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Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
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contained therein.
PF08127B
MOS FET Power Amplifier Module
for E-GSM and DCS1800/1900 Triple Band Handy Phone
ADE-208-1606 (Z)
Rev.0
Oct. 2002
Application
Triple band amplifier for
E-GSM (880 MHz to 915 MHz), DCS1800/1900 (1710 MHz to 1785 MHz, 1850 MHz to 1910 MHz).
For 3.5 V & GPRS Class12 operation compatible
Features
All in one including output matching circuit
Simple external circuit
Simple power control
High gain 3stage amplifier : 0 dBm input Typ
Lead less thin & Small package : 8.0
10.0 mm Typ 1.5 mm Max
High efficiency : 55% Typ at 35.0 dBm for E-GSM
47% Typ at 32.5 dBm for DCS1800
47% Typ at 32.0 dBm for DCS1900
Pin Arrangement
1:
2:
3:
4:
5:
6:
7:
8:
G:
Pin
GSM
Vapc
Vdd1
Pout
GSM
Pout
DCS
Vdd2
Vctl
Pin
DCS
GND
RF-Q-8
1 2
3 4
G
5
8 7
6
G
PF08127B
Rev.0, Oct. 2002, page 2 of 14
Absolute Maximum Ratings *
1
(Tc = 25
C)
Item
Symbol
Rating
Unit
Remark
7.0
V
at no-operation
Supply voltage
Vdd
5.0
V
at operation (50
load)
Idd
GSM
3.5
A
Supply current
Idd
DCS
2
A
Vctl voltage
Vctl
4
V
Vapc voltage
Vapc
4
V
Input power
Pin
10
dBm
Operating case temperature *
2
Tc (op)
-
30 to +100
C
Storage temperature
Tstg
-
40 to +100
C
Pout
GSM
5
W
Output power
Pout
DCS
3
W
Notes: 1. The maximum ratings shall be valid over both the E-GSM-band (880 to 915 MHz),
and the DCS1800/1900-band (1710 to 1785 MHz, 1850 to 1910 MHz).
2. These are specified at pulsed operation with pulse width = 1154
sec and duty cycle of 2:8.
Electrical Characteristics for DC
(Tc = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Drain cutoff current
Ids
20
A
Vdd = 4.7 V, Vapc = 0 V,
Vctl = 0.2 V
Vapc control current
Iapc
2.0
mA
Vapc = 2.2 V
Vctl control current
Ictl
2
A
Vctl = 3 V
PF08127B
Rev.0, Oct. 2002, page 3 of 14
Electrical Characteristics for E-GSM band
(Tc = 25
C)
Test conditions unless otherwise noted:
f = 880 to 915 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 2.0 V, Rg = Rl = 50
, Tc = 25C,
Pulse operation with pulse width 1154
s and duty cycle 2:8 shall be used.
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency range
f
880
915
MHz
Band select (GSM active)
Vctl
2.0
2.8
V
Input power
Pin
2
0
2
dBm
Control voltage range
Vapc
0.2
2.2
V
Supply voltage
Vdd
3.1
3.5
4.5
V
Total efficiency
T
47
55
%
2nd harmonic distortion
2nd H.D.
-
15(50)
0(35)
dBm(dBc)
3rd harmonic distortion
3rd H.D.
-
10(45)
0(35)
dBm(dBc)
4th~8th harmonic distortion
4th~8th H.D.
0(35)
dBm(dBc)
Input VSWR
VSWR (in)
1.5
3
Pout
GSM
= 35 dBm,
Vapc = controlled
Output power (1)
Pout (1)
35.0
36.0
dBm
Vapc = 2.2 V
Output power (2)
Pout (2)
33.5
34.5
dBm
Vdd = 3.1 V, Vapc = 2.2 V,
Tc = +85C
Idd at Low power
300
mA
Pout
GSM
= 7 dBm
Isolation
-
48
-
37
dBm
Vapc = 0.2 V
Isolation at
DCS RF-output
when GSM is active
-
25
-
18
dBm
Pout
GSM
= 35 dBm,
Measured at f = 1760 to 1830 MHz
Switching time
t
r
, t
f
1
2
s
Pout
GSM
= 5 to 35 dBm
Stability
No parasitic oscillation
> 36 dBm
Vdd = 3.1 to 4.5 V, Pout
35 dBm,
Vapc
GSM
2.2 V, Rg = 50
,
Output VSWR = 6 : 1 All phase angles
Load VSWR tolerance
No degradation
or
Permanent degradation
Vdd = 3.1 to 4.5 V, Pout
GSM
35 dBm,
Vapc
GSM
2.2 V, Rg = 50
, t
20
sec.,
Output VSWR = 10 : 1 All phase angles
Load VSWR tolerance
at GPRS CLASS 12
operation
No degradation
or
Permanent degradation
Vdd = 3.1 to 4.2 V, Pout
GSM
35 dBm,
Vapc
GSM
2.2 V,
Rg = 50
, t
20
sec., Tc
90C,
Output VSWR = 10 : 1 All phase angles
Slope Pout/Vapc
160
200
dB/V
Pout
GSM
= 5 to 35 dBm
AM output
15
20
%
Pout
GSM
= 5 to 35 dBm,
4% AM modulation at input
50 kHz modulation frequency
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