Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Description
4 mil substrate
Small-signal gain 21 dB (typ.)
Saturated power out 19 dBm (typ.)
Voltage detector included to monitor Pout
Chip size 2.0 mm x 1.3 mm
Features
The RMWB11001 is a 2-stage GaAs MMIC amplifier designed as a 10.5 to 11.7 GHz Buffer Amplifier for use in the
LO chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave
applications. In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38
GHz transmit/receive chipset. The RMWB11001 utilizes Raytheon's 0.25m power PHEMT process and is
sufficiently versatile to serve in a variety of medium power amplifier applications.
RMWB11001
11 GHz Buffer Amplifier MMIC
Electrical
Characteristics
(At 25C), 50
system, Vd=+4 V,
Quiescent Current
Idq=36 mA
Parameter
Min
Typ
Max
Unit
Frequency Range
10.5
11.7
GHz
Gate Supply Voltage
1
(Vg)
-0.5
V
Gain Small Signal
(Pin=-10 dBm)
18
21
dB
Gain Variation vs. Frequency
0.5
dB
Power Output Saturated:
(Pin=2 dBm)
17
19
dBm
Drain Current at Psat
(Pin=2 dBm)
55
mA
Parameter
Min
Typ
Max
Unit
Power Added Efficiency
(PAE): at Psat
35
%
Input Return Loss
(Pin=-10 dBm)
13
dB
Output Return Loss
(Pin=-10 dBm)
18
dB
Noise Figure
4
dB
Detector Voltage
(Pout=+18 dBm)
0.5
V
Notes:
1.
Typical range of gate voltage is -0.8 to -0.2V to set Idq of 36 mA.
2.
Detector delivers approx. 0.5V DC into 3k
load resistor for >+18 dBm output power. If output power level detection is not
desired, do not make connection to detector bond pad.
Absolute
Maximum
Ratings
Parameter
Symbol
Value
Units
Positive DC voltage (+4 V Typical)
Vd
+6
Volts
Negative DC voltage
Vg
-2
Volts
Simultaneous (Vd - Vg)
Vdg
8
Volts
Positive DC Current
I
D
104
mA
RF Input Power (from 50
source)
P
IN
+8
dBm
Operating Baseplate Temperature
T
C
-30 to +85
C
Storage Temperature Range
T
stg
-55 to +125
C
Thermal Resistance (Channel to Backside)
R
jc
180
C/W
Functional
Block Diagram
2
RF IN
RF OUT
Ground
(Back of Chip)
Drain Supply
Vd2
Drain Supply
Vd1
Output Power
Detector Voltage Vdet
Gate Supply
Vg
MMIC Chip
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
RMWB11001
11 GHz Buffer Amplifier MMIC
Figure 2
Recommended
Application Schematic
Circuit Diagram
Drain Supply
Vd=+4 V
Gate Supply
Vg
Ground
(Back of Chip)
Output Power
Detector Voltage
Vdet
MMIC Chip
RF OUT
RF IN
100pF
100pF
10,000pF
L
L
L
L
100pF
10,000pF
L
L
L
100pF
L = Bond Wire
Inductance
3 k
0.5
0.11
0.577
2.0
1.3
0.0
1.3
0.65
1.828
0.106
0.0
0.0
0.0
0.567
0.720
0.873
0.567
1.145
2.0
0.873
0.720
Note: Detector delivers approx.
0.5V DC into 3k
load resistor for
>+18 dBm output power. If output
power level detection is not
desired, do not make connection to
detector bond pad.
Figure 1
Chip Layout and
Bond Pad Locations
Chip Size is 2.0 mm
x 1.3 mm x 100
m.
Back of chip is RF
and DC ground
Dimensions in mm
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Figure 3
Recommended
Assembly Diagram
RMWB11001
11 GHz Buffer Amplifier MMIC
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high
thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined,
finished flat, plated with gold over nickel and should be capable of withstanding 325C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent
contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate
precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be
well grounded to prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long
corresponding to a typically 2 mil between the chip and the substrate material.
Application
Information
Vd
(Positive)
100pF
10,000pF
100pF
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
L< 0.015"
(4 Places)
Die-Attach
80Au/20Sn
100pF
100pF
Vdet (Positive)
10,000pF
Vg (Negative)
3K
Notes:
Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Detector delivers approx. 0.5V DC into 3 k
load resistor for >+18 dBm output power. If output power level detection is not desired, do not make
connection to detector bond pad.
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the grounds of the
chip carrier.
Slowly apply negative gate bias supply voltage of -1.5
V to Vg.
Step 3: Slowly apply positive drain bias supply voltage of +4
V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent current
of Idq=36 mA.
Step 5: After the bias condition is established, RF input signal
may now be applied at the appropriate frequency
band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
Recommended
Procedure
for Biasing and
Operation
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
RMWB11001
11 GHz Buffer Amplifier MMIC
Performance
Data
0
5
10
15
20
25
9.5
10
10.5
11
11.5
12
Frequency (GHz)
S
21 (d
B
)
-25
-20
-15
-10
-5
0
S
11, S
22 (d
B
)
S21
S22
S11
5
10
15
20
25
-16
-12
-8
-4
0
4
Input Power (dBm)
O
u
tp
u
t
P
o
w
e
r (d
B
m
), G
a
in
(d
B
)
Pout @ 10.5GHz
Gain @ 10.5GHz
Pout @ 11.1GHz
Gain @ 11.1GHz
Pout @ 11.7GHz
Gain @ 11.7GHz
RMWB11001, 11GHz Buffer Amplifier, Typical Performance,
On-Wafer Measurements, Vd=4V, Idq= 36mA
RMWB11001, 11GHz Buffer Amplifier, Typical Performance,
Vd=4V, Idq= 36mA, Chip Bonded into 50 ohm Test Fixture
-60
-50
-40
-30
-20
-10
0
10
20
30
0
5
10
15
20
25
30
35
40
Frequency (GHz)
S
21 (d
B)
-20
-15
-10
-5
0
5
10
S
11,
S
22 (d
B)
S21
S11
S22
S21
S22
S11
RMWB11001, 11GHz Buffer Amplifier, Typical Performance,
Vd=4V, Idq= 36mA, Chip Bonded into 50 ohm Test Fixture
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
RMWB11001
11 GHz Buffer Amplifier MMIC
Performance
Data
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
10.5
10.7
10.9
11.1
11.3
11.5
11.7
Frequency (GHz)
D
e
t
ect
o
r
D
C
V
o
l
t
ag
e (
V
)
,
q
,
p
15
16
17
18
19
10.75
11
11.25
11.5
11.75
12
Frequency (GHz)
O
u
t
put
P
o
w
e
r
at
3dB
C
o
mpr
essi
on (
d
B
m
)
+25C
+75C
RMWB11001, 11GHz Buffer Amplifier, Typical Performance, Vd=4V, Idq= 36mA,
Detector Voltage into 3k ohm load at Pout=+18dBm
RMWB11001, Typical Performance Variation with Temperature,
Vd=4V, Idq= 36mA, Chip Bonded into 50 ohm Test Fixture
q
p
15
16
17
18
19
20
21
10.75
11
11.25
11.5
11.75
12
Frequency (GHz)
G
a
i
n
at
3dB
C
o
m
p
ressi
on (
d
B
)
+25C
+75C
RMWB11001, Typical Performance Variation with Temperature,
Vd=4V, Idq= 36mA, Chip Bonded into 50 ohm Test Fixture
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