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Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
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Remember to give due consideration to safety when making your circuit designs, with appropriate
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6AM11
3
Electrical Characteristics (Ta = 25C) (1 Unit)
N channel
P channel
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Drain to source
breakdown voltage
V
(BR)DSS
60
--
--
60
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source
breakdown voltage
V
(BR)GSS
20
--
--
20
--
--
V
I
G
= 100 A, V
DS
= 0
Gate to source leak
current
I
GSS
--
--
10
--
--
10
A
V
GS
= 16 V, V
DS
= 0
Zero gate voltage drain
current
I
DSS
--
--
250
--
--
250
A
V
DS
= 50 V, V
GS
= 0
Gate to source cutoff
voltage
V
GS(off)
1.0
--
2.0
1.0
--
2.0
V
I
D
= 1 mA, V
DS
= 10 V
Static drain to source
on state resistance
R
DS(on)
--
0.13
0.17
--
0.15
0.2
I
D
= 2.5 A,
V
GS
= 10 V*
1
--
0.18
0.24
--
0.20
0.27
I
D
= 2.5 A, V
GS
= 4 V*
1
Forward transfer
admittance
|y
fs
|
2.7
4.5
--
2.7
5.0
--
S
I
D
= 2.5 A,
V
DS
= 10 V*
1
Input capacitance
Ciss
--
400
--
--
900
--
pF
V
DS
= 10 V, V
GS
= 0,
Output capacitance
Coss
--
220
--
--
460
--
pF
f = 1 MHz
Reverse transfer
capacitance
Crss
--
60
--
--
130
--
pF
Turn-on delay time
t
d(on)
--
5
--
--
8
--
ns
I
D
= 2.5 A, V
GS
= 10 V,
Rise time
t
r
--
30
--
--
35
--
ns
R
L
= 12
Turn-off delay time
t
d(off)
--
170
--
--
180
--
ns
Fall time
t
f
--
75
--
--
85
--
ns
Body to drain diode
forward voltage
V
DF
--
1.0
--
--
1.0
--
V
I
F
= 5 A, V
GS
= 0
Body to drain diode
reverse recovery time
t
rr
--
100
--
--
170
--
ns
I
F
= 5 A, V
GS
= 0,
diF/dt = 50 A/s
Note:
1. Pulse Test
Polarity of test conditions for P channel device is reversed.
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