Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised February 6, 2003
Page 1
www.raytheonrf.com
Specifications are based on most current or latest revision.
PRODUCT INFORMATION
RMLA3565A-58
Wideband Low Noise MMIC Amplifier
RF Components
The Raytheon RF Components RMLA3565A-58 is a single bias wideband low noise MMIC amplifier
designed for the 3.5 - 6.5 GHz frequency range. The MMIC requires no external matching circuits or
external gate bias supply. This device uses Raytheon RF Components' advanced 0.25 m PHEMT
process to provide low noise, high linearity, and low current.
Description
Absolute
Ratings
Electrical
Characteristics
(50
System,
V
dd
= 4 V,
T = +25
o
C)
!
18.0 dB Gain typical
!
1.2 dB Noise Figure Typical 5.0 -6.5 GHz
!
Single Positive Bias
!
Small Outline Metal Base Quad Plastic Package
!
Internal 50
Matching
Features
Notes:
1. Pin = - 20, V
d
= 4.0 V, Frequency 3.5 -6.5 Ghz
2. Data de-embedded from fixture loss.
(Photo TBS)
Parameter
Symbol
Value
Unit
Positive Drain DC Voltage
V
dd
6.5
V
RF Input Power (from 50
source)
P
IN
(CW)
0
dBm
Drain Current
I
dd
130
mA
Case Operating Temperature
T
case
-35 to 85
C
Storage Temperature Range
T
storage
-40 to 110
C
Soldering Temperature
T
solder
220
C
Thermal Resistance
(Channel to Case)
R
jc
8
C/W
Parameter
Min
Typ
Max
Unit
Frequency Range
3.5
6.5
GHz
Gain (Small Signal)
1,2
17.0
18.0
dB
Gain Variation vs Temp
0.013
dB/C
Noise Figure
2
3.5 - 5 GHz
1.7
1.9
dB
5 - 6.5 GHz
1.3
1.4
dB
Parameter
Min
Typ
Max Unit
Power Out, P-1dB
8.0
9.0
dBm
IP3 @ 5.5GHz,-8dBm Pout
21.0
dBm
Idd
70
90
mA
Vdd
3.0
4.0
6.0
V
Input/Output Return Loss
10.0
5.0
dB
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised February 6, 2003
Page 2
www.raytheonrf.com
Specifications are based on most current or latest revision.
PRODUCT INFORMATION
RMLA3565A-58
Wideband Low Noise MMIC Amplifier
RF Components
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
The following briefly describes a procedure for evaluating the high efficiency PHEMT amplifier
packaged in a surface mount package. It may be noted that the chip is a fully monolithic single ended
two stage amplifier for 3.5 to 6.5 GHz applications. Figure 1 shows the functional block diagram of the
packaged product.
Test Fixture
Figure 2 shows the outline and pin-out descriptions for the packaged device. A typical test fixture
schematic showing external bias components is shown in Figure 3. Figure 4 shows typical layout of
an evaluation board corresponding to the schematic diagram. Typical performance of the test fixture
is shown in the performance data section. The following should be noted:
(1) Package pin designations are shown in figure 2.
(2) Vd is the drain voltage (positive) applied at the pins of the package.
(3) Vdd is the positive supply voltage at the evaluation board terminal.
Application
Information
Figure 1
Functional Block
Diagram
Figure 2
Package Outline
Dimensions
Dimensions in inches
RF IN
Pin# 8
RF OUT
Pin# 2
Ground
Pin# 1,3,4,6,9,10,11,13
Vd
Pin# 12
Ground
Pin# 7
Ground
Pin# 5
Pin#
Description
1
GND
2
RF Out
3
GND
4
GND
5
GND
6
GND
7
GND
8
RF In
9
GND
10
GND
11
GND
12
Vd
13
GND
(Package Base)
PLASTIC LID
SIDE SECTION
0.069 MAX.
0.010
0.230
0.246
0.282
1
2
3
5
4
6
7
9
8
10
12 11
0.041
1
2
3
0.015
0.200 SQ.
TOP VIEW
TOP VIEW
BOTTOM VIEW
5 4
6
7
9
8
10
12
11
0.030
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised February 6, 2003
Page 3
www.raytheonrf.com
Specifications are based on most current or latest revision.
PRODUCT INFORMATION
RMLA3565A-58
Wideband Low Noise MMIC Amplifier
RF Components
Figure 4
Layout and Assembly of
Test Evaluation Board
(RMLA3565A-58-TB)
Figure 3
Schematic for a
Typical Test
Evaluation Board
(RMLA3565A-58-TB)
The following sequence of procedure must be followed to properly test the power amplifier:
Test Procedure
for the evaluation board
(RMLA3565A-58-TB)
Step 1: Turn off RF input power.
Step 2: Use GND terminal of the evaluation board
to connect DC supply grounds.
Step 3: Apply drain supply voltage of +4.0 V to
evaluation board terminal Vdd.
Step 4:
After the bias condition is
established, RF input signal may now be
applied.
Step 5:
Follow turn-off sequence of:
(i) Turn off RF input power.
(ii) Turn down and off Vdd.
Parts List
for test evaluation board
RMLA3565A-58-TB)
Part
Value
EIA Size
Vendor(s)
C1
330 pF
.04" x .02"
AVX, Murata, Novacap,
C2
1000 pF
.04" x .02"
AVX, Murata, Novacap
C3
4.75 uF
.14"x .11"
Sprague, ATC, AVX, Murata
U1
RMLA3565A-58
.28" x .28" x .07"
Raytheon
P1, P2
Terminal
Samtec
J1, J2
SMA Connectors
E.F. Johnson
Board
RO4003(Rogers)
1.99x1.50x.032
Raytheon
RF Out
J2
U1
RF In
J1
C1 & C2
(OPT)
C3
Ground
(GND) P2
Vdd P1
C1
(Opt)
C2
(OPT)
C3
Vdd
P1
RF in
J1
RF out
J2
GND
P2
Ray
RMLA3565
-58
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised February 6, 2003
Page 4
www.raytheonrf.com
Specifications are based on most current or latest revision.
PRODUCT INFORMATION
RMLA3565A-58
Wideband Low Noise MMIC Amplifier
RF Components
Figure 5
Performance
Data
Gain and De-embedded Noise Figure
Vdd = 4.0V, Idd = 70 mA
Input Return Loss
Vdd = 4.0V, Idd = 70 mA
Output Return Loss
Vdd = 4.0V, Idd = 70 mA
Noise Figure, Gain, Idd vs. Vdd
Frequency = 5.5 GHz
0
5
10
15
20
25
3.5
4
4.5
5
5.5
6
6.5
Frequency (GHz)
O
u
tp
ut
R
e
tu
r
n
Los
s
(
dB
)
0
5
10
15
20
25
30
3.5
4
4.5
5
5.5
6
6.5
Frequency (GHz)
I
nput
R
e
t
u
r
n
Los
s
(
dB
)
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
3
4
5
6
Vdd (V)
No
is
e
F
ig
u
r
e
(
d
B
)
&
Id
d
/
Id
d
@
4
V
5
7
9
11
13
15
17
19
21
23
25
NF
Idd/Idd @ 4V
Gain
P1dB
Gain
NF
Idd/Idd @
P1dB
4
6
8
10
12
14
16
18
20
22
24
3.5
4
4.5
5
5.5
6
6.5
Frequency (GHz)
Ga
i
n
(d
B
)
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
N
o
i
s
e
F
i
g
ur
e
(
dB
)
Gain
NF
Gain
NF
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