Raytheon RF Components
362 Lowell Street
Andover, MA 01810
ADVANCED INFORMATION
RMPA39300
37-40 GHz 2 Watt Power Amplifier MMIC
Raytheon
RF Components
www.raytheonrf.com
Specifications are based on most current or latest revision.
Revised April 7, 2003
Page 1
Parameter
Min
Typ
Max Unit
Drain Current
at Pin=0 dBm
2.5
A
Drain Current
at P1 dB Compression
2.8
A
Input Return Loss
(Pin=0 dBm)
9
dB
Output Return Loss
(Pin=0 dBm)
9
dB
Detector Output
(Pout=27 dBm)
0.4
V
Parameter
Min
Typ
Max
Unit
Frequency Range
37
40
GHz
Gate Voltage (Vg)
2
-0.3
V
Gain Small Signal
at Pin=0 dBm
16
dB
Power Output
at 1 dB Compression
33
dBm
Power Saturated
34
dBm
OIP3
(16 dBm Pout/Tone
40
dBm
20 MHz Tone Sep)
Electrical
Characteristics
(At 25C) 50
system,
Vd=+5 V, Quiescent
current (Idq) = 2.5A
Description
!
37 40 GHz Frequency Range
!
16 dB Nominal Small Signal Gain
!
33 dBm Nominal Power Out at 1 dB Compression
!
40 dBm OIP3 @ 16 dBm Pout/Tone
!
Integrated Power Detector
!
RF Input and Output Internally Matched to 50 Ohms
!
0.15
m PHEMT Technology
!
Chip Size 5.05 mm x 3.91 mm
Features
The RMPA39300 is a high efficiency power amplifier designed for use in point to point radio, point to
multi-point communications, and other millimeter wave applications. The RMPA39300 is a three stage
GaAs MMIC amplifier utilizing Raytheon RF Component's advanced 0.15
m gate length power
PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the
required total power output. The on-chip detector provides power sensing capability.
Absolute
Ratings
1
Note:
1.
No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
2.
Typical range of negative gate voltages is 0.9 to to 0.1V to set typical Idq of 2.5 A.
Parameter
Symbol
Value
Unit
Positive DC Voltage (+5 V Typical)
Vd
+ 6
Volts
Negative DC Voltage
Vg
- 2
Volts
Simultaneous (Vd - Vg)
Vdg
+ 8
Volts
Positive DC Current
I
D
4950
mA
RF Input Power (from 50
source)
P
IN
26
dBm
Operating Base plate Temperature
T
C
-30 to +85
C
Storage Temperature Range
T
Stg
-55 to +125
C
Thermal Resistance
R
jc
4.3
C/W
(Channel to Backside)
Parameter
Symbol
Value
Unit
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
ADVANCED INFORMATION
RMPA39300
37-40 GHz 2 Watt Power Amplifier MMIC
Raytheon
RF Components
www.raytheonrf.com
Specifications are based on most current or latest revision.
Revised April 7, 2003
Page 2
Figure 1
Functional Block
Diagram
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and
high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be
machined, finished flat, plated with gold over nickel and should be capable of withstanding 325C for 15
minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid
hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used
as RF and DC Ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent
contamination of bonding surfaces. These are ESD sensitive devices and should be handled with
appropriate precaution including the use of wrist-grounding straps. All die attach and wire/ribbon bond
equipment must be well grounded to prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as
practical allowing for appropriate stress relief.
The RF input and output bonds should be typically
0.012" long corresponding to a typically 2 mils gap between the chip and the substrate material.
Application
Information
Figure 2
Chip Layout and
Bond Pad
Locations
(Chip Size=5.05 mm x
3.91 mm x 50
m.
Back of Chip is RF
and DC Ground)
Dimensions in mm
Note:
For output power level detection, bias both detector and reference diodes. DC voltage difference between detector and reference can be used to
measure output power after calibration. If output power level detection is not desired, do not make connection to detector bond pad.
Drain Supply
Vd1
Drain Supply
Vd2
MMIC Chip
RF OUT
RF IN
Gate Supply
Vg
Ground
(Back of Chip)
Drain Supply
Vd3
Reference Detector Voltage
Vref (not connected to circuit)
Output Power
Detector Voltage Vdet
0.0 0.50 1.01 1.50 1.88
3.07
3.81
3.28
3.914
0.01
0.0
0.36
0.90
1.89
2.38
2.53
2.68
3.16
4.16
4.70
4.95
5.054
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
ADVANCED INFORMATION
RMPA39300
37-40 GHz 2 Watt Power Amplifier MMIC
Raytheon
RF Components
www.raytheonrf.com
Specifications are based on most current or latest revision.
Revised April 7, 2003
Page 3
Figure 3
Recommended
Application
Schematic Circuit
Diagram
Figure 4
Recommended
Assembly and
Bonding Diagram
10,000pF
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
L< 0.015"
(4 Places)
Die-Attach
80Au/20Sn
100pF
Vg
(Negative)
100pF
10,000pF
Vd
(Positive)
100pF
100pF
Note: MMIC has Vg, Vd, Vdet and Vref bias pads accessible on both top and bottom sides. DC bias and voltage detector connections are required
only on one side.
Use 0.003" x 0.0005" gold ribbon or 1 mil gold wire for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Note:
For output power level detection, bias both detector and reference diodes. DC voltage difference between detector and reference (Vdet, Vref) can
be used to measure output power after calibration. If output power level detection is not desired, do not make connection to detector bond pad.
Gate Supply
Vg
Drain Supply
Vd=+5 V
Ground
(Back of Chip)
100pF
L
100pF
10,000pF
L
L
L
L = Bond Wire Inductance
MMIC Chip
RF OUT
RF IN
100pF
L
L
100pF
L
L
Reference Detector
Voltage Vref
R = 50k Ohms
R = 50k Ohms
Detector Bias Voltage
Vdet_bias (typ. -2.5 V)
Reference Detector
Bias Voltage
Vref_bias (typ. -2.5 V)
Detector Voltage
Vdet
L
10,000pF
Reference Detector
Bias Voltage
Reference Detector
Voltage Vref
50K
Detector
Voltage Vdet
Detector
Bias Voltage
50K
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
ADVANCED INFORMATION
RMPA39300
37-40 GHz 2 Watt Power Amplifier MMIC
Raytheon
RF Components
www.raytheonrf.com
Specifications are based on most current or latest revision.
Revised April 7, 2003
Page 4
CAUTION:
LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT
MAY DAMAGE THE AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Recommended
Procedure for
Biasing and
Operation
Step 1:
Turn off RF input power.
Step 2:
Connect the DC supply grounds
to the ground of the chip carrier.
Slowly apply negative gate bias
supply voltage of -1.5 V to Vg.
Step 3:
Slowly apply positive drain bias
supply voltage of +5 V to Vd.
Step 4:
Adjust gate bias voltage to set the
quiescent current of Idq=2.5 A.
Step 5:
After the bias condition is
established, the RF input signal
may now be applied at the
appropriate frequency band.
Step 6:
Follow turn-off sequence of:
(i) Turn off RF input power.
(ii) Turn down and off drain
voltage (Vd).
(iii) Turn down and off gate bias
voltage (Vg).
Performance
Data
RMPA39300 S-Parameters Vs. Frequency
5V 2.5A Vg=-0.27V Fixtured Data
-40
-30
-20
-10
0
10
20
30
30
32
34
36
38
40
42
44
46
48
50
Frequency (GHz)
Sij
(
d
B
)
S11dB
S21dB
S22dB
Corrected for Fixture Losses
S22
S21
S11
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
ADVANCED INFORMATION
RMPA39300
37-40 GHz 2 Watt Power Amplifier MMIC
Raytheon
RF Components
www.raytheonrf.com
Specifications are based on most current or latest revision.
Revised April 7, 2003
Page 5
Performance
Data
RMPA39300 Pout Vs. Gain
5V 2.5A Vg=-0.27V Fixtured Data
11
12
13
14
15
16
17
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
Pout (dBm)
Ga
i
n
(
d
B
)
37 GHz
38 GHz
39 GHz
40 GHz
Corrected for Fixture Losses
RMPA39300 OIP3 Vs. Pout/Tone
5V 2.5A 20 MHz Tone Sep T=25C
30
31
32
33
34
35
36
37
38
39
40
41
42
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
Pout/Tone (dBm)
OIP
3
L
(
d
B
m
)
37 GHz
38 GHz
39 GHz
40 GHz
40.5 GHz
Corrected for Fixture Losses
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