Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 2, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Description
Single positive supply operation
4 mil substrate
Noise figure 1.4 dB (typ.)
Small-signal gain 18 dB (typ.)
1dB compressed Pout 14 dBm (typ.)
Chip size 2.0 mm x 1.15 mm
Features
The RMWL05001 is a 2-stage GaAs MMIC amplifier designed as a 4.7 to 5.2 GHz Low Noise Amplifier for use in
point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz
transmit/receive chipset. The RMWL05001 utilizes Raytheon's 0.25m power PHEMT process and is sufficiently
versatile to serve in a variety of low noise amplifier applications.
RMWL05001
5 GHz Low Noise Amplifier MMIC
Electrical
Characteristics
(At 25C),
50
system,
Vd=+4 V
Single Bias Supply
Parameter
Min
Typ Max
Unit
Frequency Range
4.7
5.2
GHz
Noise Figure
1.4
2.3
dB
Gain Small Signal at Pin=-20 dBm
14
18
20
dB
Gain Variation vs. Frequency
1
dB
Gain at 1dB Compression
17
dB
Power Output at 1dB Compression
14
dBm
Parameter
Min
Typ Max Unit
Drain Current at Pin=-20 dBm
50
mA
Input Return Loss (Pin=-15 dBm)
15
dB
Output Return Loss (Pin=-15 dBm)
15
dB
Absolute
Maximum
Ratings
Parameter
Symbol
Value
Units
Positive DC voltage (+4 V Typical)
Vd
+6
Volts
Positive DC current
I
D
113
mA
RF Input Power (from 50
source)
P
IN
+8
dBm
Operating Baseplate Temperature
T
C
-30 to +85
C
Storage Temperature Range
T
stg
-55 to +125
C
Thermal Resistance
R
JC
112
C /W
(Channel to Backside)
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 2, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding
to a typically 2 mil between the chip and the substrate material.
Application
Information
RMWL05001
5 GHz Low Noise Amplifier MMIC
Figure 1
Functional Block
Diagram
RF IN
RF OUT
Drain Supply
Vd
Ground
(Back of chip)
MMIC Chip
RF IN
RF OUT
Ground
(Back of chip)
MMIC Chip
Figure 2
Schematic of
Application Circuit
Amplifier is self-biased.
No gate supply is
required.
Drain Supply
Vd=+4 V
100pF
10,000pF
L
L
L = Bond Wire Inductance
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 2, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
RMWL05001
5 GHz Low Noise Amplifier MMIC
Figure 3
Layout and Bond
Pad Locations
Chip Size is
2.0 mm x 1.15 mm x
100
m. Back of chip is
RF and DC ground
0.0
0.0
0.0
0.0
1.15
1.15
2.0
2.0
0.393
0.706
0.5495
1.048
0.131
1.345
0.393
0.706
0.5495
0.798
1.422
Dimensions in mm
Figure 4
Recommended
Assembly Diagram
10,000pF
100pF
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
L< 0.015"
(4 Places)
Die-Attach
80Au/20Sn
Vd
(Positive)
Notes:
1. Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
2. Amplifier is self-biased so no gate supply is required.
CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2) WHILE CORRESPONDING DRAIN VOLTAGE (Vd) IS PRESENT
CAN DAMAGE THE AMPLIFIER.
The following sequence must be followed to properly test the amplifier.
Test Procedure
for Biasing and
Operation
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the grounds
of the chip carrier.
Step 3: Slowly apply positive drain bias supply voltage
of +4 V to Vd.
Step 4: After the bias condition is established, RF input
signal may now be applied at the appropriate
frequency band.
Step 5: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd).
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 2, 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
RMWL05001
5 GHz Low Noise Amplifier MMIC
Performance
Data
0
2
4
6
8
10
12
14
16
18
20
4.5
4.6
4.7
4.8
4.9
5
5.1
5.2
5.3
5.4
5.5
Frequency (GHz)
S21 M
a
g
(
d
B
)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
S
11
and S
22
Mag (
d
B)
S
21
S
22
S
11
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
4.7
4.75
4.8
4.85
4.9
4.95
5
5.05
5.1
5.15
5.2
Frequency (GHz)
Noi
s
e
Fi
gu
re
(
d
B
)
RMWL05001 5 GHz LNA Typical On-Wafer Measurements.
I
DQ
= 76 mA, V
DD
= 4 V (Self Biased)
RMWL05001 5 GHz LNA Typical On-Wafer Noise Figure Measurements.
I
DQ
= 53 mA, V
DD
= 4 V (Self Biased)
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 2, 2001
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
RMWL05001
5 GHz Low Noise Amplifier MMIC
Performance
Data
0
2
4
6
8
10
12
14
16
18
20
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
Frequency (GHz)
Mag S
21
(d
B)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
Mag S
11
and S
22
(d
B)
S
21
S
11
S
22
12.00
12.40
12.80
13.20
13.60
14.00
14.40
14.80
15.20
15.60
16.00
4.60
4.70
4.80
4.90
5.00
5.10
5.20
5.30
Frequency (GHz)
Ou
tpu
t
P
o
we
r at 1
dB
G
a
i
n
C
o
mpre
s
s
i
on
(
d
B
m
)
RMWL05001 5 GHz LNA Typical On-Wafer Noise Figure Measurements.
I
DQ
= 76 mA, V
DD
= 4 V (Self Biased). 50 Ohm Test Fixture Included
RMWL05001 5 GHz LNA Typical Output Power Measurements.
I
DQ
= 70 mA, V
DD
= 4 V (Self Biased) 50 Ohm Test Fixture Included
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