DISCRETE POWER AND SIGNAL
TECHNOLOGIES
Absolute Maximum Ratings*
TA = 25
O
C unless otherwise noted
Sym
Parameter
Value
Units
T
stg
Storage Temperature
-55 to +150
O
C
T
J
Operating Junction Temperature
+150
O
C
W
iv
Working Inverse Voltage
25
V
I
F
DC Forward Current (I
F
)
200
mA
i
f
Recurrent Peak Forward Current (I
FRM
)
300
mA
i
F(surge)
Peak Forward Surge Current (I
FSM
) Pulse Width = 1.0 Second
600
mA
P
D
Total Power Dissipation at 25
O
C
230
mW
Theta (R
th j-a) (Note 1
)
430
O
K/W
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1) From junction to ambient mounted on a ceramic substrate of 10 mm x 8 mm x 0.6 mm
BAT54/A/C/S
Electrical Characteristics
TA = 25
O
C unless otherwise noted
SYM
CHARACTERISTICS
MIN
MAX
UNITS
TEST CONDITIONS
B
V
Breakdown Voltage
30
V
I
R
= 10 uA
I
R
Reverse Leakage
2.0
uA
V
R
= 25 V
V
F
Forward Voltage
240
mV
I
F
= 100 uA
320
mV
I
F
= 1.0 mA
400
mV
I
F
= 10 mA
500
mV
I
F
= 30 mA
1.0
V
I
F
= 100 mA
C
T
Capacitance
10
pF
V
R
= 1.0 V
f
= 1.0 MHz
T
RR
Reverse Recovery Time
5.0
ns
I
F
= I
R
= 10 mA
I
RR
= 1.0 mA
R
L
= 100 Ohms
L4P
3
1
2
Schottky Barrier Diode
Sourced from Process KA
MARKING
BAT54
L4P
BAT54C L43
BAT54A L42
BAT54S L44
PACKAGE
SOT-23
TO-236AB (Low)
BAT54C
BAT54
BAT54S
BAT54A
CONNECTION DIAGRAMS
3
2
1
3
2
1
3
2
1
3
1
2 NC
1997 Fairchild Semiconductor Corporation
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
SOT-23
TO-236AB (L
OW
P
ROFILE
)
22-August-1994
0.098 (2.489)
0.083 (2.108)
0.055 (1.397)
0.047 (1.194)
0.024 (0.810)
0.018 (0.457)
3 CHARACTERS MAX
LOW PROFILE 0.0040 (0.102)
(49)
0.0005 (0.013)
0.120 (3.048)
0.110 (2.794)
0.040 (1.016)
0.035 (0.889)
0.080 (2.032)
0.070 (1.778)
0.019 (0.483)
0.015 (0.381)
0.0059 (0.150)
0.0035 (0.089)
2
3
1
LOW PROFILE 0.041 (1.041)
(49)
0.035 (0.889)
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