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Электронный компонент: HAT1047RJ

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Rev.5.00, Aug.27.2003, page 1 of 9
HAT1047R, HAT1047RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
REJ03G0074-0500Z
(Previous ADE-208-1545D(Z))
Rev.5.00
Aug.27.2003
Features
For Automotive Application (at Type Code "J")
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Outline
SOP-8
1 2
3
4
5
6
7
8
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
G
D
S S S
D D D
4
1 2
3
5 6
7 8
HAT1047R, HAT1047RJ
Rev.5.00, Aug.27.2003, page 2 of 9
Absolute Maximum Ratings
(Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
14
A
Drain peak current
I
D(pulse)
Note1
112
A
Body-drain diode reverse drain current I
DR
14
A
Avalanche current HAT1047R
I
AP
Note3
--
--
HAT1047RJ
14
A
Avalanche energy HAT1047R
E
AR
Note3
--
--
HAT1047RJ
19.6
mJ
Channel dissipation
Pch
Note2
2.5
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
3. Value at Tch = 25C, Rg
50
HAT1047R, HAT1047RJ
Rev.5.00, Aug.27.2003, page 3 of 9
Electrical Characteristics
(Ta = 25C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
30
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown voltage V
(BR)GSS
20
--
--
mV
I
G
= 100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
= 16V, V
DS
= 0
Zero gate voltage drain current
I
DSS
--
--
1
A
V
DS
= 30 V, V
GS
= 0
Zero gate voltage
HAT1047R
I
DSS
--
--
--
A
V
DS
= 24 V, V
GS
= 0
drain current
HAT1047RJ I
DSS
--
--
20
A
Ta = 125C
Gate to source cutoff voltage
V
GS(off)
1.0
--
2.5
V
V
DS
= 10 V,
I
D
= 1 mA
Static drain to source on state
R
DS(on)
--
10
12
m
I
D
= 7 A, V
GS
= 10 V
Note4
resistance
R
DS(on)
--
19
25
m
I
D
= 7 A, V
GS
= 4.5 V
Note4
Forward transfer admittance
|y
fs
|
9.6
16
--
S
I
D
= 7 A, V
DS
= 10 V
Note4
Input capacitance
Ciss
--
3500
--
pF
V
DS
= 10 V
Output capacitance
Coss
--
750
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
520
--
pF
f = 1 MHz
Total gate charge
Qg
--
64
--
nc
V
DD
= 10 V
Gate to source charge
Qgs
--
10
--
nc
V
GS
= 10 V
Gate to drain charge
Qgd
--
12
--
nc
I
D
= 14 A
Turn-on delay time
t
d(on)
--
23
--
ns
V
GS
= 10 V, I
D
= 7A
Rise time
t
r
--
45
--
ns
V
DD
10 V
Turn-off delay time
t
d(off)
--
80
--
ns
R
L
= 1.43
Fall time
t
f
--
25
--
ns
R
L
= 4.7
Bodydrain diode forward voltage
V
DF
--
0.82
1.07
V
IF = 14 A, V
GS
= 0
Note4
Bodydrain diode reverse
recovery time
t
rr
--
45
--
ns
IF = 14 A, V
GS
= 0
diF/ dt = 100 A/
s
Notes: 4. Pulse test
HAT1047R, HAT1047RJ
Rev.5.00, Aug.27.2003, page 4 of 9
Main Characteristics
4.0
3.0
2.0
0
50
100
150
200
-50
-40
-30
-20
-10
0
-2
-4
-6
-8
-10
Channel Dissipation Pch (W)
Ambient Temperature Ta (
C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
Drain Current I (A)
D
Typical Transfer Characteristics
1.0
V = -2 V
GS
-4 V
-8 V
-50
-40
-30
-20
-10
0
-1
-2
-3
-4
-5
Tc = -25
C
25
C
75
C
V = -10 V
Pulse Test
DS
Pulse Test
Note 1:
When using the glass epoxy board.
( FR4 40 x 40 x 1.6 mm)
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW
10s)
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
-100
-10
-1
-0.1
-0.01
-0.1
-0.3
-1
-3
-10
-30
-100
-500
Ta = 25
C
1 shot Pulse
PW = 10 ms
10
s
100
s
Operation in
this area is
limited by R
DS(on)
Note 1
DC Operation
(PW
10 s)
1 ms
-3 V
-10 V
GS
HAT1047R, HAT1047RJ
Rev.5.00, Aug.27.2003, page 5 of 9
0
-4
-8
-12
-16
-20
40
32
24
16
8
-40
0
40
80
120
160
0
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (mV)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R (m )
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
C)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
V = -4.5 V
GS
-10 V
Pulse Test
R (m )
DS(on)
-200
-160
-120
-80
-40
Pulse Test
I = -10 A
D
-2 A
-5 A
-1
-20
-100
-2
100
2
5
1.0
-10
-200
20
10
V = -10 V
GS
-4.5 V
Pulse Test
I = -2,-5 A
D
-10 A
50
-50
-5
-2, -5, -10 A
0.1
1.0
10
100
500
100
200
20
50
10
2
5
1.0
0.5
Tc = 25
C
75
C
25
C
V = -10 V
Pulse Test
DS
|yfs| (S)
Drain Current I (A)
D
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance