Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 1
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
www.raytheonrf.com
Description
4 mil substrate
Conversion loss 7.5 dB (Upconverter)
Conversion loss 8.5 dB (Downconverter)
No DC bias required
Chip size 1.95 mm x 1.5 mm
Features
The RMWM26001 is a 26 GHz Mixer designed to be used in point to point radios, point to multi-point
communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon RF
Components amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz transmit/receive chipset.
The RMWM26001 is a GaAs MMIC diode mixer utilizing Raytheon RF Components' 0.25m power PHEMT process.
The MMIC can be used as both an Upconverter and a Downconverter and is sufficiently versatile to serve in a
variety of mixer applications.
RMWM26001
26 GHz Mixer MMIC
Electrical
Characteristics
(At 25C),
50
system,
LO = +12 dBm
Parameter
Min
Typ
Max
Unit
RF Frequency Range
21
26.5
GHz
LO Frequency Range
17 - 24.1
GHz
IF Frequency Range
(Up-Conv)
4.02 - 4.12
GHz
IF Frequency Range
(Down-Conv)
2.552 - 2.602
GHz
LO Drive Power
12
16
dBm
Up Conversion Loss
7.5
dB
Down Conversion Loss
1
8.5
10
dB
Conversion Loss
Variation vs Freq.
2
dB
Parameter
Min
Typ
Max Unit
RF Port Return Loss
12
dB
LO Port Return Loss
10
dB
IF Port Return Loss
8
dB
LO to RF Isolation
20
dB
LO to IF Isolation
35
dB
Input P1dB at IF Port
(Up-Conv)
8
dBm
Input P1dB at RF Port
(Down-Conv)
9
dBm
Note:
1. Device 100% RF tested as downconverter only. LO drive = +12 dBm, RF Pin = -10 dBm, IF = 2.6 GHz.
Absolute
Ratings
Parameter
Symbol
Value
Units
RF Input Power (from 50
source)
P
IN
+25
dBm
Operating Baseplate Temperature
T
C
-30 to +85
C
Storage Temperature Range
T
stg
-55 to +125
C
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding
to a typical 2 mil gap between the chip and the substrate material.
Application
Information
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 3
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
www.raytheonrf.com
The RMWM26001 does not require DC bias. Apply RF input signal at the appropriate frequency band and input
drive level.
Recommended
Procedure for
Operation
Figure 3
Recommended
Assembly Diagram
LO
Input
RF Input
/Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
L< 0.015"
(6 Places)
Die-Attach
80Au/20Sn
IF Input
/Output
5 mil Thick
Alumina
50-Ohm
Note:
Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
RMWM26001
26 GHz Mixer MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 4
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
www.raytheonrf.com
Performance
Data
RMWM26001 26 GHz Mixer Typical On-Wafer Performance DownConverter
-10
-8
-6
-4
-2
0
21000
21500
22000
22500
23000
23500
24000
24500
25000
25500
26000
26500
RF Input Frequency (GHz)
Con
v
e
r
sion
G
a
in
(dB)
RMWM26001 26 GHz Mixer On-Wafer Performance UpConverter
-10
-8
-6
-4
-2
0
21000
21500
22000
22500
23000
23500
24000
24500
25000
25500
26000
26500
Frequency (GHz)
Con
v
e
r
sion
G
a
in
(dB)
RMWM26001
26 GHz Mixer MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 5
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
www.raytheonrf.com
Performance
Data
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
16.5
17
17.5
18
18.5
19
19.5
20
20.5
21
21.5
22
22.5
23
23.5
24
24.5
LO Frequency (GHz)
L
O
, I
F
an
d R
F
P
o
r
t
R
e
t
u
r
n
L
o
s
s
(dB)
RF Port
LO Port
IF Port
-40
-35
-30
-25
-20
-15
-10
-5
0
16.5
17
17.5
18
18.5
19
19.5
20
20.5
21
21.5
22
22.5
23
23.5
24
24.5
LO Frequency (GHz)
Isol
at
i
o
n (dB)
LO-RF Isolation U/C
LO-IF Isolation D/C
RMWL26001 26 GHz Mixer Typical Isolation Performance
Measurements Include 50 Ohm Test Fixture
RMWL26001 26 GHz Mixer Typical Return Loss Performance
Measurements Include 50 Ohm Test Fixture
RMWM26001
26 GHz Mixer MMIC
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