Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
MITSUBISHI IGBT
CY20AAJ-8
Nch IGBT for STROBE FLASHER
Sep. 2001
MITSUBISHI IGBT
CY20AAJ-8
Nch IGBT for STROBE FLASHER
CY20AAJ-8
OUTLINE DRAWING
Dimensions in mm
APPLICATION
Strobe flasher for Camera
SOP-8
G V
CES ...............................................................................
400V
G I
CM ...................................................................................
130A
G Drive
voltage
.....................................................................
4V
MAXIMUM RATINGS
(Tc = 25
C)
5.0
0.4
1.27
1.8 MAX.
6.0
4.4
EMITTER
GATE
COLLECTOR
400
6
8
130
40 ~ +150
40 ~ +150
V
GE
= 0V
V
CE
= 0V
V
CE
= 0V, tw = 10s
C
M
= 400
F see figure1
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
V
V
V
A
C
C
V
CES
V
GES
V
GEM
I
CM
T
j
T
stg
Symbol
Parameter
Conditions
Ratings
Unit
MITSUBISHI IGBT
CY20AAJ-8
Nch IGBT for STROBE FLASHER
Sep. 2001
ELECTRICAL CHARACTERISTICS
(Tj = 25
C)
V
(BR) CES
I
CES
I
GES
V
GE (th)
V
A
A
V
450
--
--
--
--
--
--
--
--
10
0.1
1.5
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
I
C
= 1mA, V
GE
= 0V
V
CE
= 400V, V
GE
= 0V
V
GE
=
6V, V
CE
= 0V
V
CE
= 10V, I
C
= 1mA
Figure1. MAXIMUM PULSE COLLECTOR CURRENT
0
40
80
120
160
0
8
2
4
6
C
M
= 400
F
PULSE COLLECTOR CURRENT I
CM
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
APPLICATION EXAMPLE
R
G
V
CE
V
CM
C
M
Vtrig
V
G
IGBT
IXe
+
Vtrig
TRIGGER
SIGNAL
V
G
IGBTE GATE
VOLTAGE
I
XE
Xe TUBE
CURRENT
Recommended operation conditions
Maximum operation conditions
V
CM
= 330V
V
CM
= 350V
I
CP
= 120A
I
CP
= 130A
C
M
= 300
F
C
M
= 400
F
V
GE
= 5V
Notice 1. Gate drive voltage during on-state must be applied to satisfy the rating of maximum pulse collector current.
And peak reverse gate current during turn-off must become less than 0.1A. (In general, when R
G
(off) = 30
, it is satisfied.)
Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.
So please handle carefully not to give static electricity.
Notice 3. The operation life should be endured 5,000 shots under the charge current
(Ixe
130A : full luminescence condition) of main condenser (C
M
= 400
F).
Repetitive period under the full luminescence conditions is over 3 seconds.
Notice 4. Total gate operation time must be applied within 5,000 hours.
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