
I
CM
600*
Amperes
Diode Forward Current
I
FM
300
Amperes
Diode Forward Surge Current
I
FM
600*
Amperes
Power Dissipation
P
d
1100 Watts
V Isolation
V
RMS
2500 Volts
Static Electrical Characteristics, Tj=25
C unless otherwise specified
Characteristic Symbol
Test
Conditions
Min Typ Max Units
Collector Cutoff Current
I
CES
V
CE
=V
CES
1.0
mA
Gate Leakage Current
I
GES
V
CE
=0V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
=30mA,
V
CE
=10V
4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=300A,
V
GE
=15V
2.1 2.8 Volts
V
CE(sat)
I
C
=300A,
V
GE
=15V,
T
j
=150
C
2.15 Volts
Total Gate Charge
Q
G
V
CC
=300V,
I
C
=300A,
V
GS
=15V
900 nC
Diode Forward Voltage
V
FM
I
E
=300A,
V
GS
=0V
2.8
Volts
Dynamic Electrical Characteristics, Tj=25
C unless otherwise specified
Characteristic Symbol
Test
Conditions
Min Typ Max Units
Input Capacitance
C
ies
V
GE
=0V 30 nF
Output Capacitance
C
oes
V
CE
=10V
10.5
nF
Reverse Transfer Capacitance
C
res
f=1MHz
6
nF
Turn on Delay time
t
d(on)
V
CC
=300V 350 nS
Rise Time
t
r
I
C
=300A
600
nS
Turn off delay time
t
d(off)
V
GE1
=V
GE2
=15
V
350 nS
Fall Time
t
f
R
G
=2.1
300 nS
Diode Reverse Recovery Time
trr
I
E
=300A
150
nS
Diode reverse Recovery Charge
Qrr
di
E
/dt=-
600A/
S
0.81
C
Thermal and Mechanical Characteristics, Tj=25
C unless otherwise specified
Characteristic Symbol
Test
Conditions
Min Typ Max Units
Thermal Resistance, Junction to Case
R
JC
Per IGBT
0.11
C/W
Thermal Resistance, Junction to Case
R
JC
Per Diode
0.24
C/W
QID0630006
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272
Dual IGBT H-Series
Hermetic
Module
300
Amperes/600
Volts
Page 3
4/11/2001
QID0630006
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272
Dual IGBT H-Series
Hermetic Module
300 Amperes/600 Volts
Page 4
4/11/2001
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