Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Mar.2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR2PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit,
control of household equipment such as TV sets stereo refrigerator washing machine infrared
kotatsu carpet, solenoid drivers, small motor control,
copying machine, electric tool,
other general purpose control applications
BCR2PM
1. Gate open.
OUTLINE DRAWING
Dimensions
in mm
TO-220F
TYPE
NAME
VOLTAGE
CLASS
3.2
0.2
1.3
MAX
0.8
2.54
13.5
MIN
3.6
5.0
1.2
8.5
10.5
MAX
5.2
4.5
17
2.54
2.8
0.5
2.6
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
I
T (RMS)
........................................................................ 2A
V
DRM
....................................................................... 600V
I
RGT
!
, I
RGT
#
....................................................... 10mA
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
--
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360
conduction
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
2
s
W
W
V
A
C
C
g
Ratings
2
10
0.41
1
0.1
6
1
40 ~ +125
40 ~ +125
2.0
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
1
Non-repetitive peak off-state voltage
1
Voltage class
Unit
V
V
MAXIMUM RATINGS
12
600
720
Mar.2002
10
0
2 3
5 7 10
1
4
2
2 3
5 7 10
2
4
4
6
8
10
3
1
5
7
9
0
3.8
0.6
1.4
2.2
3.0
1.0
1.8
2.6
3.4
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
1
T
j
= 25
C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR2PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
2. Measurement using the gate trigger characteristics measurement circuit.
Symbol
I
DRM
V
TM
V
RGT
!
V
RGT
#
I
RGT
!
I
RGT
#
V
GD
R
th (j-a)
Test conditions
T
j
=125
C, V
DRM
applied
T
a
=25
C, I
TM
=1.5A, Instantaneous measurement
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=125
C, V
D
=1/2V
DRM
Junction to ambient, Natural convection
Unit
mA
V
V
V
mA
mA
V
C/ W
Typ.
--
--
--
--
--
--
--
--
@
#
@
#
ELECTRICAL CHARACTERISTICS
Limits
Min.
--
--
--
--
--
--
0.1
--
Max.
0.5
1.6
2.0
2.0
10
10
--
40
PERFORMANCE CURVES
6
6
6V
6V
R
G
R
G
A
V
A
V
TEST PROCEDURE
3
TEST PROCEDURE
2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
2
Gate trigger current
2
Gate non-trigger voltage
Thermal resistance
Mar.2002
NATURAL CONVECTION
NO FINS
PRINT BOARD
t = 1.6mm
SOLDER LAND :
2mm
10
0
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
3
2
10
1
7
5
3
2
7
5
7
5
3
2
10
1
P
GM
= 1W
P
G(AV)
= 0.1W
I
GM
= 1A
I
RGT I,
I
RGT III
V
GM
= 6V
V
GD
= 0.1V
V
GT
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
0
40
80
120
I
RGT I ,
I
RGT III
V
RGT I
V
RGT III
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
0
40
80
120
10
3
10
1
10
3
10
4
10
2
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
1
2 3 5 7
2 3 5 7
10
2
10
5
2 3 5 7
2 3 5 7
NATURAL CONVECTION
NO FINS
PRINT BOARD
t = 1.6mm
SOLDER LAND :
2mm
1.8
1.6
1.2
0.6
0.4
0.2
1.4
1.0
0.8
0
0.2
0.4
0.8
0.6
1.0
1.2
1.4
0
160
120
60
40
20
140
100
80
0
3.2
0
0.4 0.8
1.6
1.2
2.0 2.4 2.8
CURVES APPLY
REGARDLESS OF
CONDUCTION ANGLE
RESISTIVE,
INDUCTIVE LOADS
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT (T
j
= t
C)
GATE TRIGGER CURRENT (T
j
= 25
C)
100 (%)
GATE TRIGGER VOLTAGE
( T
j
= t
C
)
GATE TRIGGER VOLTAGE
( T
j
= 25
C
)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
TRANSIENT THERMAL IMPEDANCE (
C/
W)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (
C)
RMS ON-STATE CURRENT (A)
TYPICAL EXAMPLE
TYPICAL EXAMPLE
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR2PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Mar.2002
140
40
40
60
20 0
20
60 80 100 120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
0
40
80
120
10
1
160
40
0
40
80
120
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
-1
160
100
80
40
20
0
140
40
40
60
20 0
20
60 80
140
100 120
60
120
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
120
0
20
40
60
80
100
140
160
T
j
= 125C
I QUADRANT
III QUADRANT
10
1
10
3
7
5
3
2
10
0
2 3
5 7 10
1
10
2
7
5
3
2
2 3
5 7 10
2
4
4
4
4
I
RGT III
I
RGT I
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT
( T
j
= t
C
)
REPETITIVE PEAK OFF-STATE CURRENT
( T
j
= 25
C
)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
HOLDING CURRENT
( T
j
= t
C
)
HOLDING CURRENT
( T
j
= 25
C
)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
BREAKOVER VOLTAGE
( T
j
= t
C
)
BREAKOVER VOLTAGE
( T
j
= 25
C
)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/s)
100 (%)
BREAKOVER VOLTAGE
( dv/dt = xV/s
)
BREAKOVER VOLTAGE
( dv/dt = 1V/s
)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (s)
100 (%)
GATE TRIGGER CURRENT
( tw
)
GATE TRIGGER CURRENT
( DC
)
TYPICAL EXAMPLE
TYPICAL EXAMPLE
TYPICAL EXAMPLE
TYPICAL EXAMPLE
TYPICAL EXAMPLE
DISTRIBUTION
T
2
+
, G
TYPICAL
EXAMPLE
T
2
, G
TYPICAL
EXAMPLE
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR2PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
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