Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
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Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
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these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
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contained therein.
2SD2122(L)/(S), 2SD2123(L)/(S)
2
Absolute Maximum Ratings (Ta = 25C)
Ratings
Item
Symbol
2SD2122(L)/(S) 2SD2123(L)/(S) Unit
Collector to base voltage
V
CBO
180
180
V
Collector to emitter voltage
V
CEO
120
160
V
Emitter to base voltage
V
EBO
5
5
V
Collector current
I
C
1.5
1.5
A
Collector peak current
I
C(peak)
3
3
A
Collector power dissipation
P
C
*
1
18
18
W
Junction temperature
Tj
150
150
C
Storage temperature
Tstg
55 to +150
55 to +150
C
Note:
1. Value at T
C
= 25
C.
Electrical Characteristics (Ta = 25C)
2SD2122(L)/(S)
2SD2123(L)/(S)
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
180
--
--
180
--
--
V
I
C
= 1 mA, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
120
--
--
160
--
--
V
I
C
= 10 mA, R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
5
--
--
5
--
--
V
I
E
= 1 mA, I
C
= 0
Collector cutoff current
I
CBO
--
--
10
--
--
10
A
V
CB
= 160 V, I
E
= 0
DC current transfer ratio h
FE1
*
2
60
--
200
60
--
200
A
V
CE
= 5 V, I
C
= 150 mA*
1
h
FE2
30
--
--
30
--
--
V
CE
= 5 V, I
C
= 500 mA*
1
Collector to emitter
saturation voltage
V
CE(sat)
--
--
1
--
--
1
V
I
C
= 500 mA,
I
B
= 50 mA*
1
Base to emitter voltage
V
BE
--
--
1.5
--
--
1.5
V
V
CE
= 5 V, I
C
= 150 mA*
1
Gain bandwidth product f
T
--
180
--
--
180
--
MHz
V
CE
= 5 V, I
C
= 150 mA*
1
Collector output
capacitance
Cob
--
14
--
--
14
--
pF
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Notes: 1. Pulse test
2. The 2SD2122(L)/(S) and 2SD2123(L)/(S) are grouped by h
FE1
as follows.
B
C
60 to 120
100 to 200
2SD2122(L)/(S), 2SD2123(L)/(S)
3
0
Case temperature T
C
(
C)
Collector power dissipation Pc (W)
Maximum Collector Dissipation Curve
50
100
150
10
30
20
0.01
0.03
0.1
0.3
1.0
3.0
10
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
3
10
30
100
300
Area of Safe Operation
I
C
(max)
DC Operation
(T
C
= 25
C)
2SD2123
2SD2122
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
0
Typical Output Characteristics
10
20
30
40
50
0.2
0.6
0.8
1.0
0.4
I
B
= 0
P
C
= 18 W
T
C
= 25
C
1 mA
2
3
4
5
6
7
8
9
10
10
30
100
300
1,000
Collector current I
C
(A)
DC current transfer ratio h
FE
0.03
0.1
0.3
1.0
3.0
DC Current Transfer Ratio
vs. Collector Current
V
CE
= 5 V
Ta = 25
C
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