Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Description
4 mil substrate
Noise figure 2.7 dB (typ.)
Small-signal gain 22 dB (typ.)
1dB compressed Pout 13.5 dBm (typ.)
Chip size 2.9 mm x 1.25 mm
Features
The RMWL38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Low Noise Amplifier for use in
point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz
transmit/receive chipset. The RMWL38001 utilizes Raytheon's 0.25m power PHEMT process and is sufficiently
versatile to serve in a variety of low noise amplifier applications.
RMWL38001
37-40 GHz Low Noise Amplifier MMIC
Electrical
Characteristics
(At 25C),
50
system,
Vd=+4 V,
Quiescent Current
Idq=50 mA
Note:
1. Typical range of negative gate voltage is -0.9 to -0.1 V to set typical Idq of 50 mA.
Absolute
Maximum
Ratings
Parameter
Symbol
Value
Unit
Positive DC voltage (+4 V Typical)
Vd
+6
Volts
Negative DC voltage
Vg
-2
Volts
Simultaneous (Vd - Vg)
Vdg
8
Volts
Positive DC current
I
D
75
mA
RF Input Power (from 50
source)
P
IN
+6
dBm
Operating Baseplate Temperature
T
C
-30 to +85
C
Storage Temperature Range
T
stg
-55 to +125
C
Thermal Resistance
R
JC
169
C/W
(Channel to Backside)
Parameter
Min
Typ
Max
Unit
Frequency Range
37
40
GHz
Gate Supply Voltage (Vg)
1
-0.5
V
Noise Figure
2.7
4.0
dB
Gain Small Signal at
Pin=-20 dBm
22
dB
Gain Variation vs.
Frequency
1.5
dB
Gain at 1dB Compression
21
dB
Power Output at 1dB
Compression
13.5
dBm
Parameter
Min
Typ
Max
Unit
Power Output Saturated
15
dBm
Drain Current at
Pin=-20 dBm
50
mA
Drain Current at
1dB Compression
55
mA
Input Return Loss
(Pin=-15 dBm)
12
dB
Output Return Loss
(Pin=-15 dBm)
13
dB
OIP3
23
dBm
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Figure 1
Functional Block
Diagram
Drain
Supply
Vd1
Drain
Supply
Vd2
Drain
Supply
Vd3
Drain
Supply
Vd4
MMIC Chip
RF OUT
RF IN
Gate Supply
Vg1
Ground
(Back of Chip)
Gate Supply
Vg2
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding
to a typically 2 mil between the chip and the substrate material.
Application
Information
Figure 2
Chip Layout and Bond
Pad Locations
Chip Size is 2.9 mm x
1.25 mm x 100
m.
Back of chip is RF and
DC ground
0.6255
0.0
0.0
0.0
0.0
1.25
1.25
2.9
2.9
0.293
1.476
1.7375
2.013
0.645
0.895
1.895
2.645
0.774
0.6245
0.475
0.775
0.476
Dimensions in mm
RMWL38001
37-40 GHz Low Noise Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Figure 3
Recommended
Application Schematic
Circuit Diagram
Drain Supply
Vd=+4 V
Gate Supply
Vg
Ground
(Back of Chip)
100pF
L
MMIC Chip
RF OUT
RF IN
100pF
10,000pF
L
L
L
100pF
100pF
10,000pF
L
L
L
L
L
L
L = Bond Wire Inductance
100pF
L
L
L
Figure 4
Recommended
Assembly Diagram
10,000pF
100pF
Vg
(Negative)
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
L< 0.015"
(4 Places)
Die-Attach
80Au/20Sn
100pF
100pF
Vdd
(Positive)
100pF
100pF
10,000pF
Note:
Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
RMWL38001
37-40 GHz Low Noise Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Recommended
Procedure
for Biasing and
Operation
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VDS) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the
grounds of the chip carrier.
Slowly apply negative gate bias supply voltage
of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +4 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=50 mA.
Step 5: After the bias condition is established, RF input
signal may now be applied at the appropriate
frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
Performance
Data
RMWL38001, 37-40GHz Low-Noise Amplifier, Typical Performance,
Vd=4V, Idq=50mA, Chip Bonded into 50 ohm Test Fixture
-30
-20
-10
0
10
20
30
0
10
20
30
40
50
Frequency (GHz)
S21 (
d
B
)
S21
S22
S11
RMWL38001
37-40 GHz Low Noise Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14 2001
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Performance
Data
RMWL38001, 37-40GHz Low-Noise Amplifier, Typical Performance,
On-Wafer Measurements, Vd=4V, Idq=50mA
0
1
2
3
4
37
37.5
38
38.5
39
39.5
40
Frequency (GHz)
Noise Figur
e (
d
B)
RMWL38001, 37-40GHz Low-Noise Amplifier, Typical Noise Figure,
Vd=4V, Idq=50mA and 65mA, Chip Bonded into 50 ohm Test Fixture
2
2.5
3
3.5
4
35
36
37
38
39
40
Frequency (GHz)
Noise Figur
e (
d
B)
50mA
65mA
RMWL38001
37-40 GHz Low Noise Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14 2001
Page 6
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Performance
Data
RMWL38001, 37-40GHz Low-Noise Amplifier, Typical Performance,
Vd=4V, Idq=50mA and 65mA, Chip Bonded into 50 ohm Test Fixture
20
21
22
23
24
25
26
35
36
37
38
39
40
Frequency (GHz)
Ga
in (
d
B)
50mA
65mA
RMWL38001, 37-40GHz Low-Noise Amplifier, Typical Power Performance,
On-Wafer Measurements, Vd=4V, Idq=50mA
10
12
14
16
18
20
37
37.5
38
38.5
39
39.5
40
Frequency (GHz)
Out
put
Powe
r
(
d
Bm
)
1dB compressed
3dB compressed
RMWL38001
37-40 GHz Low Noise Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14 2001
Page 7
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
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