Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised January 11, 2002
Page 1
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
The Raytheon RMPA25000 is a high efficiency power amplifier designed for use in Sat-Com, point to point radio,
point to multi-point communications, LMDS and other millimeter wave applications. The RMPA25000 is a 2-stage
GaAs MMIC amplifier utilizing Raytheon's advanced 0.15 mm gate length Power PHEMT process and can be used
in conjunction with other driver or power amplifiers to achieve the required total power output.
Description
Absolute
Maximum
Ratings
Electrical
Characteristics
1
18 dB small signal gain (typ.)
33 dBm saturated power out (typ.)
Circuit contains individual source vias
Chip size 4.45 mm x 3.87 mm
Features
Note:
1. Operated at 25C, 50 ohm system, Vd=+5V, quiescent current (Idq)=1200 mA).
2. Typical range of the negative gate voltage is -1.0 to 0.0V to set typical Idq of 1200 mA.
Parameter
Symbol
Value
Unit
Positive DC Voltage (+5 V Typical)
Vd
+ 6
Volts
Negative DC Voltage
Vg
- 2
Volts
Simultaneous (Vd - Vg)
Vdg
+ 8
Volts
Positive DC Current
Id
2096
mA
RF Input Power (from 50
source)
Pin
+20
dBm
Operating Base plate Temperature
Tc
-30 to +85
C
Storage Temperature Range
Tstg
-55 to +125
C
Thermal Resistance
Rjc
8.8
C/W
(Channel to Backside)
RMPA25000
23.5-26 GHz 2 Watt Power Amplifier MMIC
Parameter
Min
Typ
Max
Unit
Frequency Range
23.5
26
GHz
Gate Voltage (Vg)
2
-0.3
V
Gain Small Signal
13
18
dB
(Pin=-5 dBm)
Gain Variation vs.
Frequency
+/-1
dB
Power Output
32
dBm
at 1 dB Compression
Power Output Saturated:
31.5
33
dBm
(Pin=+17 dBm)
Parameter
Min
Typ
Max Unit
Drain Current
1200
mA
at Pin=-5 dBm
Drain Current
1430
mA
at P1 dB Compression
Power Added Efficiency
(PAE) at P1dB
22
%
OIP3
38
dBm
Input Return Loss
12
dB
(Pin=-5 dBm)
Output Return Loss
12
dB
(Pin=-5 dBm)
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised January 11, 2002
Page 2
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC
Ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to
prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding
to a typical 2 mil gap between the chip and the substrate material.
Application
Information
Figure 1
Functional Block
Diagram
RMPA25000
23.5-26 GHz 2 Watt Power Amplifier MMIC
RF IN
RF OUT
Gate Supply
(VGA & VGB)
Drain Supply
(VDA & VDB)
Ground
(Back of Chip)
MMIC Chip
Figure 2
Chip Layout and Bond
Pad Locations
(Chip Size=4.454 mm x
3.874 mm x 50
m.
Back of Chip is RF and
DC Ground)
3.874
0.0
0.0
0.226
1.699
2.724
0.202
0.726
3.814
4.454
0.261
1.707
1.937
2.167
3.614
3.690
0.137
3.737
2.984
0.149
4.250
Dimensions in mm
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised January 11, 2002
Page 3
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
RMPA25000
23.5-26 GHz 2 Watt Power Amplifier MMIC
Figure 3
Schematic of
Application Circuit
Drain Supply (Vd= +5 V)
(Connect to both VDA & VDB)
Gate Supply (Vg)
(VGA and/or VGB)
RF IN
RF OUT
Ground
(Back of Chip)
MMIC Chip
100pF
10,000pF
L
Bond Wire Ls
10,000pF
100pF
Bond Wire Ls
L
L
L
Vd
(Positive)
100pF
100pF
100pF
100pF
10,000pF
10,000pF
10,000pF
10,000pF
Vg
(Negative)
Vg
(Negative)
Vd
(Positive)
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
L< 0.015"
(4 Places)
Die-Attach
80Au/20Sn
Figure 4
Recommended
Assembly and
Bonding Diagram
Note: Use 0.003" x 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised January 11, 2002
Page 4
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
RMPA25000
23.5-26 GHz 2 Watt Power Amplifier MMIC
CAUTION:LOSS OF GATE VOLTAGE (Vg) WHILE CORRESPONDING DRAIN VOLTAGE (Vd) IS PRESENT CAN
DAMAGE THE AMPLIFIER.
The following sequence must be followed to properly test the amplifier.
Recommended
Procedure
for biasing and
operation
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the ground
of the chip carrier.
Slowly apply negative gate bias supply voltage
of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +5 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=1200 mA
.Step 5: After the bias condition is established, the RF
input signal may now be applied at the
appropriate frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF Input Power
(ii) Turn down and off drain voltage (Vd).
(iii) Turn down and off gate bias voltage(Vg).
RMPA25000 S11, S21, S22 Mag Vs. Frequency
Bias Vd=5V Idq=1200 mA, T=25C
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
22
22.5
23
23.5
24
24.5
25
25.5
26
26.5
27
Frequency (GHz)
S
11,
S
21,
S
22
(
d
B
)
S21
S11
S22
Performance
Data
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised January 11, 2002
Page 5
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
RMPA25000 Gain Vs. Pout
Bias Vd=5V Idq=1200mA T=25C
12
13
14
15
16
17
18
19
20
21
22
15
17
19
21
23
25
27
29
31
33
35
Pout (dBm)
Ga
i
n
(
d
B
)
23.5 GHz
24 GHz
25 GHz
26 GHz
RMPA25000 SS Gain, Psat Vs. Frequency
Bias Vd=5V Idq=1200mA T=25C
14
16
18
20
22
24
26
28
30
32
34
36
23
23.5
24
24.5
25
25.5
26
26.5
Frequency (GHz)
G
a
i
n
(d
B
),
P
s
a
t
(d
Bm
)
Psat
SS Gain
RMPA25000
23.5-26 GHz 2 Watt Power Amplifier MMIC
Performance
Data
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