Rev.1.00, May.13.2003, page 1 of 11
HAF1008(L), HAF1008(S)
Silicon P Channel MOS FET Series Power Switching
REJ03G0027-0100Z
Rev.1.00
May.13.2003
Description
This FET has the over temperature shutdown capability sensing to the junction temperature. This FET has
the builtin over temperature shutdown circuit in the gate area. And this circuit operation to shutdown
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
Logic level operation (-4 to -6 V Gate drive)
High endurance capability against to the short circuit
Builtin the over temperature shutdown circuit
Latch type shutdown operation (Need 0 voltage recovery)
Outline
D
S
G
Gate resistor
Tempe-
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut-
down
Circuit
1. Gate
2. Drain
(Flange)
3. Source
1
2
3
1
2
3
LDPAK
HAF1008(L), HAF1008(S)
Rev.1.00, May.13.2003, page 2 of 11
Absolute Maximum Ratings
(Ta = 25
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
60
V
Gate to source voltage
V
GSS
16
V
Gate to source voltage
V
GSS
2.5
V
Drain current
I
D
20
A
Drain peak current
I
D
(pulse)
Note1
40
A
Body-drain diode reverse drain
current
I
DR
20
A
Channel dissipation
Pch
Note2
50
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1 %
2. Value at Tc = 25C
Typical Operation Characteristics
(Ta = 25
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
V
IH
3.5
--
--
V
Input voltage
V
IL
--
--
1.2
V
I
IH1
--
--
100
A
Vi = 8 V, V
DS
= 0
I
IH2
--
--
50
A
Vi = 3.5 V, V
DS
= 0
Input current
(Gate non shut down)
I
IL
--
--
1
A
Vi = 1.2 V, V
DS
= 0
I
IH(sd)1
--
0.8
--
mA
Vi = 8 V, V
DS
= 0
Input current
(Gate shut down)
I
IH(sd)2
--
0.35
--
mA
Vi = 3.5 V, V
DS
= 0
Shut down temperature
Tsd
--
175
--
C
Channel temperature
Gate operation voltage
Vop
3.5
--
12
V
HAF1008(L), HAF1008(S)
Rev.1.00, May.13.2003, page 3 of 11
Electrical Characteristics
(Ta = 25
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain current
I
D1
7
--
--
A
V
GS
= 3.5 V, V
DS
= 2 V
Drain current
I
D2
--
--
10
mA
V
GS
= 1.2 V, V
DS
= 2 V
Drain to source breakdown
voltage
V
(BR)DSS
60
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
16
--
--
V
I
G
= 800 A, V
DS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
2.5
--
--
V
I
G
= 100 A, V
DS
= 0
I
GSS1
--
--
100
A
V
GS
= 8 V, V
DS
= 0
I
GSS2
--
--
50
A
V
GS
= 3.5 V, V
DS
= 0
I
GSS3
--
--
1
A
V
GS
= 1.2 V, V
DS
= 0
Gate to source leak current
I
GSS4
--
--
100
A
V
GS
= 2.4 V, V
DS
= 0
I
GS(OP)1
--
0.8
--
mA
V
GS
= 8 V, V
DS
= 0
Input current (shut down)
I
GS(OP)2
--
0.35
--
mA
V
GS
= 3.5 V, V
DS
= 0
Zero gate voltage drain
current
I
DSS
--
--
10
A
V
DS
= 60 V, V
GS
= 0
Gate to source cutoff voltage V
GS(off)
1.1
--
2.15
V
V
DS
= 10 V, I
D
= 1 mA
Forward transfer admittance |y
fs
|
10
18.5
--
S
I
D
= 10 A, V
DS
= 10 V
Note3
R
DS(on)
--
60
80
m
I
D
= 10 A, V
GS
= 4 V
Note3
Static drain to source on state
resistance
R
DS(on)
--
42
54
m
I
D
= 10 A, V
GS
= 10 V
Note3
Output capacitance
Coss
--
865
pF
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
Turn-on delay time
td(on)
--
5.7
s
Rise time
tr
--
26
--
s
Turn-off delay time
td(off)
--
6.5
s
Fall time
tf
--
9
--
s
V
GS
= -10 V, I
D
= 10 A, R
L
= 3
Bodydrain diode forward
voltage
V
DF
--
-0.9
--
V
I
F
= 20 A, V
GS
= 0
Bodydrain diode reverse
recovery time
trr
--
100
--
ns
I
F
= 20 A, V
GS
= 0
diF/dt = 50A/s
t
os1
--
1.84
--
ms
V
GS
= 5 V, V
DD
= 16 V
Over load shut down
operation time
Note4
t
os2
--
1
--
ms
V
GS
= 5 V, V
DD
= 24 V
Notes: 3. Pulse test
4. Include the time shift based on increasing of channel temperature when operate under over load
condition.
HAF1008(L), HAF1008(S)
Rev.1.00, May.13.2003, page 4 of 11
Main Characteristics
-500
-100
-200
-20
-50
-10
-2
-5
-1
-0.5
-0.3
-0.5
-1
-2
-5
-10 -20
-50 -100
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Drain Current I
D
(A)
Drain Current I
D
(A)
Maximum Safe Operation Area
-50
-40
-30
-20
-10
0
-2
-4
-6
-8
-10
-10 V
V = -3.5 V
GS
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
0
-1
-2
-3
-4
-5
Tc = -25
C
25
C
75
C
Gate to Source Voltage V
GS
(V)
Typical Transfer Characteristics
100
s
1 ms
PW = 10 ms
DC Operation (Tc = 25
C)
Ta = 25
C
-20
-16
-12
-8
-4
-8 V
-6 V
-5 V
-4 V
Pulse Test
V = -10 V
DS
Pulse Test
80
60
40
20
0
50
100
150
200
Channel Dissipation Pch (W)
Case Temperature Tc (
C)
Power vs. Temperature Derating
Thermal shut down
operation area
Operation
in this area
is limited by R
DS(on)
HAF1008(L), HAF1008(S)
Rev.1.00, May.13.2003, page 5 of 11
-1
-0.8
-0.6
-0.4
-0.2
0
-2
-4
-6
-8
-10
Pulse Test
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
-0.1 -0.2
-0.5 -1
-2
-5
-10 -20
200
100
20
50
10
Drain Current I
D
(A)
Drain to Source On State Resistance
V
DS(on)
(m
)
Static Drain to Source Sate Resistance
vs. Drain Current
100
80
60
40
20
-25
0
25
50
75
100 125 150
0
Pulse Test
Case Temperature Tc (
C)
Drain to Source On State Resistance
R
DS(on)
(m
)
Static Drain to Source on State Resistance
vs. Temperature
20
50
10
2
1
5
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
-5 A
I = -10 A
D
-50
V = -4 V
GS
-10 V
I = -10 A
D
-5 A
-10 A
-0.1 -0.2
-0.5 -1
-2
-5
-10 -20
-50
0.5
Tc = -25
C
25
C
75
C
DS
V = -10 V
Pulse Test
V = -4 V
GS
-10 V
Pulse Test
-5 A
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