Document Outline
- HN58V65AI Series/HN58V66AI Series/HN58V65A-SR Series/HN58V66A-SR Series
- Description
- Features
- Ordering Information
- Pin Arrangement
- Pin Description
- Block Diagram
- Operation Table
- Absolute Maximum Ratings
- Recommended DC Operating Conditions
- DC Characteristics
- Capacitance
- AC Characteristics
- Timing Waveforms
- Read Timing Waveform
- Byte Write Timing Waveform(1) (WE Controlled)
- Byte Write Timing Waveform(2) (CE Controlled)
- Page Write Timing Waveform(1) (WE Controlled)
- Page Write Timing Waveform(2) (CE Controlled)
- Data Polling Timing Waveform
- Toggle Bit
- Software Data Protection Timing Waveform(1) (in protection mode)
- Software Data Protection Timing Waveform(2) (in non-protection mode)
- Functional Description
- Package Dimensions
- HN58V65API Series/HN58V66API Series (DP-28, DP-28V)
- HN58V65AFPI Series/HN58V66AFPI Series (FP-28D, FP-28DV)
- HN58V65ATI Series/HN58V66ATI Series/HN58V65AT-SR Series/HN58V66AT-SR Series (TFP-28DB, TFP-28DBV)
Rev.3.00, Feb.02.2004, page 1 of 26
HN58V65AI Series
HN58V66AI Series
HN58V65A-SR Series
HN58V66A-SR Series
64k EEPROM (8-kword
8-bit)
Ready/
Busy
function,
RES
function (HN58V66A)
Wide Temperature Range version
REJ03C0153-0300Z
(Previous ADE-203-759B(Z) Rev.2.0)
Rev. 3.00
Feb.02.2004
Description
Renesas Technology's HN58V65A series and HN58V66A series are electrically erasable and
programmable EEPROM's organized as 8192-word
8-bit. They have realized high speed, low power
consumption and high reliability by employing advanced MNOS memory technology and CMOS process
and circuitry technology. They also have a 64-byte page programming function to make their write
operations faster.
Features
Single supply: 2.7 to 5.5 V
Access time:
100 ns (max) at 2.7 V V
CC
< 4.5 V
70 ns (max) at 4.5 V V
CC
5.5 V
Power dissipation:
Active: 20 mW/MHz (typ)
Standby: 110 W (max)
On-chip latches: address, data, CE, OE, WE
Automatic byte write: 10 ms (max)
Automatic page write (64 bytes): 10 ms (max)
Ready/Busy
Data polling and Toggle bit
Data protection circuit on power on/off
HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series
Rev.3.00, Feb.02.2004, page 2 of 26
Features (cont)
Conforms to JEDEC byte-wide standard
Reliable CMOS with MNOS cell technology
10
5
erase/write cycles (in page mode)
10 years data retention
Software data protection
Write protection by RES pin (only the HN58V66A series)
Operating temperature range:
HN58V65AI/HN58V66AI Series: -40 to +85C
HN58V65A-SR/HN58V66A-SR Series: -20 to +85C
There are also lead free products.
Ordering Information
Access
time
Type No.
2.7 V
V
CC
< 4.5 V 4.5 V
V
CC
5.5 V Package
HN58V65API-10
100 ns
70 ns
600 mil 28-pin plastic DIP (DP-28)
HN58V66API-10
100 ns
70 ns
HN58V65AFPI-10
100 ns
70 ns
400 mil 28-pin plastic SOP (FP-28D)
HN58V66AFPI-10
100 ns
70 ns
HN58V65ATI-10
100 ns
70 ns
28-pin plastic TSOP(TFP-28DB)
HN58V66ATI-10
100 ns
70 ns
HN58V65AT-10SR 100 ns
70 ns
HN58V66AT-10SR 100 ns
70 ns
HN58V65API-10E
100 ns
70 ns
600 mil 28-pin plastic DIP (DP-28V)
HN58V66API-10E
100 ns
70 ns
Lead free
HN58V65AFPI-10E 100 ns
70 ns
400 mil 28-pin plastic SOP (FP-28DV)
HN58V66AFPI-10E 100 ns
70 ns
Lead free
HN58V65ATI-10E
100 ns
70 ns
28-pin plastic TSOP(TFP-28DBV)
HN58V66ATI-10E
100 ns
70 ns
Lead free
HN58V65AT-10SRE 100 ns
70 ns
HN58V66AT-10SRE 100 ns
70 ns
HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series
Rev.3.00, Feb.02.2004, page 3 of 26
Pin Arrangement
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
RDY/
Busy
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
(Top view)
HN58V65API Series
HN58V65AFPI Series
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
RES
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
RDY/
Busy
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
(Top view)
HN58V66API Series
HN58V66AFPI Series
14
13
12
11
10
9
8
7
6
5
4
3
2
1
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
I/O3
I/O4
I/O5
I/O6
I/O7
CE
A10
A3
A4
A5
A6
A7
A12
RDY/
Busy
V
CC
WE
NC
A8
A9
A11
OE
(Top view)
HN58V65ATI Series
HN58V65AT-SR Series
15
16
17
18
19
20
21
22
23
24
25
26
27
28
14
13
12
11
10
9
8
7
6
5
4
3
2
1
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
I/O3
I/O4
I/O5
I/O6
I/O7
CE
A10
A3
A4
A5
A6
A7
A12
RDY/
Busy
V
CC
WE
RES
A8
A9
A11
OE
(Top view)
HN58V66ATI Series
HN58V66AT-SR Series
15
16
17
18
19
20
21
22
23
24
25
26
27
28
HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series
Rev.3.00, Feb.02.2004, page 4 of 26
Pin Description
Pin name
Function
A0 to A12
Address input
I/O0 to I/O7
Data input/output
OE
Output
enable
CE
Chip
enable
WE
Write
enable
V
CC
Power
supply
V
SS
Ground
RDY/
Busy
Ready
busy
RES*
1
Reset
NC No
connection
Note: 1. This function is supported by only the HN58V66A series.
Block Diagram
Note: 1. This function is supported by only the HN58V66A series.
V
V
OE
CE
A5
A0
A6
A12
WE
CC
SS
I/O0
I/O7
High voltage generator
Control logic and timing
Y decoder
X decoder
Address
buffer and
latch
I/O buffer
and
input latch
Y gating
Memory array
Data latch
RES
RDY/
Busy
RES
*
1
*
1
to
to
to
HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series
Rev.3.00, Feb.02.2004, page 5 of 26
Operation Table
Operation
CE
OE
WE
RES
*
3
RDY/
Busy
I/O
Read V
IL
V
IL
V
IH
V
H
*
1
High-Z Dout
Standby V
IH
*
2
High-Z
High-Z
Write V
IL
V
IH
V
IL
V
H
High-Z to V
OL
Din
Deselect V
IL
V
IH
V
IH
V
H
High-Z High-Z
Write Inhibit
V
IH
V
IL
Data
Polling
V
IL
V
IL
V
IH
V
H
V
OL
Dout
(I/O7)
Program reset
V
IL
High-Z High-Z
Notes: 1. Refer to the recommended DC operating conditions.
2.
: Don't care
3. This function supported by only the HN58V66A series.
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage relative to V
SS
V
CC
0.6 to +7.0
V
Input voltage relative to V
SS
Vin
0.5
*
1
to
+7.0
*
3
V
Operating temperature range
*
2
HN58V65AI/HN58V66AI
Topr
40 to +85
C
HN58V65A-SR/HN58V66A-SR Topr
20 to +85
C
Storage temperature range
Tstg
55 to +125
C
Notes: 1. Vin min : 3.0 V for pulse width
50 ns.
2. Including electrical characteristics and data retention.
3. Should not exceed V
CC
+ 1 V.
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