Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Parameter
Min
Typ
Max
Unit
Frequency Range
37
40
GHz
Gate Supply Voltage
1
(Vg)
-0.5
V
Gain Small Signal at
Pin= -10 dBm
18
22
dB
Gain Variation vs Frequency
4
dB
Gain at 1 dB Compression
21
dB
Power Output at 1 dB
Compression
22
dBm
Power Output Saturated:
Pin=+5 dBm
21
23.5
dBm
Drain Current at
Pin=-10 dBm
250
mA
Drain Current at 1dB
Compression
280
mA
Parameter
Min
Typ
Max
Unit
Drain Current at Saturated:
Pin=+5 dBm
270
mA
Power Added Efficiency
(PAE): at P1dB
15
%
Input Return Loss
(Pin=-10 dBm)
12
dB
Output Return Loss
(Pin=-10 dBm)
7
dB
OIP3
30
dBm
Noise Figure
6
dB
Detector Voltage
(Pout= +15 dBm)
0.15
V
(Bias Current =
0.02-0.05 mA)
Parameter
Symbol
Value
Unit
Positive DC voltage (+4V Typical)
Vd
+6
Volts
Simultaneous (Vd - Vg)
Vdg
8
Volts
Positive DC Current
I
D
483
mA
RF Input Power (from 50
source)
P
IN
+8
dBm
Operating Baseplate Temperature
T
C
-30 to +85
C
Storage Temperature Range
T
stg
-55 to +125
C
Thermal Resistance
R
jc
46
C/W
(Channel to Backside)
The RMWP38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Power Amplifier for use in point to
point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction
with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset.
The RMWP38001 utilizes Raytheon's 0.25m power PHEMT process and is sufficiently versatile to serve in a
variety of power amplifier applications.
Absolute
Maximum
Ratings
Description
4 mil substrate
Small-signal gain 22 dB (typ.)
1dB compressed Pout 22 dBm (typ.)
Chip size 3.4 mm x 1.4 mm
Features
Note:
1. Typical range of gate voltage is -2.0 to 0 V to set Idq of 250 mA.
Electrical
Characteristics
(At 25C),
50
system,
Vd=+4 V,
Quiescent Current
Idq=250 mA
RMWP38001
37-40 GHz Power Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding
to a typically 2 mil between the chip and the substrate material.
Application
Information
Figure 1
Functional Block
Diagram
Drain Supply
Vd1
Drain Supply
Vd2
MMIC Chip
RF OUT
RF IN
Gate Supply
Vg
Ground
(Back of Chip)
Drain Supply
Vd3
Drain Supply
Vd4
Reference Detector Voltage
Vref (not connected to circuit)
Output Power
Detector Voltage Vdet
Note:
For output power level detection, bias both detector and reference diodes. DC voltage difference between detector and reference can be used to
measure output power after calibration. If output power level detection is not desired, do not make connection to detector bond pad.
Dimensions in mm
0.0
1.4
0.8355
0.686
0.5365
0.0
0.0
0.0
3.4
3.4
1.4
0.545
1.05
1.55
3.0375
0.376
0.8315
0.682
0.5325
Figure 2
Chip Layout and Bond
Pad Locations
Chip Size is 3.4 mm x
1.4 mm. Back of chip is
RF and DC ground
RMWP38001
37-40 GHz Power Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Notes:
1. Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
2. If output power level detection is not desired, do not make connection to detector bond pad.
50 K Ohms
10,000pF
100pF
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
L< 0.015"
(2 Places)
Die-Attach
80Au/20Sn
100pF
Vg
(Negative)
100pF
100pF
10,000pF
Vd
(Positive)
Detector Voltage
Vdet
Reference Detector
Bias Voltage Vrefbias
50 K Ohms
Detector Bias Voltage
Vdetbias
Reference Detector
Voltage Vref
Note:
For output power level detection, bias both detector and reference diodes. DC voltage difference between detector and reference can be used to
measure output power after calibration. If output power level detection is not desired, do not make connection to detector bond pad.
Figure 3
Recommended
Application Schematic
Circuit Diagram
Figure 4
Recommended
Assembly Diagram
RMWP38001
37-40 GHz Power Amplifier MMIC
Gate Supply
Vg
Drain Supply
Vd=+4 V
Ground
(Back of Chip)
100pF
L
100pF
10,000pF
L
L
L
L = Bond Wire Inductance
MMIC Chip
RF OUT
RF IN
100pF
L
L
100pF
L
L
100pF
L
L
10,000pF
Reference Detector
Voltage Vref
R = 50 k Ohms
R = 50kOhms
Detector Bias Voltage
VdetBias (typ. -2.5 V)
Reference Detector
Bias Voltage
Vrefbias (typ. -2.5 V)
Detector Voltage
Vdet
L
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the grounds
of the chip carrier.
Slowly apply negative gate bias supply voltage
of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +4 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=250 mA.
Step 5: After the bias condition is established, RF input
signal may now be applied at the appropriate
frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Recommended
Procedure
for Biasing and
Operation
Performance
Data
RMWP38001, 38 GHz Power Amplifier Typical On-Wafer Measurements
I
DQ
= 250 mA V
DD
= 4 V
0
2
4
6
8
10
12
14
16
18
20
22
24
26
35
35.5
36
36.5
37
37.5
38
38.5
39
39.5
40
Frequency (GHz)
S21 M
a
g
(
d
B
)
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
S
11
and S
22
Mag (
d
B)
S
21
S
22
S
11
RMWP38001
37-40 GHz Power Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
RMWP38001 Typical On-Wafer Output Power at 1 dB Gain
Compression Measurements at I
DQ
= 290 mA V
DD
= 4.0
Performance
Data
RMWP38001 38 GHz Power Amplifier. Typical Output IP
3
Performance in 50 Ohm Test Fixture.
I
DQ
= 290 mA, V
DD
= 4V. Tone Spacing = 1 MHz
0
5
10
15
20
25
30
35
40
45
50
36.5
37
37.5
38
38.5
39
39.5
40
40.5
Upper Product Frequency (GHz)
Ou
tpu
t
IP
3
(d
B
m
)
Pout = 10 dBm/Tone
0
5
10
15
20
25
30
37
37.5
38
38.5
39
39.5
40
Frequency (GHz)
O
u
t
p
ut
P
o
w
er
a
t
1
dB
G
a
i
n
C
o
mp
r
e
s
s
i
o
n
(
d
B
m
)
RMWP38001
37-40 GHz Power Amplifier MMIC
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