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Электронный компонент: HM62W4100HCLJP-12

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Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Renesas Technology
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.


HM62W4100HC Series
4M High Speed SRAM (1-Mword
4-bit)
ADE-203-1202C (Z)
Rev. 2.0
Nov. 9, 2001
Description
The HM62W4100HC is a 4-Mbit high speed static RAM organized 1-Mword
4-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing
technology. It is most appropriate for the application which requires high speed and high density memory,
such as cache and buffer memory in system. The HM62W4100HC is packaged in 400-mil 32-pin SOJ for
high density surface mounting.
Features
Single supply : 3.3 V 0.3 V
Access time : 10/12 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current : 115/100 mA (max)
TTL standby current : 40 mA (max)
CMOS standby current : 5 mA (max)
: 1 mA (max) (L-version)
Data retention current : 0.6 mA (max) (L-version)
Data retention voltage: 2 V (min) (L-version)
Center V
CC
and V
SS
type pin out
HM62W4100HC Series
Rev. 2, Nov. 2001, page 2 of 13
Ordering Information
Type No.
Access time
Device marking
Package
HM62W4100HCJP-10
HM62W4100HCJP-12
10 ns
12 ns
HM62W4100CJP10
HM62W4100CJP12
400-mil 32-pin plastic SOJ (CP-32DB)
HM62W4100HCLJP-10
HM62W4100HCLJP-12
10 ns
12 ns
HM62W4100CLJP10
HM62W4100CLJP12
Pin Arrangement
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A0
A1
A2
A3
A4
I/O1
V
CC
V
SS
I/O2
A5
A6
A7
A8
A9
A19
A18
A17
A16
A15
I/O4
V
SS
V
CC
I/O3
A14
A13
A12
A11
A10
NC
(Top view)
32-pin SOJ
Pin Description
Pin name
Function
A0 to A19
Address input
I/O1 to I/O4
Data input/output
CS Chip
select
OE Output
enable
WE Write
enable
V
CC
Power
supply
V
SS
Ground
NC No
connection
HM62W4100HC Series
Rev. 2, Nov. 2001, page 3 of 13
Block Diagram
I/O1
.
.
.
I/O4
Input
data
control
Column I/O
Column decoder
1024-row
64-column
16-block
4-bit
(4,194,304 bits)
Row
decoder
CS
CS
V
CC
V
SS
CS
A14
A13
A12
A5
A6
A7
A11
A10
A3
A1
A8 A9 A19 A17 A18 A15 A0 A2 A4 A16
(LSB)
(MSB)
(LSB)
(MSB)