Rev.1.00, May.06.2003, page 1 of 10
HAT2173H
Silicon N Channel Power MOS FET Power Switching
REJ03G0030-0100Z
Rev.1.00
May.06.2003
Features
Capable of 8V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 12 m
typ. (at V
GS
= 10 V)
Outline
LFPAK
1 2
3
4
5
1, 2, 3 Source
4 Gate
5 Drain
G
D
S S S
4
1 2
3
5
HAT2173H
Rev.1.00, May.06.2003, page 2 of 10
Absolute Maximum Ratings
(Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
100
V
Gate to source voltage
V
GSS
20
V
Drain current
I
D
25
A
Drain peak current
I
D(pulse)
Note1
100
A
Body-drain diode reverse drain current I
DR
25
A
Avalanche current
I
AP
Note 2
25
A
Avalanche energy
E
AR
Note 2
62.5
mJ
Channel dissipation
Pch
Note3
30
W
Channel to Case Thermal Resistance
ch-C
4.17
C/W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
HAT2173H
Rev.1.00, May.06.2003, page 3 of 10
Electrical Characteristics
(Ta = 25C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown voltage V
(BR)GSS
20
--
--
V
I
G
= 100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
= 16 V, V
DS
= 0
Zero gate voltage drain current
I
DSS
--
--
1
A
V
DS
= 100 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
4.0
--
6.0
V
V
DS
= 10 V, I
D
= 20 mA
R
DS(on)
--
12
15
m
I
D
= 12.5 A, V
GS
= 10 V
Note4
Static drain to source on state
resistance
R
DS(on)
--
13
17.5
m
I
D
= 12.5 A, V
GS
= 8 V
Note4
Forward transfer admittance
|y
fs
|
27
45
--
S
I
D
= 12.5 A, V
DS
= 10 V
Note4
Input capacitance
Ciss
--
4350
--
pF
Output capacitance
Coss
--
520
--
pF
Reverse transfer capacitance
Crss
--
150
--
pF
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Gate resistance
Rg
--
0.5
--
Total gate charge
Qg
--
61
--
nc
Gate to source charge
Qgs
--
23
--
nc
Gate to drain charge
Qgd
--
14.5
--
nc
V
DD
= 50 V
V
GS
= 10 V
I
D
= 25 A
Turn-on delay time
t
d(on)
--
20
--
ns
Rise time
t
r
--
15
--
ns
Turn-off delay time
t
d(off)
--
37
--
ns
Fall time
t
f
--
5.7
--
ns
V
GS
= 10 V, I
D
= 12.5 A
V
DD
30 V
R
L
= 2.4
Rg = 4.7
Bodydrain diode forward voltage V
DF
--
0.82
1.07
V
IF = 25 A, V
GS
= 0
Note4
Bodydrain diode reverse
recovery time
t
rr
--
55
--
ns
IF = 25 A, V
GS
= 0
diF/ dt = 100 A/ s
Notes: 4. Pulse test
HAT2173H
Rev.1.00, May.06.2003, page 4 of 10
Main Characteristics
Channel Dissipation Pch (W)
Case Temperature Tc (
C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
50
40
30
20
10
0
2
4
6
8
10
50
40
30
20
10
0
2
4
6
8
10
Tc = 75
C
25
C
-25
C
40
30
20
10
0
50
100
150
200
V = 10 V
Pulse Test
DS
V = 5.0 V
GS
10 V
8 V
5.2 V
5.4 V
5.6 V
5.8 V
6.2 V
6.0 V
Pulse Test
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
100
10
1
0.1
0.01
0.1 0.3
1
3
10
30
500
100
500
Tc = 25
C
1 shot Pulse
PW = 1
0 ms
10
s
100
s
Operation in
this area is
limited by R
DS(on)
DC Operatio
n
1 ms
HAT2173H
Rev.1.00, May.06.2003, page 5 of 10
Gate to Source Voltage V (V)
GS
Drain to Source Voltage V (mV)
DS(on)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Forward Transfer Admittance |yfs| (S)
Drain Current I (A)
D
Forward Transfer Admittance vs.
Drain Current
500
400
300
200
100
0
4
8
12
16
20
Pulse Test
I = 50 A
D
10 A
20 A
3
30
0.1
1
10
100
0.3
10
1000
100
30
300
1
0.3
3
0.1
Tc = -25
C
DS
V = 10 V
Pulse Test
75
C
25
C
Drain Current I (A)
D
Drain to Source On State Resistance
R (m )
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
100
10
2
5
20
50
1
30
1
10
100
3
V
GS
= 8 V
10 V
Pulse Test
Case Temperature Tc (
C)
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
vs. Temperature
50
40
30
20
10
-25
0
25
50
75
100 125 150
0
R (m )
DS(on)
I
D
= 5 A, 10 A, 20 A
5 A, 10 A, 20 A
V
GS
= 8 V
10 V
Pulse Test
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