Rev.4.00, Oct.29.2003, page 1 of 9
HAT2172H
Silicon N Channel Power MOS FET
Power Switching
REJ03G0132-0400Z
Rev.4.00
Oct.29.2003
Features
High speed switching
Capable of 7 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 5.8 m
typ. (at V
GS
= 10 V)
Outline
LFPAK
1 2
3
4
5
1, 2, 3 Source
4 Gate
5 Drain
G
D
S S S
4
1 2
3
5
HAT2172H
Rev.4.00, Oct.29.2003, page 2 of 9
Absolute Maximum Ratings
(Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
40
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
30
A
Drain peak current
I
D(pulse)
Note1
120
A
Body-drain diode reverse drain current I
DR
30
A
Avalanche current
I
AP
Note 2
20
A
Avalanche energy
E
AR
Note 2
32
mJ
Channel dissipation
Pch
Note3
20
W
Channel to Case Thermal Resistance
ch-C
6.25
C/W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25
C
HAT2172H
Rev.4.00, Oct.29.2003, page 3 of 9
Electrical Characteristics
(Ta = 25C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
40
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown voltage V
(BR)GSS
20
--
--
V
I
G
= 100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
= 16 V, V
DS
= 0
Zero gate voltage drain current
I
DSS
--
--
1
A
V
DS
= 40 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.5
--
3.0
V
V
DS
= 10 V,
I
D
= 1 mA
Static drain to source on state
R
DS(on)
--
5.8
7.5
m
I
D
= 15 A, V
GS
= 10 V
Note4
resistance
R
DS(on)
--
6.6
9.2
m
I
D
= 15 A, V
GS
= 7 V
Note4
Forward transfer admittance
|y
fs
|
27
45
--
S
I
D
= 15 A, V
DS
= 10 V
Note4
Input capacitance
Ciss
--
2420
--
pF
V
DS
= 10 V
Output capacitance
Coss
--
480
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
150
--
pF
f = 1 MHz
Gate Resistance
Rg
--
0.5
--
Total gate charge
Qg
--
32
--
nc
V
DD
= 10 V
Gate to source charge
Qgs
--
9
--
nc
V
GS
= 10 V
Gate to drain charge
Qgd
--
4.0
--
nc
I
D
= 30 A
Turn-on delay time
t
d(on)
--
12
--
ns
V
GS
= 10 V, I
D
= 15 A
Rise time
t
r
--
20
--
ns
V
DD
10 V
Turn-off delay time
t
d(off)
--
38
--
ns
R
L
= 0.67
Fall time
t
f
--
4.5
--
ns
Rg = 4.7
Bodydrain diode forward voltage V
DF
--
0.84
1.10
V
IF = 30 A, V
GS
= 0
Note4
Bodydrain diode reverse
recovery time
t
rr
--
32
--
ns
IF = 30 A, V
GS
= 0
diF/ dt = 100 A/ s
Notes: 4. Pulse test
HAT2172H
Rev.4.00, Oct.29.2003, page 4 of 9
Main Characteristics
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
50
40
30
20
10
0
2
4
6
8
10
50
40
30
20
10
0
2
4
6
8
10
Tc = 75
C
25
C
25
C
100
10
1
0.1
0.01
0.1
0.3
1
3
10
30
100
V
DS
= 10 V
Pulse Test
500
Ta = 25
C
1 shot Pulse
PW = 10 ms
10
s
100
s
Operation in
this area is
limited by R
DS(on)
DC Operation
Tc = 25
C
1 ms
V
GS
= 3.0 V
10 V
4.4 V
Pulse Test
3.8 V
3.6 V
3.4 V
4.0 V
Channel Dissipation Pch (W)
Case Temperature Tc (
C)
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
HAT2172H
Rev.4.00, Oct.29.2003, page 5 of 9
Gate to Source Voltage V
GS
(V)
Drain to Source Voltage V
DS(on)
(mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current I
D
(A)
Drain to Source On State Resistance
R
DS(on)
(m
)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
C)
Drain to Source On State Resistance
R
DS(on)
(m
)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
100
10
2
5
20
50
1
3
30
20
15
10
5
25
0
25
50
75
100 125 150
0
1
10
100
1000
0.3
V
GS
= 7 V
10 V
Pulse Test
I
D
= 20 A
5 A, 10 A, 20 A
V
GS
= 7 V
10 V
Pulse Test
3
30
0.1
1
10
100
0.3
10
100
30
1
0.3
3
0.1
Tc = 25
C
V
DS
= 10 V
Pulse Test
75
C
25
C
200
150
100
50
0
4
8
12
16
20
Pulse Test
I
D
= 20 A
10 A
5 A
5 A, 10 A
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