RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Silicon epitaxial planar diode
* Fast switching
* Surface mounting device
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
BAV99
SMALL SIGNAL DIODE
Dimensions in inches and (millimeters)
2001-12
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
* Weight : apporx. 0.008g
SOT-23
MAXIMUM RATINGS (At T
A
= 25
o
C unless otherwise noted)
RATINGS
Repetitive Peak Reverse Voltage
Forward Continuous Current at T
A
=25
o
C
Repetitive Peak Forward Current at T
A
=25
o
C
Junction Temperature
Storage Temperature Range
SYMBOL
V
RRM
I
FRM
I
FSM
T
S T G
I
F
Volts
m A
m A
1000
125
-65 to + 150
0
C
UNITS
Surge Forward Current at tp < 1 S, at T
A
=25
o
C
m A
BAV99
70
500
150
T
J
0
C
Total Power Dissipation
P
D
250
m W
.118
(3.00
)
.006
(0.14
)
.003
(0.08
)
.110
(2.80
)
.102 (2.60)
.028 (0.70)
.020 (0.50)
.055 (1.40)
.047 (1.20)
.045 (1.15)
R0.05
(.002)
.033 (0.85)
.094 (2.40)
.079
(2.00
)
.040
(1.02
)
.017
(0.42
)
.015
(0.38
)
.035
(0.88
)
.071
(1.80
)
(A)
(B)
(A)
(C)
(C)
RECTRON
ELECTRICAL CHARACTERISTICS (At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
V ( B R ) R
SYMBOL
VF(1)
VF(3)
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
I
R
C
T
T r r
VF(2)
Value
Unit
Testing Condition
70
715
855
1000
2.5
1.5
6
V
m V
m V
m V
uA
pF
nS
Ir=100uA
If=1mA
If=10mA
IF=50mA
If=150mA
Vr=70V
Vr=0V,F=1MHZ
If=Ir=10mA,RL=100 ohm, measured at ir=1mA
VF(4)
1250
m V
CHARACTERISTIC CURVES
FIG. 1 - FORWARD CURRENT
FORWARD CURRENT, iF(mA)
FORWARD VOLTAGE,VF (mV )
& FORWARD VOLTAGE
0
400 800
1200
1600
2000
500
400
300
200
100
0
FIG. 2 - DIODE CAPACITANCE
DIODE CAPACITANCE,Cd (pF)
REVERSE VOLTAGE, ( V )
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
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