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Электронный компонент: HB28B064C8HSR

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Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Renesas Technology
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
HB28B512C8HSR/HB28B256C8HSR
HB28B192C8HSR/HB28B128C8HSR
HB28B064C8HSR
Wide Temperature Range Version
CompactFlashTM
512 MByte/256 MByte/192 MByte
128 MByte/64 MByte
ADE-203-1375A (Z)
Rev. 1.0
Nov. 20, 2002
Description
HB28B512C8HSR, HB28B256C8HSR, HB28B192C8HSR, HB28B128C8HSR, HB28B064C8HSR are
CompactFlashTM. This card complies with CompactFlashTM specification, and is suitable for the usage of data
storage memory medium for PC or any other electric equipment and digital still camera. This card is
equipped with 0.18
m CMOS 512 Mega bit Flash memory. This card is suitable for ISA (Industry Standard
Architecture) bus interface standard, and read/write unit is 1 sector (512 bytes) sequential access. By using
this card it is possible to operate good performance for the system which have CompactFlash
TM
slots.
Note: CompactFlashTM is a trademark of SanDisk Corporation and is licensed royalty-free to the CFA which
in turn will license it royalty-free to CFA members.
*CFA: CompactFlashTM Association.
Features
CompactFlashTM specification standard
50 pin two pieces connector and Type I (3.3 mm)
3.3V / 5V single power supply operation
Card density is 512 Mega bytes maximum
This card is equipped with 0.18
m CMOS 512 Mega bit Flash memory
HB28B512/256/192/128/064C8HSR
2
3 variations of mode access
Memory card mode
I/O card mode
True IDE mode
Internal self-diagnostic program operates at V
CC
power on
High reliability based on internal ECC (Error Correcting Code) function
Auto sleep mode
Temperature range:
-
25 to
+
85
C
Data write is 300,000 cycles/block.*
1
Note: 1. One block consists of four sectors (512 byte
4).
Card Line Up*
1
Type No.
Card density
Capacity*
4
Total sectors/
card*
3
Sectors/
track*
2
Number of
head
Number of
cylinder
HB28B512C8HSR 512 MB
512,483,328 byte
1,000,944
63
16
993
HB28B256C8HSR 256 MB
256,204,800 byte
500,400
48
15
695
HB28B192C8HSR 192 MB
192,184,320 byte
375,360
32
15
782
HB28B128C8HSR 128 MB
128,188,416 byte
250,368
32
8
978
HB28B064C8HSR 64 MB
64,094,208 byte
125,184
32
4
978
Notes: 1. These data are written in ID.
2. Total tracks = number of head
number of cylinder.
3. Total sectors/card = sectors/track
number of head
number of cylinder.
4. It is the logical address capacity including the area which is used for file system.
HB28B512/256/192/128/064C8HSR
3
Card Pin Assignment
Memory card mode
I/O card mode
True IDE mode
Pin No.
Signal name
I/O
Signal name
I/O
Signal name
I/O
1
GND
--
GND
--
GND
--
2
D3
I/O
D3
I/O
D3
I/O
3
D4
I/O
D4
I/O
D4
I/O
4
D5
I/O
D5
I/O
D5
I/O
5
D6
I/O
D6
I/O
D6
I/O
6
D7
I/O
D7
I/O
D7
I/O
7
-CE1
I
-CE1
I
-CE1
I
8
A10
I
A10
I
A10
I
9
-OE
I
-OE
I
-ATASEL
I
10
A9
I
A9
I
A9
I
11
A8
I
A8
I
A8
I
12
A7
I
A7
I
A7
I
13
VCC
--
VCC
--
VCC
--
14
A6
I
A6
I
A6
I
15
A5
I
A5
I
A5
I
16
A4
I
A4
I
A4
I
17
A3
I
A3
I
A3
I
18
A2
I
A2
I
A2
I
19
A1
I
A1
I
A1
I
20
A0
I
A0
I
A0
I
21
D0
I/O
D0
I/O
D0
I/O
22
D1
I/O
D1
I/O
D1
I/O
23
D2
I/O
D2
I/O
D2
I/O
24
WP
O
-IOIS16
O
-IOIS16
O
25
-CD2
O
-CD2
O
-CD2
O
26
-CD1
O
-CD1
O
-CD1
O
27
D11
I/O
D11
I/O
D11
I/O
28
D12
I/O
D12
I/O
D12
I/O
29
D13
I/O
D13
I/O
D13
I/O
30
D14
I/O
D14
I/O
D14
I/O