Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
MITSUBISHI Nch POWER MOSFET
FY7BCH-02F
HIGH-SPEED SWITCHING USE
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Sep. 2000
3.0
0.275
0.65
1.1
6.4
4.4
SOURCE
GATE
DRAIN
MITSUBISHI Nch POWER MOSFET
FY7BCH-02F
HIGH-SPEED SWITCHING USE
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
FY7BCH-02F
OUTLINE DRAWING
Dimensions in mm
APPLICATION
Li - ion battery protection
TSSOP8
q
2.5V DRIVE
q
V
DSS ..................................................................................
20V
q
r
DS (ON) (MAX) ..............................................................
21m
q
I
D ...........................................................................................
7A
MAXIMUM RATINGS
(Tc = 25
C)
20
10
7
49
7
1.5
6.0
1.6
55 ~ +150
55 ~ +150
0.035
V
GS
= 0V
V
DS
= 0V
L = 10
H
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
V
A
A
A
A
A
W
C
C
g
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
--
Symbol
Parameter
Conditions
Ratings
Unit
MITSUBISHI Nch POWER MOSFET
FY7BCH-02F
HIGH-SPEED SWITCHING USE
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Sep. 2000
ELECTRICAL CHARACTERISTICS
(Tch = 25
C)
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-a)
t
rr
V
V
A
mA
V
m
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
C/W
ns
20
10
--
--
0.5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.9
17
21
0.119
20
1350
--
--
--
--
--
--
0.85
--
50
--
--
10
0.1
1.5
21
30
0.147
--
--
--
--
--
--
--
--
1.1
78.1
--
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
I
D
= 1mA, V
GS
= 0V
I
G
=
100
A, V
DS
= 0V
V
GS
=
10V, V
DS
= 0V
V
DS
= 20V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 7A, V
GS
= 4V
I
D
= 3.5A, V
GS
= 2.5V
I
D
= 7A, V
GS
= 4V
I
D
= 7A, V
DS
= 10V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
V
DD
= 10V, I
D
= 3.5A, V
GS
= 4V, R
GEN
= R
GS
= 50
I
S
= 1.5A, V
GS
= 0V
Channel to ambient
I
S
= 1.5A, dis/dt = 50A/
s
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