Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 19, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Description
Absolute
Maximum
Ratings
Electrical
Characteristics
(At 25C) 50
system,
Vd=+5 V, Quiescent
current (Idq)=600 mA
28 dB small signal gain (typ.)
29 dBm saturated power out (typ.)
Circuit contains individual source Vias
Chip Size 4.45 mm x 3.50 mm
Features
Note:
1. Typical range of the negative gate voltages is -0.9 to 0.0V to set typical Idq of 600 mA.
Parameter
Symbol
Value
Unit
Positive DC Voltage (+5 V Typical)
Vd
+ 6
Volts
Negative DC Voltage
Vg
- 2
Volts
Simultaneous (Vd - Vg)
Vdg
+ 8
Volts
Positive DC Current
I
D
1092
mA
RF Input Power (from 50
source)
P
IN
+10
dBm
Operating Base plate Temperature
T
C
-30 to +85
C
Storage Temperature Range
T
Stg
-55 to +125
C
Thermal Resistance
R
jc
16
C/W
(Channel to Backside)
Parameter
Min
Typ
Max Unit
Frequency Range
18
22
GHz
Gate Supply Voltage (Vg)
1
-0.2
V
Gain Small Signal
22
26
dB
at Pin=-5 dBm
Gain Variation vs.
Frequency
+/-1
dB
Power Output
28
dBm
at 1 dB Compression
Power Output Saturated:
26
29
dBm
(Pin=+5 dBm)
Drain Current
600
mA
at Pin=-5 dBm
Parameter
Min
Typ
Max
Unit
Drain Current
660
mA
at P1 dB Compression
Power Added Efficiency
15
%
(PAE): at P1dB
OIP3
37
dBm
Input Return Loss
8
Db
(Pin=-5 dBm)
Output Return Loss
10
dB
(Pin=-5 dBm)
The Raytheon RMPA19000 is a high efficiency driver amplifier designed for use in point to point radio, point to
multi-point communications and other millimeter wave applications. The RMPA19000 is a 3-stage GaAs MMIC
amplifier utilizing Raytheon's advanced 0.15
m gate length Power PHEMT process and can be used in conjunction
with other driver or power amplifiers to achieve the required total power output.
RMPA19000
18-22 GHz Power Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 19, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Figure 1
Functional
Block Diagram
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC
Ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to
prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long
corresponding to a typically 2 mils gap between the chip and the substrate material.
Application
Information
Ground
(Back of Chip)
MMIC Chip
RF IN
Gate Supply
(VGA & VGB)
RF OUT
Drain Supply
(VDA & VDB)
Figure 2
Chip Layout and Bond
Pad Locations
(Chip Size=4.450 mm
x 3.500 mm x 50 m.
Back of Chip is RF and
DC Ground)
Dimensions in mm
1.570
1.930
1.750
0.0
0.152
0.0
3.910
3.324
4.450
0.378
3.126
3.500
0.0
0.181
RMPA19000
18-22 GHz Power Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 19, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Figure 3
Recommended
Application Schematic
Circuit Diagram
RF IN
RF OUT
Drain Supply (Vd= +5V)
(Connect to both VDA & VDB)
Gate Supply (Vg)
(VGA and/or VGB)
Ground
(Back of Chip)
MMIC Chip
100pF
10000pF
100pF
10000pF
L
L
L
L
Bond Wire Ls
Bond Wire Ls
RMPA19000
18-22 GHz Power Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 19, 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Note:
Use 0.003" x 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief. Vd should
biased from 1 supply on both sides as shown. Vg can be biased from either or both sides from 1 supply.
Figure 4
Recommended
Assembly and
Bonding Diagram
Vd
(Positive)
100pF
100pF
10000pF
10000pF
Vg
(Negative)
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
L< 0.015"
(4 Places)
Die-Attach
80Au/20Sn
Vd
(Positive)
100pF
10000pF
Vg
(Negative)
10000pF
100pF
RMPA19000
18-22 GHz Power Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 19, 2001
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
CAUTION:LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Recommended
Procedure
for Biasing and
Operation
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the ground
of the chip carrier. Slowly apply negative gate
bias supply voltage of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +5 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=600 mA.
Note:
An example auto bias sequencing circuit to apply negative gate voltage and positive drain voltage for the above procedure is shown below.
Step 5: After the bias condition is established, the RF
input signal may now be applied at the
appropriate frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power.
(ii) Turn down and off drain voltage (Vd).
(iii) Turn down and off gate bias voltage (Vg).
RMPA19000
18-22 GHz Power Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 19, 2001
Page 6
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
RMPA19000 Gain, Power Out Vs. Power In
Bias Vd=5 V, Id=600 mA, T=25 C
RMPA19000 Pout, PAE, Gain Vs. Freq
Bias Vd=5 V, Id=600 mA, T=25 C
Performance
Data
RMPA19000 S21, S11, S22 Mag Vs. Freq.
Bias Vd=5 V, Id=600 mA, T=25 C
RMPA19000
18-22 GHz Power Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 19, 2001
Page 7
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
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