Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
The RMWB04001 is a 2-stage GaAs MMIC amplifier designed as a 3.5 to 4 GHz Buffer Amplifier for use in the LO
chain of millimeter wave point to point radios, point to multi-point communications, LMDS, and similar
applications. In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 23
and 26 GHz transmit/receive chipset. The RMWB04001 utilizes Raytheon's 0.25m power PHEMT process and can
be used in a variety of applications requiring a high gain medium power amplifier.
Absolute
Maximum
Ratings
Description
4 mil substrate
Small-signal gain 27 dB (typ.)
Saturated power out 20 dBm (typ.)
Voltage detector included to monitor Pout
Chip size 2.4 mm x 1.3 mm
Features
Note: 1. Typical range of gate voltage is -1 to -0.4 V to set Idq of 36 mA.
Electrical
Characteristics
(At 25C),50
system, Vd=+4 V,
Quiescent Current
Idq=36 mA
RMWB04001
4 GHz Buffer Amplifier MMIC
Parameter
Min
Typ
Max
Unit
Frequency Range
3.5
4.0
GHz
Gate Supply Voltage (Vg)
1
-0.7
V
Gain (Small Signal at Pin= -12 dBm)
24
27
dB
Gain Variation Vs. Frequency
0.5
dB
Power Output Saturated: (Pin=-2 dBm)
18
20
dBm
Input Return Loss (Pin=-12 dBm)
-14
dB
Output Return Loss (Pin=-12 dBm)
-12
dB
DC detector voltage at Pout=20 dBm
0.5
V
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding
to a typically 2 mil between the chip and the substrate material.
Application
Information
Parameter
Symbol
Value
Unit
Positive DC voltage (+4V Typical)
Vd
+6
Volts
Negative DC voltage
Vg
-2
Volts
Simultaneous (Vd - Vg)
Vdg
8
Volts
Positive DC Current
I
D
168
mA
RF Input Power (from 50
source)
P
IN
+7
dBm
Operating Baseplate Temperature
T
C
-30 to +85
C
Storage Temperature Range
T
stg
-55 to +125
C
Thermal Resistance
R
jc
140
C/W
(Channel to backside)
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Note:Detector delivers > 0.1V DC into 3k
load resistor for >20 dBm output power. If output power level detection is not desired, do not connect
to detector bond pad.
Functional
Block Diagram
RF IN
Drain Supply
Vd1
Drain Supply
Vd2
Output Power
Detector Voltage Vdet
Gate Supply
Vg
Ground
(Back of Chip)
MMIC Chip
RF OUT
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the grounds
of the chip carrier.
Slowly apply negative gate bias supply voltage
of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +4 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=36 mA.
Step 5: After the bias condition is established, RF input
signal may now be applied at the appropriate
frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power
(ii) Turn down and off drain voltage (Vd)
(iii) Turn down and off gate bias voltage (Vg)
Recommended
Procedure
for Biasing and
Operation
0.00
1.14
0.11
2.28
2.40
0.00
1.19
1.30
0.00
0.57
1.32
2.28
2.40
0.00
0.57
1.19
0.57
0.11
0.11
1.30
2.08
Figure 1
Chip Layout and
Bond Pad Locations
Chip Size is 2.40 mm
x 1.30 mm. X 100
m.
Back of chip is RF
and DC ground
Dimensions in mm
RMWB04001
4 GHz Buffer Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
MMIC Chip
RF IN
Gate Supply V
g
Ground
(Back of Chip)
Bond
Wires
100 pF
100 pF
10,000 pF
10,000 pF
Bond
Wires
Drain Supply
V
d
=4 V
100 pF
RF OUT
100 pF
Bond
Wires
3 k
Output Power
Detector Voltage V
det
Figure 2
Recommended
Application
Schematic
Circuit Diagram
Note:Detector delivers > 0.1V DC into 3k
load resistor for >20dBm output power. If output power level detection is not desired, do not connect
to detector bond pad.
Figure 3
Recommended
Assembly Diagram
Note: Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
Die-Attach
80Au/20Sn
Drain Supply
V
d
= 4
Output Power
Detector Voltage V
det
100pF
100pF
3k
10,000pF
Gate Supply V
g
100pF
10,000pF
L< 0.015"
(2 Places)
100pF
RMWB04001
4 GHz Buffer Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
22
23
24
25
26
27
28
3.5
3.6
3.7
3.8
3.9
4
Frequency (GHz)
S
21 (
d
B
)
-30
-25
-20
-15
-10
-5
0
S
11,
S
22 (
d
B
)
S22
S11
S21
0
5
10
15
20
25
30
0
1
2
3
4
5
6
Frequency (GHz)
S
21 (
d
B
)
-30
-25
-20
-15
-10
-5
0
S
11,
S
22 (d
B
)
S22
S11
S21
8
10
12
14
16
18
20
22
-16
-14
-12
-10
-8
-6
-4
-2
Pin (dBm )
Po
u
t
(
d
B
m
)
22
23
24
25
26
27
28
29
Ga
i
n
(
d
B
)
3.5 GHz
4.0 GHz
Performance
Data
Typical Small Signal Performance
On-Wafer Measurements, Vd=4 V, Idq= 36 mA, T=25 C
19.8
19.9
20.0
20.1
20.2
3.5
3.6
3.7
3.8
3.9
4.0
Frequency (GHz)
P3
d
B
(
d
B
m
)
22.0
22.4
22.8
23.2
23.6
G3
d
B
(
d
B
)
G3dB
(T=25 C)
P3dB (T=25
C)
G3dB
(T=75 C)
P3dB (T=75 C)
Power Output and Gain Vs. Power In
50
Fixture Measurements, Vd=4 V, Idq= 36 mA, T=25 C
Power Output and Gain at 3 dB Compression Vs. Frequency and Temperature
50
Fixture Measurements, Vd=4 V, Idq= 36 mA
RMWB04001
4 GHz Buffer Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
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362 Lowell Street
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