Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
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Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
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Technology Corporation product best suited to the customer's application; they do not convey any
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contained therein.
2SB647, 2SB647A
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
2SB647
2SB647A
Unit
Collector to base voltage
V
CBO
120
120
V
Collector to emitter voltage
V
CEO
80
100
V
Emitter to base voltage
V
EBO
5
5
V
Collector current
I
C
1
1
A
Collector peak current
i
C(peak)
2
2
A
Collector power dissipation
P
C
0.9
0.9
W
Junction temperature
Tj
150
150
C
Storage temperature
Tstg
55 to +150
55 to +150
C
Electrical Characteristics (Ta = 25C)
2SB647
2SB647A
Item
Symbol Min
Typ
Max
Min
Typ
Max Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
120 --
--
120 --
--
V
I
C
= 10
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
80
--
--
100 --
--
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
--
--
5
--
--
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
--
--
10
--
--
10
A
V
CB
= 100 V, I
E
= 0
DC current transfer ratio
h
FE1
*
1
60
--
320
60
--
200
V
CE
= 5 V,
I
C
= 150 mA*
2
h
FE2
30
--
--
30
--
--
V
CE
= 5 V,
I
C
= 500 mA*
2
Collector to emitter
saturation voltage
V
CE(sat)
--
--
1
--
--
1
V
I
C
= 500 mA,
I
B
= 50 mA*
2
Base to emitter voltage
V
BE
--
--
1.5
--
--
1.5 V
V
CE
= 5 V,
I
C
= 150 mA*
2
Gain bandwidth product
f
T
--
140
--
--
140
--
MHz V
CE
= 5 V, I
C
= 150 mA
Collector output capacitance Cob
--
20
--
--
20
--
pF
V
CB
= 10 V, I
E
= 0
f = 1 MHz
Notes: 1. The 2SB647 and 2SB647A are grouped by h
FE1
as follows.
2. Pulse test
B
C
D
2SB647
60 to 120
100 to 200
160 to 320
2SB647A
60 to 120
100 to 200
--
2SB647, 2SB647A
3
Maximum Collector Dissipation
Curve
1.2
0.8
0.4
0
50
150
100
Ambient Tmperature Ta (
C)
Collector power dissipation P
C
(W)
Typical Output Characteristics
1.0
0.8
0.6
0.4
0.2
0
2
10
6
4
8
I
B
= 0
0.5mA
2
1
5
10
20
30
40
60
80
100
120
Collector current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
P
C
= 0.9 W
Typical Transfer Characteristics
500
200
100
50
20
10
5
2
1
0
0.2
0.4
0.6
0.8
1.0
V
CE
= 5 V
Pulse
Ta = 75
C
25
25
Base to Emitter Voltage V
BE
(V)
Collector current I
C
(mA)
DC Current Transfer Ratio
vs. Collector Current
V
CE
= 5 V
Pulse
Ta = 75
C
600
500
400
300
200
100
0
1
3
30
300
10
Collector Current I
C
(mA)
DC current transfer ratio h
FE
100
1,000
25
25
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