Rev.1.00, Apr.20.2004, page 1 of 10
2SC5998
Silicon NPN Epitaxial
High Frequency Medium Power Amplifier
REJ03G0169-0100Z
Rev.1.00
Apr.20.2004
Features
High Transition Frequency
f
T
= 11 GHz typ.
High gain and Excellent Efficiency
Maximum Available Gain (MAG) = +22 dB typ. at V
CE
= 3.6 V, I
C
= 100 mA, f = 500 MHz
Power Added Efficiency (PAE) = 70% typ. at Pin=+16 dBm, f = 500 MHz
High Collector to Emitter Voltage
V
CEO
= 5 V
Ideal for up to 2GHz applications.
e.g FRS(Family Radio Service) Power Amplifier ,
GMRS (General Mobile Radio Service) Driver Amplifier
Outline
1
2
3
1. Collector
2. Base
3. Emitter
MPAK
Note:
Marking is "YC-".
Absolute Maximum Ratings
(Ta = 25C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
13
V
Collector to emitter voltage
V
CEO
5
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
500
mA
Collector power dissipation
Pc
700
note
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to +150
C
Note: Value on PCB ( FR-4 : 25 x 30 x 1.0mm Double side )
2SC5998
Rev.1.00, Apr.20.2004, page 2 of 10
Electrical Characteristics
(Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
DC current transfer ratio
h
FE
110
150
190
V
CE
= 3 V, I
C
= 100 mA
Collector output capacitance
C
ob
2.0
pF
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Reverse Transfer Capacitance
C
re
0.95
1.5
pF
V
CB
= 3 V, f = 1 MHz,
Emitter grounded
Transition Frequency
f
T
11
GHz
V
CE
= 3.6 V, I
C
= 100 mA, f = 1 GHz
Maximum Available Gain
MAG
22
dB
V
CE
= 3.6 V, I
C
= 100 mA, f = 0.5 GHz
Power Gain
PG
11
13
dB
V
CE
= 3.6 V, I
Cq
= 20 mA,
f = 0.5 GHz, Pin=+16 dBm
1dB Compression Point at output P1dB
28
dBm
V
CE
= 3.6 V, I
Cq
= 20 mA, f = 0.5 GHz
Added Power Efficiency
PAE
70
%
V
CE
= 3.6 V, I
Cq
=20 mA, f = 0.5 GHz
Main Characteristics
500
400
300
200
100
0
0.2
0.4
0.6
0.8
1.0
V
CE
= 3 V
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
Typical Transfer Characteristics
Collector Current I
C
(mA)
DC Current Transfer Ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
Typical Output Characteristics
0
50
100
150
200
Collector Power Dissipation Pc
* (W)
Collector Power Dissipation Curve
Ambient Temperature T
a
(C)
1.0
0.8
0.6
0.4
0.2
*FR 4(25 x 30 x 1mm)
on PCB
500
400
300
200
100
1
2
3
4
5
0
3.0 mA
2.5 mA
2.0 mA
3.5 mA
4.0 mA
1.5 mA
1.0 mA
I
B
= 0.5 mA
100
0
1
10
1000
150
200
50
V
CE
= 3 V
100
2SC5998
Rev.1.00, Apr.20.2004, page 3 of 10
0
12
8
6
4
2
Collector Current I
C
(mA)
T
r
ansition Frequency f
T
(GHz)
Transition Frequency vs.
Collector Current
10
1
10
100
1000
40
30
20
10
0
0.1
1
10
V
CE
= 3.6 V
I
C
= 100 mA
Frequency f (GHz)
S
21
Parameter, Maximum Available Gain,
Maximum Stable Gain vs. Frequency
Gain G (dB)
f = 1 GHz
VCE=3.6V
MAG
MSG
|S
21
|
2
0
5
10
15
20
25
Collector Current I
C
(mA)
Maximum Stable Gain MSG (dB)
Maximum Available Gain MAG (dB)
Maximum Available Gain, Maximum Stable Gain
vs. Collector Current
1
10
100
1000
V
CE
= 3.6 V
f = 0.5GHz
1GHz
2GHz
3GHz
1.5
1.0
0.5
0
1
2
3
5
2.0
Collector to Base Voltage V
CB
(V)
Reverse
T
r
ansfer Capacitance C
re
(pF)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
3.0
1.0
0
1
2
3
5
I
E
= 0
f = 1 MHz
4.0
Collector to Base Voltage V
CB
(V)
Collector Output Capacitance C
ob
(pF)
Collector Output Capacitance vs.
Collector to Base Voltage
2.0
4
4
Emitter grounded
f = 1 MHz
2SC5998
Rev.1.00, Apr.20.2004, page 4 of 10
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
P
in
(dBm)
P
out
(dBm), PG(dB)
V
CE
= 3.6 V
Icq = 20 mA
f = 0.5GHz
P
out
PG
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
P
in
(dBm)
P
out
(dBm), PG(dB)
V
CE
= 4.5 V
Icq = 20 mA
f = 0.5GHz
P
out
PG
0
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
15
20
25
30
Operation Current
Ic o
p
(
A
)
0
20
40
60
80
100
PA
E
(
%
)
Ic op
P
in
(dBm)
PAE
Pin vs. Pout, PG
Operation Current, Power Added Efficiency
0
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
15
20
25
30
Operation Current Ic o
p
(
A
)
0
20
40
60
80
100
PA
E
(
%
)
Ic op
P
in
(dBm)
PAE
Operation Current, Power Added Efficiency
V
CE
= 3.6 V
Icq = 20 mA
f = 0.5GHz
V
CE
= 4.5 V
Icq = 20 mA
f = 0.5GHz
Pin vs. Pout, PG
P
in
(dBm)
-20
-10
0
10
20
30
40
-30
-20
-10
0
10
20
30
P
out
(dBm)
Harmonic Distortion
P
in
(dBm)
-20
-10
0
10
20
30
40
-30
-20
-10
0
10
20
30
P
out
(dBm)
Harmonic Distortion
V
CE
= 3.6 V
Icq = 20 mA
f = 0.5GHz
V
CE
= 4.5V
Icq = 20 mA
f = 0.5GHz
Fund
(1tone)
2nd HD
3rd HD
Fund
(1tone)
2nd HD
3rd HD
2SC5998
Rev.1.00, Apr.20.2004, page 5 of 10
Intermodulation Distortion
P
in
(dBm)
-20
-10
0
10
20
30
40
-30
-20
-10
0
10
20
30
P
out
(dBm)
IMD5
IMD3
V
CE
= 3.6 V
Icq = 20 mA
f = 0.5GHz
f=1MHz
P
in
(dBm)
-20
-10
0
10
20
30
40
-30
-20
-10
0
10
20
30
P
out
(dB
m)
Intermodulation Distortion
IMD5
IMD3
V
CE
= 4.5 V
Icq = 20 mA
f = 0.5GHz
f=1MHz
Fund
(1tone)
Fund
(1tone)
0.5GHz Evaluation Circuit
IN
VCC
VBB
OUT
56 nH
5.1 nH
100 pF
5.1 nH
1 pF
10 pF
20 pF
30 pF
8 pF
1 pF
20 pF
56 nH
100 pF
10
68
1
F
1
F
PDF 
ZIP