FMB2227A
NPN & PNP Complementary Dual Transistor
SuperSOT-6 Surface Mount Package
Absolute Maximum Ratings
T
A = 25C unless otherwise noted
C/W
180
Thermal Resistance, Junction to Ambient
R
JA
C
150
Junction Temperature
T
J
C
-55 to +150
Storage Temperature Range
T
STG
W
0.7
Power Dissipation @Ta = 25C*
P
D
mA
500
Collector Current
I
C
V
5
Emitter-Base Voltage
V
EBO
V
60
Collector-Base Voltage
V
CBO
V
30
Collector-Emitter Voltage
V
CEO
Units
Value
Parameter
Symbol
Electrical Characteristics
T
A = 25C unless otherwise noted
V
5
Ie = 10 uA
Emitter to Base Voltage
BV
EBO
V
60
Ic = 10 uA
Collector to Base Voltage
BV
CBO
V
30
Ic = 10 mA
Collector to Emitter Voltage
BV
CEO
Units
Max
Min
Test Conditions
Parameter
Symbol
Page 1 of 2
1998 Fairchild Semiconductor Corporation
2227A.lwpPr19&63(Y1)
Package: SuperSOT-6
Device Marking:
.001
Note: The "
.
" (dot) signifies Pin 1
Transistor 1 is NPN device,
transistor 2 is PNP device.
This complementary dual device was designed for use as a medium power amplifier and switch requiring
collector currents up to 300mA. Sourced from Pr19 (NPN) and Pr63 (PNP).
Discrete Power
&
Signal Technologies
FMB2227A
C2
E1
C1
B2
E2
B1
V
1.3
Ic = 150mA, Ib=15mA
Base-Emitter Saturation Voltage
V
BE(sat)
V
0.4
1.4
Ic = 150mA, Ib=15mA
Ic = 300mA, Ib=30mA
Collector-Emitter Saturation Voltage
V
CE(sat)
-
50
75
100
30
Vce = 10V, Ic = 1.0mA
Vce = 10V, Ic = 10mA
Vce = 10V, Ic = 150mA
Vce = 10V, Ic = 300mA
DC Current Gain
h
FE
nA
30
Veb = 3.0V
Emitter Cutoff Current
I
EBO
nA
30
Vcb = 50V
Collector Cutoff Current
I
CBO
Units
Max
Min
Test Conditions
Parameter
Symbol
NPN & PNP Complementary Dual Transistor
(continued)
Electrical Characteristics
T
A = 25C unless otherwise noted
Small - Signal Characteristics Typical
MHz
250
Vce = 20V, Ic = 50mA, f = 100MHz
Current Gain - Bandwidth Product
f
T
pF
20
Veb = 0.5V, f = 100kHz
Input Capacitance
C
IB
pF
6
Vcb = 10V, f = 1.0MHz
Output Capacitance
C
OB
Page 2 of 2
1998 Fairchild Semiconductor Corporation
2227A.lwpPr19&63(Y1)
FMB2227A
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