Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
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third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
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subject to change by Renesas Technology Corporation without notice due to product improvements or
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or system that is used under circumstances in which human life is potentially at stake. Please contact
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contained therein.
BIC703C
Bias Controlled Monolithic IC
VHF/UHF RF Amplifier
ADE-208-985D (Z)
5th. Edition
Mar. 2001
Features
Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.);
To reduce using parts cost & PC board space.
High |yfs| ;
|yfs| = 29 mS typ. ( f = 1kHz)
Low noise;
NF = 1.0 dB typ. (at f = 200 MHz), NF = 1.8 dB typ. (at f = 900 MHz)
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C = 200pF, Rs = 0 conditions.
Provide mini mold package; CMPAK-4 (SOT-343mod)
Outline
CMPAK-4
1. Source
2. Gate1
3. Gate2
4. Drain
1
4
3
2
Notes:
1.
Marking is "CZ".
2.
BIC703C is individual type number of HITACHI BICMIC.
BIC703C
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
6
V
Gate1 to source voltage
V
G1S
+6
0
V
Gate2 to source voltage
V
G2S
+6
0
V
Drain current
I
D
30
mA
Channel power dissipation
Pch
100
mW
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Electrical Characteristics (Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
6
--
--
V
I
D
= 200
A
V
G2S
= 0,V
G1
= open
Gate1 to source breakdown
voltage
V
(BR)G1SS
+6
--
--
V
I
G1
= +1mA, V
G2S
= V
DS
= 0
Gate2 to source breakdown
voltage
V
(BR)G2SS
+6
--
--
V
I
G2
= +10
A, V
G1S
= V
DS
= 0
Gate2 to source cutoff current I
G2SS
--
--
+100
nA
V
G2S
= +5V, V
G1S
= V
DS
= 0
Gate2 to source cutoff voltage V
G2S(off)
0.8
1.1
1.5
V
V
DS
= 5V, I
D
= 100
A
V
G1
= open
Drain current
I
D(op)
12
15
18
mA
V
DS
= 5V , V
G2S
= 4V
V
G1
= open
Forward transfer admittance
|y
fs
|
24
29
34
mS
V
DS
= 5V, I
D
= 15mA
V
G2S
=4V, f = 1kHz
Input capacitance
c
iss
1.6
2.0
2.4
pF
V
DS
= 5V, V
G2S
=4V
Output capacitance
c
oss
0.6
1.0
1.4
pF
V
G1
= open
Reverse transfer capacitance c
rss
--
0.022
0.05
pF
f = 1MHz
Power gain
PG1
23
28
--
dB
V
DS
= 5V, V
G2S
=4V
V
G1
= open
Noise figure
NF1
--
1.0
1.8
dB
f = 200MHz
Power gain
PG2
17
22
--
dB
V
DS
= 5V, V
G2S
=4V
V
G1
= open
Noise figure
NF2
--
1.8
2.4
dB
f = 900MHz
BIC703C
3
Test Circuits
DC Biasing Circuit for Operating Characteristic Items (I
D(op)
, |yfs|, Ciss, Coss, Crss, NF, PG)
Gate 1
Source
Drain
Gate 2
A
I
D
V
G2
V
G1
Open
200 MHz Power Gain, Noise Figure Test Circuit
V
G2
Input(50
)
1000p
36p
1000p
L1
V
D
BICMIC
RFC
Output(50
)
L2
1000p
10p max
1000p
1000p
47k
1SV70
1000p
1000p
1000p
47k
47k
V
T
V
T
Unit: : Resistance (
)
Capacitance (F)
1SV70
L1 :
1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 :
1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC :
1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
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