Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Sep. 2001
450
30
25
75
25
200
55 ~ +150
55 ~ +150
4.8
V
V
A
A
A
W
C
C
g
FS25SM-9A
V
DSS
V
GSS
I
D
I
DM
I
DA
P
D
T
ch
T
stg
--
OUTLINE DRAWING
Dimensions in mm
V
GS
= 0V
V
DS
= 0V
L = 200
H
Typical value
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
TO-3P
MITSUBISHI Nch POWER MOSFET
FS25SM-9A
HIGH-SPEED SWITCHING USE
APPLICATION
SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc.
MAXIMUM RATINGS
(Tc = 25
C)
Parameter
Conditions
Ratings
Unit
15.9MAX.
4.5
1.5
f 3.2
5.0
20.0
19.5MIN.
2
1.0
5.45
4.4
0.6
2.8
5.45
2
4
4
GATE
DRAIN
SOURCE
DRAIN
G 10V DRIVE
G V
DSS ................................................................................
450V
G r
DS (ON) (MAX) ..............................................................
0.16
G I
D .........................................................................................
25A
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS25SM-9A
HIGH-SPEED SWITCHING USE
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
V
V
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
C/W
450
30
--
--
2.5
--
--
15.6
--
--
--
--
--
--
--
--
--
--
--
--
--
3.0
0.13
1.56
26.0
4600
500
100
60
100
630
140
1.5
--
--
--
10
1
3.5
0.16
1.92
--
--
--
--
--
--
--
--
2.0
0.625
I
D
= 1mA, V
GS
= 0V
I
G
=
100A, V
DS
= 0V
V
GS
=
25V, V
DS
= 0V
V
DS
= 450V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 12A, V
GS
= 10V
I
D
= 12A, V
GS
= 10V
I
D
= 12A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 200V, I
D
= 12A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 12A, V
GS
= 0V
Channel to case
ELECTRICAL CHARACTERISTICS
(Tch = 25
C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
PERFORMANCE CURVES
0
50
100
150
200
250
0
200
50
100
150
10
0
7
10
1
5
7
2
3
10
2
5
7
2
3
2
3
10
1
3
5 7
2
10
2
3
5 7
7
2
3
5
2
5
2
3
T
C
= 25
C
Single Pulse
100
s
tw =
10
s
DC
1ms
10ms
0
10
20
30
40
50
0
4
8
12
16
20
V
GS
= 20V,10V,8V,6V
P
D
= 200W
T
C
= 25
C
Pulse Test
5V
0
4
8
12
16
20
0
2
4
6
8
10
V
GS
= 20V,10V,8V
T
C
= 25
C
Pulse Test
5V
4V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(
C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
Sep. 2001
0
4
8
12
16
20
0
4
8
12
16
20
T
C
= 25
C
Pulse Test
I
D
= 40A
25A
12A
0
0.1
0.2
0.3
0.4
0.5
10
1
2
10
0
3
5 7
2
10
1
3
5 7
2
10
2
3
5 7
T
C
= 25
C
Pulse Test
V
GS
= 10V
20V
10
0
3 5 7
10
1
3
2
2
5 7
10
2
3
2
3
2
5 7
10
2
3
5
7
10
3
2
2
2
3
5
7
10
4
2
3
5
7
Ciss
Coss
Tch = 25
C
V
GS
= 0V
f = 1MHz
Crss
0
8
16
24
32
40
0
4
8
12
16
20
T
C
= 25
C
V
DS
= 10V
Pulse Test
10
0
10
2
10
1
2
3
5
7
2
3
5
7
10
0
10
1
2
3
5
7
10
2
2
3
5
7
V
DS
= 10V
Pulse Test
T
C
= 25
C
75
C
125
C
10
0
10
2
10
1
2
3
5
7
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
Tch = 25
C
V
GS
= 10V
V
DD
= 200V
R
GEN
= R
GS
= 50
t
d(off)
t
d(on)
t
f
t
r
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(
)
MITSUBISHI Nch POWER MOSFET
FS25SM-9A
HIGH-SPEED SWITCHING USE
Sep. 2001
0
1.0
2.0
3.0
4.0
5.0
50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
0.4
0.6
0.8
1.0
1.2
1.4
50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
0
4
8
12
16
20
0
80
160
240
320
400
V
DS
= 100V
400V
200V
T
C
h = 25
C
I
D
= 25A
10
1
10
0
2
3
5
7
10
1
2
3
5
7
50
0
50
100
150
V
GS
= 10V
I
D
= 12A
Pulse Test
0
8
16
24
32
40
0
0.8
1.6
2.4
3.2
4.0
V
GS
= 0V
Pulse Test
T
C
= 125
C
75
C
25
C
10
2
10
1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
4
2 3 5 7
2 3 5 7
2 3 5 7
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
10
3
10
2
10
1
P
DM
tw
D
=
T
tw
T
D = 1.0
= 0.5
= 0.2
= 0.1
Single Pulse
= 0.05
= 0.02
= 0.01
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
CHANNEL TEMPERATURE Tch (
C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t
C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (
C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(ch
c)
(
C/
W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25
C)
CHANNEL TEMPERATURE Tch (
C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t
C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25
C)
SOURCE CURRENT I
S
(A)
MITSUBISHI Nch POWER MOSFET
FS25SM-9A
HIGH-SPEED SWITCHING USE
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