Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
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Technology Corporation product best suited to the customer's application; they do not convey any
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contained therein.
HN29V25611AT-50H
256M AND type Flash Memory
More than 16,057-sector (271,299,072-bit)
ADE-203-1334A (Z)
Rev. 1.0
Apr. 5, 2002
Description
The Hitachi HN29V25611AT-50H Series is a CMOS Flash Memory with AND type multi-level memory
cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The
functions are controlled by simple external commands. To fit the I/O card applications, the unit of
programming and erase is as small as (2048 + 64) bytes. Initial available sectors of HN29V25611AT-50H are
more than 16,057 (98% of all sector address) and less than 16,384 sectors.
Features
On-board single power supply (V
CC
): V
CC
= 2.7 V to 3.6 V
Organization
AND Flash Memory: (2048 + 64) bytes
(More than 16,057 sectors)
Data register: (2048 + 64) bytes
Multi-level memory cell
2 bit/per memory cell
Automatic programming
Sector program time: 1.0 ms (typ)
System bus free
Address, data latch function
Internal automatic program verify function
Status data polling function
Automatic erase
Single sector erase time: 1.0 ms (typ)
System bus free
Internal automatic erase verify function
Status data polling function
HN29V25611AT-50H
2
Erase mode
Single sector erase ((2048 + 64) byte unit)
Fast serial read access time:
First access time: 50
s (max)
Serial access time: 50 ns (max)
Low power dissipation:
I
CC1
= 2 mA (typ) (Read)
I
CC2
= 20 mA (max) (Read)
I
SB2
= 50
A (max) (Standby)
I
CC3
/I
CC4
= 40 mA (max) (Erase/Program)
I
SB3
= 20
A (max) (Deep standby)
The following architecture is required for data reliability.
Error correction: more than 3-bit error correction per each sector read
Spare sectors: 1.8% (290 sectors) (min) within usable sectors
Ordering Information
Type No.
Available sector
Package
HN29V25611AT-50H
More than 16,057 sectors
12.0
20.00 mm
2
0.5 mm pitch
48-pin plastic TSOP I (TFP-48DA)
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