3. V
F
= 3.0V max. for devices of V(
BR
) < 200V and V
F
= 6.5 Volts max. for devices of V(
BR
) > 200V.
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Plastic package has underwriters laboratory
* Glass passivated chip construction
* 400 watt surage capability at 1ms
* Excellent clamping capability
* Low zener impedance
* Fast response time
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load,
For capacitive load, derate current by 20%.
T V S
P4KE
SERIES
DO-41
400 WATT PEAK POWER 1.0 WATT STEADY STATE
GPP TRANSIENT VOLTAGE SUPPRESSOR
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25
o
C unless otherwise noted)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types P4KE6.8 thru P4KE400
Electrical characteristics apply in both direction
1998-8
Ratings at 25
o
C ambient temperature unless otherwise specified.
NOTES :
2. Mounted on 1.6 X 1.6" ( 40 X 40mm ) per Fig. 5
1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25
o
C per Fig.2.
RATINGS
Steady State Power Dissipation at T
L
= 75
o
C lead lengths,
.375" ( 9.5 mm ) ( Note 2 )
Peak Forward Surge Current, 8.3ms single half sine wave-
superimposed on rated load( JEDEC METHOD ) ( NoteS 3 )
Maximum Instantaneous Forward Current at 25A for
SYMBOL
I
FSM
V
F
T
J
, T
STG
Volts
-65 to + 175
0
C
U N I T S
unidirectional only ( Note 4 )
Amps
Peak Power Dissipation at T
A
= 25
o
C, T
P
= 1mS ( Note 1 )
Minimum 400
40
3.5/6.5
VALUE
Operating and Storage Temperature Range
P
PPM
Watts
P
D
Watts
1.0
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