Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Jan.2000
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
CR05AS
APPLICATION
Solid state relay, strobe flasher, ignitor, hybrid IC
I
T (AV)
........................................................................ 0.5A
V
DRM
..............................................................200V/400V
I
GT
......................................................................... 100
A
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
V
1
DC off-state voltage
V
1
Voltage class
Unit
V
V
V
V
V
MAXIMUM RATINGS
4 (marked "CB")
200
300
160
200
160
8 (marked "CD")
400
500
320
400
320
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
--
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180
conduction, T
a
=57
C
V
2
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
A
2
s
W
W
V
V
A
C
C
mg
Ratings
0.79
0.5
10
0.4
0.1
0.01
6
6
0.1
40 ~ +125
40 ~ +125
48
V
1. With Gate-to-cathode resistance R
GK
=1k
CATHODE
ANODE
GATE
4.4
0.1
1.5
0.1
1.6
0.2
0.4
0.07
0.8 MIN
2.5
0.1
3.9
0.3
0.4
+0.03
0.05
(Back side)
OUTLINE DRAWING
Dimensions
in mm
SOT-89
0.5
0.07
1.5
0.1 1.5
0.1
Jan.2000
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
V
2. Soldering with ceramic plate (25mm
25mm
t0.7).
V
3. If special values of I
GT
are required, choose at least two items from those listed in the table below. (Example: AB, BC)
The above values do not include the current flowing through the 1k
resistance between the gate and cathode.
B
20 ~ 50
Item
I
GT
(
A)
A
1 ~ 30
C
40 ~ 100
ELECTRICAL CHARACTERISTICS
Test conditions
T
j
=125
C, V
RRM
applied
T
j
=125
C, V
DRM
applied, R
GK
=1k
T
a
=25
C, I
TM
=1.5A, instantaneous value
T
a
=25
C, V
D
=6V, I
T
=0.1A
V
4
T
j
=125
C, V
D
=1/2V
DRM
, R
GK
=1k
T
j
=25
C, V
D
=6V, I
T
=0.1A
V
4
T
j
=25
C, V
D
=12V, R
GK
=1k
Junction to ambient
V
2
Unit
mA
mA
V
V
V
A
mA
C/W
Typ.
--
--
--
--
--
--
--
--
Symbol
I
RRM
I
DRM
V
TM
V
GT
V
GD
I
GT
I
H
R
th (j-a)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Limits
Min.
--
--
--
--
0.2
1
--
--
Max.
0.1
0.1
1.9
0.8
--
100
V
3
3
70
3V
DC
I
GS
I
GT
6V
DC
60
V
GT
2
1
TUT
1k
R
GK
A3
A2
V1
A1
SWITCH 1 : I
GT
measurement
SWITCH 2 : V
GT
measurement
(Inner resistance of voltage meter is about 1k
)
V
4. I
GT
, V
GT
measurement circuit.
SWITCH
PERFORMANCE CURVES
10
0
2 3
5 7 10
1
4
2
2 3
5 7 10
2
4
4
6
8
10
3
1
5
7
9
0
5
0
1
4
2
3
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
1
T
a
= 25C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
Jan.2000
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
10
2
10
2
10
0
10
1
10
1
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
10
2
2 3 5 7
2 3 5 7
10
1
10
2
2 3 5 7
2 3 5 7
V
FGM
= 6V
V
GT
= 0.8V
I
GT
= 100A
(T
j
= 25C)
P
GM
= 0.1W
P
G(AV)
= 0.01W
V
GD
= 0.2V
I
FGM
= 0.1A
200
160
140
120
60
80
20
0
160
40 20
20
80
140
120
40
100
180
0
60
40
100
# 1
# 2
I
GT
(25C)
# 1 32A
# 2 9A
TYPICAL EXAMPLE
1.0
0.8
0.7
0.6
0.3
0.4
0.1
0
160
40 20
20
80
140
120
0.2
0.5
0.9
0
60
40
100
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
TYPICAL EXAMPLE
DISTRIBUTION
1.5
0.5
1.0
0
0.8
0
0.2
0.4
0.6 0.7
0.1
0.3
0.5
360
= 30 60 90
180
120
RESISTIVE, INDUCTIVE LOADS
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
GATE TRIGGER VOLTAGE
( V
)
JUNCTION TEMPERATURE (C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
TRANSIENT THERMAL IMPEDANCE (C/
W)
TIME (s)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
GATE CURRENT
(T
j
=
t
C
)
GATE CURRENT
(T
j
=
25
C
)
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
1
2 3
10
3
5 710
2
2 3 5 710
1
2 3 5 7 10
0
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
ALUMINUM BOARD
WITH SOLDERING
25 25 t0.7
See
3
GATE CHARACTERISTICS
60
20
40
60
0
20 40
80 100 120 140
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
TYPICAL EXAMPLE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
GATE TRIGGER CURRENT (T
j
= tC)
GATE TRIGGER CURRENT (T
j
= 25C)
Jan.2000
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
1.5
1.0
0.5
0
0.8
0
0.2
0.4
0.6 0.7
0.1
0.3
0.5
360
RESISTIVE,
INDUCTIVE
LOADS
= 30 60 120
90 180
270
DC
1.5
1.0
0.5
0
0.8
0
0.2
0.4
0.6 0.7
0.1
0.3
0.5
= 30 60 120
90
180
360
RESISTIVE LOADS
160
120
60
40
20
140
100
80
0
160
40
0
40
80
120 140
20
20
60
100
R
GK
= 1k
TYPICAL EXAMPLE
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
BREAKOVER VOLTAGE
( T
j
= t
C
)
BREAKOVER VOLTAGE
( T
j
=
25
C
)
160
120
60
40
20
140
100
80
0
0.8
0
0.2
0.4
0.6
360
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
ALUMINUM BOARD
WITH SOLDERING
25 25 t0.7
= 30
60
120
90
180
160
120
60
40
20
140
100
80
0
0.8
0
0.2
0.4
0.6
360
RESISTIVE
LOADS
NATURAL
CONVECTION
ALUMINUM BOARD
WITH SOLDERING
25 25 t0.7
= 30
60
120
90
180
160
120
60
40
20
140
100
80
0
0.8
0
0.2
0.4
0.6
= 30
120
180
DC
270
60
90
360
RESISTIVE,
INDUCTIVE
LOADS
ALUMINUM BOARD
WITH SOLDERING
25 25 t0.7
NATURAL
CONVECTION
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